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    FDD86 Search Results

    FDD86 Datasheets (21)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FDD86081-F085
    onsemi MOSFET N-CH 100V 21A TO252-3 Original PDF 418.34KB
    FDD86102
    Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 8A DPAK Original PDF 6
    FDD86102LZ
    Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 8A DPAK Original PDF 6
    FDD86110
    Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 12.5A DPAK-3 Original PDF 6
    FDD86113LZ
    Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 4.2A DPAK-3 Original PDF 6
    FDD86250
    Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 8A DPAK Original PDF 6
    FDD86250-F085
    ON Semiconductor Uncategorized - Miscellaneous - NMOS DPAK 150V 22 MOHM Original PDF 943.34KB
    FDD86252
    Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 5A DPAK Original PDF 6
    FDD86326
    Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 80V TRENCH DPAK Original PDF 6
    FDD86367
    ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHANNEL 80V 100A TO252 Original PDF 996.2KB
    FDD86367-F085
    ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 80V 100A DPAK Original PDF 548.01KB
    FDD86369
    ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHANNEL 80V 90A TO252 Original PDF 1.06MB
    FDD86369-F085
    ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 80V 90A DPAK Original PDF 575.49KB
    FDD86380-F085
    ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 80V 50A DPAK Original PDF 716.64KB
    FDD86381-F085
    ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 80V 25A DPAK Original PDF 576.21KB
    FDD8647L
    Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 14A DPAK Original PDF 6
    FDD86540
    Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 50A DPAK-3 Original PDF 6
    FDD86567-F085
    ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 100A DPAK Original PDF 600.26KB
    FDD86569-F085
    ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 90A DPAK Original PDF 615.33KB
    FDD86580-F085
    ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 50A DPAK Original PDF 567.49KB
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    FDD86 Price and Stock

    onsemi

    onsemi FDD86102

    Trans MOSFET N-CH Si 100V 8A 3-Pin(2+Tab) DPAK T/R
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    onsemi FDD86367

    Trans MOSFET N-CH 80V 100A 3-Pin(2+Tab) DPAK T/R
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    onsemi FDD86250

    Trans MOSFET N-CH Si 150V 8A 3-Pin(2+Tab) DPAK T/R
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    Verical () FDD86250 2,500 2,500
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    onsemi FDD86110

    Trans MOSFET N-CH Si 100V 12.5A 3-Pin(2+Tab) DPAK T/R
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    Verical () FDD86110 2,500 250
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    onsemi FDD86326

    Trans MOSFET N-CH Si 80V 8A 3-Pin(2+Tab) DPAK T/R
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    Verical FDD86326 791 231
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    FDD86 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FDD86

    Contextual Info: FDD86113LZ N-Channel PowerTrench MOSFET 100 V, 5.5 A, 104 mΩ Features General Description „ Max rDS on = 104 mΩ at VGS = 10 V, ID = 4.2 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process


    Original
    fdd86113lzfdd86 PDF

    Contextual Info: FDD86252 N-Channel Shielded Gate PowerTrench MOSFET 150 V, 27 A, 52 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been


    Original
    fdd86252 PDF

    Contextual Info: FDD86102 N-Channel PowerTrench MOSFET 100 V, 36 A, 24 mΩ Features General Description ̈ Max rDS on = 24 mΩ at VGS = 10 V, ID = 8 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and


    Original
    fdd86102 PDF

    Contextual Info: FDD86326 N-Channel PowerTrench MOSFET 80 V, 37 A, 23 m: Features „ Max rDS on = 23 m: at VGS = 10 V, ID = 8 A General Description „ Max rDS(on) = 37 m: at VGS = 6 V, ID = 4.6 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has


    Original
    fdd86326o-252 PDF

    FDD86540

    Abstract: FDD86
    Contextual Info: FDD86540 N-Channel PowerTrench MOSFET 60 V, 50 A, 4.1 mΩ Features General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or


    Original
    fdd86540fdd86 PDF

    fdd86102

    Abstract: OC204
    Contextual Info: FDD86102 N-Channel PowerTrench MOSFET 100 V, 36 A, 24 mΩ Features „ Max rDS on = 24 mΩ at VGS = 10 V, ID = 8 A General Description „ Max rDS(on) = 38 mΩ at VGS = 6 V, ID = 6 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has


    Original
    fdd86102-pa52oc204 PDF

    Contextual Info: FDD86250 N-Channel Shielded Gate PowerTrench MOSFET 150 V, 50 A, 22 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been


    Original
    fdd86250 PDF

    fdd86102

    Contextual Info: FDD86102 N-Channel PowerTrench MOSFET 100 V, 36 A, 24 m: Features General Description „ Max rDS on = 24 m: at VGS = 10 V, ID = 8 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and


    Original
    fdd86102 PDF

    FDD86326

    Abstract: FDD86
    Contextual Info: FDD86326 N-Channel PowerTrench MOSFET 80 V, 37 A, 23 m: Features „ Max rDS on = 23 m: at VGS = 10 V, ID = 8 A General Description „ Max rDS(on) = 37 m: at VGS = 6 V, ID = 4.6 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has


    Original
    fdd86326o-252fdd86 PDF

    FDD86

    Abstract: FDD86110
    Contextual Info: FDD86110 N-Channel PowerTrench MOSFET 100 V, 50 A, 10.2 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and


    Original
    fdd86110fdd86 PDF

    Contextual Info: FDD86540 N-Channel PowerTrench MOSFET 60 V, 50 A, 4.1 mΩ Features General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or


    Original
    fdd86540 PDF

    FDD86110

    Contextual Info: FDD86110 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 50 A, 10.2 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been


    Original
    fdd86110 PDF

    Contextual Info: FDD86113LZ N-Channel Shielded Gate PowerTrench MOSFET 100 V, 5.5 A, 104 mΩ Features General Description „ Shielded Gate MOSFET Technology This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has


    Original
    fdd86113lz PDF

    FDD86102

    Contextual Info: FDD86102 N-Channel PowerTrench MOSFET 100 V, 36 A, 24 mΩ Features „ Max rDS on = 24 mΩ at VGS = 10 V, ID = 8 A General Description „ Max rDS(on) = 38 mΩ at VGS = 6 V, ID = 6 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has


    Original
    fdd86102 PDF

    Contextual Info: FDD8647L N-Channel PowerTrench MOSFET 40 V, 42 A, 9 mΩ Features General Description ̈ Fast Switching This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS on and optimized BVDSS capability to offer


    Original
    fdd8647l-pa52 PDF

    Contextual Info: FDD86326 N-Channel Shielded Gate PowerTrench MOSFET 80 V, 37 A, 23 m: Features General Description „ Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been


    Original
    fdd86326 PDF

    fdd86250

    Abstract: FDD86
    Contextual Info: FDD86250 N-Channel PowerTrench MOSFET 150 V, 50 A, 22 mΩ Features General Description „ 100% UIL tested This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and


    Original
    fdd86250fdd86 PDF

    FDD8647L

    Abstract: FDD86
    Contextual Info: FDD8647L N-Channel PowerTrench MOSFET 40 V, 42 A, 9 mΩ Features General Description „ Fast Switching This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS on and optimized BVDSS capability to offer


    Original
    fdd8647l-pa52fdd86 PDF

    Contextual Info: FDD86113LZ N-Channel PowerTrench MOSFET 100 V, 5.5 A, 104 mΩ Features General Description ̈ Max rDS on = 104 mΩ at VGS = 10 V, ID = 4.2 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process


    Original
    fdd86113lz PDF

    Contextual Info: FDD86102 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 36 A, 24 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been


    Original
    fdd86102 PDF

    fairchild 741

    Abstract: FDD86252 FDD86
    Contextual Info: FDD86252 N-Channel PowerTrench MOSFET 150 V, 27 A, 52 m: Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and


    Original
    fdd86252fairchild 741fdd86 PDF

    FDD86102

    Abstract: FDD86
    Contextual Info: FDD86102 N-Channel PowerTrench MOSFET 100 V, 36 A, 24 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS on , switching performance and ruggedness.


    Original
    fdd86102fdd86 PDF

    FDD86110

    Contextual Info: FDD86110 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 50 A, 10.2 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been


    Original
    fdd86110 PDF

    Contextual Info: FDD86252 N-Channel PowerTrench MOSFET 150 V, 27 A, 52 m: Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and


    Original
    fdd86252 PDF