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    FDD86102 Search Results

    FDD86102 Datasheets (2)

    Fairchild Semiconductor
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FDD86102
    Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 8A DPAK Original PDF 6
    FDD86102LZ
    Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 8A DPAK Original PDF 6
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    FDD86102 Price and Stock

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    onsemi FDD86102LZ

    Trans MOSFET N-CH Si 100V 8A 3-Pin(2+Tab) DPAK T/R
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    onsemi FDD86102

    Trans MOSFET N-CH Si 100V 8A 3-Pin(2+Tab) DPAK T/R
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    FDD86102 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: FDD86102 N-Channel PowerTrench MOSFET 100 V, 36 A, 24 mΩ Features General Description ̈ Max rDS on = 24 mΩ at VGS = 10 V, ID = 8 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and


    Original
    fdd86102 PDF

    fdd86102

    Abstract: OC204
    Contextual Info: FDD86102 N-Channel PowerTrench MOSFET 100 V, 36 A, 24 mΩ Features „ Max rDS on = 24 mΩ at VGS = 10 V, ID = 8 A General Description „ Max rDS(on) = 38 mΩ at VGS = 6 V, ID = 6 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has


    Original
    fdd86102-pa52oc204 PDF

    fdd86102

    Contextual Info: FDD86102 N-Channel PowerTrench MOSFET 100 V, 36 A, 24 m: Features General Description „ Max rDS on = 24 m: at VGS = 10 V, ID = 8 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and


    Original
    fdd86102 PDF

    FDD86102

    Contextual Info: FDD86102 N-Channel PowerTrench MOSFET 100 V, 36 A, 24 mΩ Features „ Max rDS on = 24 mΩ at VGS = 10 V, ID = 8 A General Description „ Max rDS(on) = 38 mΩ at VGS = 6 V, ID = 6 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has


    Original
    fdd86102 PDF

    Contextual Info: FDD86102 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 36 A, 24 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been


    Original
    fdd86102 PDF

    FDD86102

    Abstract: FDD86
    Contextual Info: FDD86102 N-Channel PowerTrench MOSFET 100 V, 36 A, 24 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS on , switching performance and ruggedness.


    Original
    fdd86102fdd86 PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original
    p462-ndp463-ndlng295lfcp2ulng395mftp5u+11us2011schematic diagram atx power supply 500wpioneer pal 012a1000w inverter pure sine wave schematic diagram600va numeric ups circuit diagramswinbond bios 25064tle 9180 infineonsmsc mec 1300 nutbe schematic diagram inverter 2000wdk55circuit diagram of luminous 600va ups PDF

    FDD86102LZ

    Abstract: fdd86102
    Contextual Info: N-Channel PowerTrench MOSFET 100 V, 35 A, 22.5 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD


    Original
    o-252fdd86102lzfdd86102 PDF

    202118A

    Abstract: GRM32ER71H106K schottky barrier type rectifier 30v 3a FDD86102 AAT1409a diode 431M aat1409 675KHz CS7 thermal switch aat140
    Contextual Info: DATA SHEET AAT1409 Eight-Channel LED Backlight Driver with Integrated Boost and High Frequency Direct PWM Dimming General Description Features The AAT1409 is a highly integrated, high efficiency LED backlight solution for notebook computers, monitors and portable TVs. The device operates from DC inputs, cigarette lighter adapters, or multi-cell Li-ion batteries over


    Original
    aat1409360ma02118a202118a+8grm32er71h106kschottky barrier type rectifier 30v 3afdd86102aat1409adiode 431m675khzcs7 thermal switchaat140 PDF

    Contextual Info: PRODUCT DATASHEET AAT1409 SwitchRegTM 8 Channel LED Backlight Driver with Integrated Boost and High Frequency Direct PWM Dimming General Description Features The AAT1409 is a highly integrated, high efficiency LED backlight solution for notebook computers, monitors and


    Original
    aat1409360ma PDF

    AAT1409

    Abstract: U2-19 CS7 thermal switch
    Contextual Info: PRODUCT DATASHEET AAT1409 SwitchRegTM 8 Channel LED Backlight Driver with Integrated Boost and High Frequency Direct PWM Dimming General Description Features The AAT1409 is a highly integrated, high efficiency LED backlight solution for notebook computers, monitors and


    Original
    aat1409360mau2-19cs7 thermal switch PDF

    FDD86102LZ

    Abstract: FDD86102
    Contextual Info: N-Channel PowerTrench MOSFET 100 V, 35 A, 22.5 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD


    Original
    fdd86102lzfdd86102 PDF

    Contextual Info: N-Channel PowerTrench MOSFET 100 V, 35 A, 22.5 mΩ Features General Description ̈ Max rDS on = 22.5 mΩ at VGS = 10 V, ID = 8 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and


    Original
    PDF