FDD86 Search Results
FDD86 Datasheets (21)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| FDD86081-F085 | onsemi | MOSFET N-CH 100V 21A TO252-3 | Original | 418.34KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD86102 | Fairchild Semiconductor | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 8A DPAK | Original | 6 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD86102LZ | Fairchild Semiconductor | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 8A DPAK | Original | 6 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD86110 | Fairchild Semiconductor | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 12.5A DPAK-3 | Original | 6 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD86113LZ | Fairchild Semiconductor | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 4.2A DPAK-3 | Original | 6 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD86250 | Fairchild Semiconductor | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 8A DPAK | Original | 6 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD86250-F085 | ON Semiconductor | Uncategorized - Miscellaneous - NMOS DPAK 150V 22 MOHM | Original | 943.34KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD86252 | Fairchild Semiconductor | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 5A DPAK | Original | 6 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD86326 | Fairchild Semiconductor | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 80V TRENCH DPAK | Original | 6 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD86367 | ON Semiconductor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHANNEL 80V 100A TO252 | Original | 996.2KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD86367-F085 | ON Semiconductor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 80V 100A DPAK | Original | 548.01KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD86369 | ON Semiconductor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHANNEL 80V 90A TO252 | Original | 1.06MB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD86369-F085 | ON Semiconductor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 80V 90A DPAK | Original | 575.49KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD86380-F085 | ON Semiconductor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 80V 50A DPAK | Original | 716.64KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD86381-F085 | ON Semiconductor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 80V 25A DPAK | Original | 576.21KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD8647L | Fairchild Semiconductor | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 14A DPAK | Original | 6 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD86540 | Fairchild Semiconductor | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 50A DPAK-3 | Original | 6 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD86567-F085 | ON Semiconductor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 100A DPAK | Original | 600.26KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD86569-F085 | ON Semiconductor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 90A DPAK | Original | 615.33KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD86580-F085 | ON Semiconductor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 50A DPAK | Original | 567.49KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FDD86 Price and Stock
onsemi FDD86102Trans MOSFET N-CH Si 100V 8A 3-Pin(2+Tab) DPAK T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDD86102 | 6,500 | 286 |
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| FDD86102 | 4,350 | 2 |
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| FDD86102 | 2,500 | 2,500 |
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FDD86102 | Tape & Reel | 65 Weeks | 2,500 |
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FDD86102 | 18,246 |
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| FDD86102 | 2,500 | 65 Weeks | 2,500 |
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| FDD86102 | Cut Strips | 897 | 65 Weeks | 1 |
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FDD86102 | Tape & Reel | 1,949 | 100 |
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| FDD86102 | Cut Tape | 1,949 | 1 |
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FDD86102 | 236 |
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FDD86102 | 6,564 | 1 |
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FDD86102 | 2,500 |
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FDD86102 | 53 Weeks | 2,500 |
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FDD86102 | 53 Weeks | 2,500 |
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FDD86102 | 37,500 |
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FDD86102 | 2,500 | 1 |
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onsemi FDD86367Trans MOSFET N-CH 80V 100A 3-Pin(2+Tab) DPAK T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDD86367 | 3,500 | 250 |
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Buy Now | ||||||
| FDD86367 | 2,500 | 2,500 |
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| FDD86367 | 2,500 | 2,500 |
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FDD86367 | Tape & Reel | 52 Weeks | 2,500 |
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FDD86367 | 7,226 |
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FDD86367 | 2,500 | 52 Weeks | 2,500 |
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| FDD86367 | 2,500 | 52 Weeks | 2,500 |
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FDD86367 | 3,740 |
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FDD86367 | 4 | 1 |
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FDD86367 | 3 |
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FDD86367 | 919 | 1 |
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FDD86367 | 296 | 1 |
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FDD86367 | 52 Weeks | 2,500 |
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FDD86367 | 53 Weeks | 2,500 |
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FDD86367 | 53 Weeks | 2,500 |
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FDD86367 | 3,740 |
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FDD86367 | 10,000 |
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onsemi FDD86250Trans MOSFET N-CH Si 150V 8A 3-Pin(2+Tab) DPAK T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDD86250 | 2,500 | 2,500 |
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| FDD86250 | 2,500 | 2,500 |
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| FDD86250 | 2,150 | 2 |
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FDD86250 | 21,310 |
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FDD86250 | 2,500 | 78 Weeks | 2,500 |
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| FDD86250 | 2,500 | 78 Weeks | 2,500 |
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| FDD86250 | Cut Strips | 2,150 | 1 |
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FDD86250 | Bulk | 2 Weeks | 2 |
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FDD86250 |
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FDD86250 | 2,129 | 1 |
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FDD86250 | 2,500 |
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FDD86250 | 53 Weeks | 2,500 |
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FDD86250 | 53 Weeks | 2,500 |
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onsemi FDD86110Trans MOSFET N-CH Si 100V 12.5A 3-Pin(2+Tab) DPAK T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDD86110 | 2,500 | 250 |
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| FDD86110 | 947 | 127 |
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| FDD86110 | 382 | 2 |
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FDD86110 | Tape & Reel | 35 Weeks | 2,500 |
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FDD86110 | 2,275 |
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FDD86110 | Cut Tape | 218 | 5 |
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FDD86110 | 2,500 |
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FDD86110 | 947 | 1 |
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FDD86110 | 2,500 |
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FDD86110 | 78 Weeks | 2,500 |
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FDD86110 | 53 Weeks | 2,500 |
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FDD86110 | 53 Weeks | 2,500 |
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FDD86110 | 2,500 |
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onsemi FDD86326Trans MOSFET N-CH Si 80V 8A 3-Pin(2+Tab) DPAK T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDD86326 | 791 | 231 |
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FDD86326 | Tape & Reel | 66 Weeks | 2,500 |
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FDD86326 | 26,861 |
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FDD86326 |
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FDD86326 | 791 | 1 |
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FDD86326 | 53 Weeks | 2,500 |
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FDD86326 | 53 Weeks | 2,500 |
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FDD86 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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FDD86Contextual Info: FDD86113LZ N-Channel PowerTrench MOSFET 100 V, 5.5 A, 104 mΩ Features General Description Max rDS on = 104 mΩ at VGS = 10 V, ID = 4.2 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process |
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fdd86113lzfdd86 | |
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Contextual Info: FDD86252 N-Channel Shielded Gate PowerTrench MOSFET 150 V, 27 A, 52 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been |
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fdd86252 | |
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Contextual Info: FDD86102 N-Channel PowerTrench MOSFET 100 V, 36 A, 24 mΩ Features General Description ̈ Max rDS on = 24 mΩ at VGS = 10 V, ID = 8 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and |
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fdd86102 | |
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Contextual Info: FDD86326 N-Channel PowerTrench MOSFET 80 V, 37 A, 23 m: Features Max rDS on = 23 m: at VGS = 10 V, ID = 8 A General Description Max rDS(on) = 37 m: at VGS = 6 V, ID = 4.6 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has |
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fdd86326o-252 | |
FDD86540
Abstract: FDD86
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fdd86102
Abstract: OC204
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fdd86102-pa52oc204 | |
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Contextual Info: FDD86250 N-Channel Shielded Gate PowerTrench MOSFET 150 V, 50 A, 22 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been |
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fdd86250 | |
fdd86102Contextual Info: FDD86102 N-Channel PowerTrench MOSFET 100 V, 36 A, 24 m: Features General Description Max rDS on = 24 m: at VGS = 10 V, ID = 8 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and |
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fdd86102 | |
FDD86326
Abstract: FDD86
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fdd86326o-252fdd86 | |
FDD86
Abstract: FDD86110
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Contextual Info: FDD86540 N-Channel PowerTrench MOSFET 60 V, 50 A, 4.1 mΩ Features General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or |
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fdd86540 | |
FDD86110Contextual Info: FDD86110 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 50 A, 10.2 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been |
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fdd86110 | |
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Contextual Info: FDD86113LZ N-Channel Shielded Gate PowerTrench MOSFET 100 V, 5.5 A, 104 mΩ Features General Description Shielded Gate MOSFET Technology This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has |
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fdd86113lz | |
FDD86102Contextual Info: FDD86102 N-Channel PowerTrench MOSFET 100 V, 36 A, 24 mΩ Features Max rDS on = 24 mΩ at VGS = 10 V, ID = 8 A General Description Max rDS(on) = 38 mΩ at VGS = 6 V, ID = 6 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has |
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fdd86102 | |
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Contextual Info: FDD8647L N-Channel PowerTrench MOSFET 40 V, 42 A, 9 mΩ Features General Description ̈ Fast Switching This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS on and optimized BVDSS capability to offer |
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fdd8647l-pa52 | |
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Contextual Info: FDD86326 N-Channel Shielded Gate PowerTrench MOSFET 80 V, 37 A, 23 m: Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been |
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fdd86326 | |
fdd86250
Abstract: FDD86
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fdd86250fdd86 | |
FDD8647L
Abstract: FDD86
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fdd8647l-pa52fdd86 | |
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Contextual Info: FDD86113LZ N-Channel PowerTrench MOSFET 100 V, 5.5 A, 104 mΩ Features General Description ̈ Max rDS on = 104 mΩ at VGS = 10 V, ID = 4.2 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process |
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fdd86113lz | |
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Contextual Info: FDD86102 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 36 A, 24 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been |
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fdd86102 | |
fairchild 741
Abstract: FDD86252 FDD86
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fdd86252fairchild 741fdd86 | |
FDD86102
Abstract: FDD86
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fdd86102fdd86 | |
FDD86110Contextual Info: FDD86110 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 50 A, 10.2 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been |
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fdd86110 | |
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Contextual Info: FDD86252 N-Channel PowerTrench MOSFET 150 V, 27 A, 52 m: Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and |
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fdd86252 | |