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    FDD86250 Search Results

    FDD86250 Datasheets (2)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FDD86250
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 8A DPAK Original PDF 6
    FDD86250-F085
    		ON Semiconductor Uncategorized - Miscellaneous - NMOS DPAK 150V 22 MOHM Original PDF 943.34KB
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    FDD86250 Price and Stock

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    onsemi FDD86250

    MOSFET N-CH 150V 8A/50A DPAK
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    DigiKey () FDD86250 Tape & Reel 8,568 2,500
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    FDD86250 Digi-Reel 8,568 1
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    Future Electronics () FDD86250 Reel 12 Weeks 2,500
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    onsemi FDD86250-F085

    MOSFET N-CH 150V 50A TO252
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    DigiKey () FDD86250-F085 Digi-Reel 2,754 1
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    FDD86250-F085 Tape & Reel 2,500 2,500
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    FDD86250-F085 7,500 21 Weeks 2,500
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    Fairchild Semiconductor Corporation FDD86250

    POWER FIELD-EFFECT TRANSISTOR, 8A I(D), 150V, 0.022OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252
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    Quest Components FDD86250 1,788
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    Chip 1 Exchange FDD86250 7,254
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    FDD86250 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: FDD86250 N-Channel Shielded Gate PowerTrench MOSFET 150 V, 50 A, 22 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been


    Original     		FDD86250 PDF

    fdd86250

    Abstract: FDD86
    Contextual Info: FDD86250 N-Channel PowerTrench MOSFET 150 V, 50 A, 22 mΩ Features General Description „ 100% UIL tested This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and


    Original     		FDD86250 FDD86250 FDD86 PDF

    Contextual Info: FDD86250 N-Channel PowerTrench MOSFET 150 V, 50 A, 22 mΩ Features General Description ̈ 100% UIL tested This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and


    Original     		FDD86250 PDF