FDD86113LZ Search Results
FDD86113LZ Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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FDD86113LZ |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 4.2A DPAK-3 | Original | 6 |
FDD86113LZ Price and Stock
onsemi FDD86113LZMOSFET N-CH 100V 4.2A/5.5A DPAK |
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FDD86113LZ | Digi-Reel | 16,961 | 1 |
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FDD86113LZ | Reel | 15 Weeks | 2,500 |
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FDD86113LZ | 5,349 |
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FDD86113LZ | 10,000 | 2,500 |
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FDD86113LZ | Reel | 2,500 |
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FDD86113LZ | Reel | 15 Weeks | 2,500 |
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FDD86113LZ |
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FDD86113LZ | 468 | 1 |
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FDD86113LZ | 2,500 | 2,500 |
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FDD86113LZ | 2,500 |
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FDD86113LZ | 16 Weeks | 2,500 |
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FDD86113LZ | 17 Weeks | 2,500 |
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UMW FDD86113LZMOSFET N-CH 100V 4.2A/5.5A DPAK |
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FDD86113LZ | Cut Tape | 2,350 | 1 |
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onsemi FDD86113LZ (POWERTRENCH)Mosfet, N-Ch, 5.5A, 100V, To-252; Transistor Polarity:N Channel; Continuous Drain Current Id:5.5A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.087Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Power Rohs Compliant: Yes |Onsemi FDD86113LZ |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDD86113LZ (POWERTRENCH) | Cut Tape | 3,919 | 1 |
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Fairchild Semiconductor Corporation FDD86113LZ |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDD86113LZ | 1,298 | 6 |
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FDD86113LZ | 1,038 |
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FDD86113LZ | 2,500 |
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FDD86113LZ Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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FDD86Contextual Info: FDD86113LZ N-Channel PowerTrench MOSFET 100 V, 5.5 A, 104 mΩ Features General Description Max rDS on = 104 mΩ at VGS = 10 V, ID = 4.2 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process |
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FDD86113LZ FDD86113LZ FDD86 | |
Contextual Info: FDD86113LZ N-Channel Shielded Gate PowerTrench MOSFET 100 V, 5.5 A, 104 mΩ Features General Description Shielded Gate MOSFET Technology This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has |
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FDD86113LZ | |
Contextual Info: FDD86113LZ N-Channel PowerTrench MOSFET 100 V, 5.5 A, 104 mΩ Features General Description ̈ Max rDS on = 104 mΩ at VGS = 10 V, ID = 4.2 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process |
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FDD86113LZ |