FDD86252 Search Results
FDD86252 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| FDD86252 | Fairchild Semiconductor | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 5A DPAK | Original | 6 |
FDD86252 Price and Stock
onsemi FDD86252Trans MOSFET N-CH Si 150V 5A 3-Pin(2+Tab) DPAK T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDD86252 | 1,500 | 500 |
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| FDD86252 | 10 | 9 |
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FDD86252 | Tape & Reel | 35 Weeks | 2,500 |
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FDD86252 | Cut Strips | 10 | 78 Weeks | 1 |
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FDD86252 | Cut Tape | 82,415 | 5 |
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| FDD86252 | Tape & Reel | 82,415 | 100 |
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| FDD86252 | Tape & Reel | 2,500 |
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FDD86252 | Reel | 6 Weeks | 2,500 |
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FDD86252 | 1,650 |
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FDD86252 | 1,145 | 1 |
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FDD86252 | 78 Weeks | 2,500 |
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FDD86252 | 53 Weeks | 2,500 |
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FDD86252 | 53 Weeks | 2,500 |
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FDD86252 | 1,985 |
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FDD86252 | 1,650 |
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Fairchild Semiconductor Corporation FDD86252Trans MOSFET N-CH Si 150V 5A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 150V 5A DPAK |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDD86252 | 30,235 |
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FDD86252 Datasheets Context Search
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Contextual Info: FDD86252 N-Channel Shielded Gate PowerTrench MOSFET 150 V, 27 A, 52 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been |
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fairchild 741
Abstract: FDD86252 FDD86
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Contextual Info: FDD86252 N-Channel PowerTrench MOSFET 150 V, 27 A, 52 m: Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and |
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fdd86252 | |
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Contextual Info: FDD86252 N-Channel PowerTrench MOSFET 150 V, 27 A, 52 m: Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and |
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fdd86252 |