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    FDMC7680 Search Results

    FDMC7680 Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FDMC7680
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 8-MLP Original PDF 7
    SF Impression Pixel

    FDMC7680 Price and Stock

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    Rochester Electronics LLC FDMC7680

    MOSFET N-CH 30V 14.8A 8MLP
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    DigiKey FDMC7680 Bulk 11,422 372
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    onsemi FDMC7680

    MOSFET N-CH 30V 14.8A 8MLP
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    DigiKey () FDMC7680 Digi-Reel 4,700 1
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    FDMC7680 Cut Tape 4,700 1
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    FDMC7680 Reel 3,000 3,000
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    Avnet Americas () FDMC7680 Reel 2,381
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    FDMC7680 Reel 23 Weeks 3,000
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    Mouser Electronics FDMC7680 1,724
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    Verical () FDMC7680 6,000 387
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    FDMC7680 3,000 387
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    FDMC7680 3,000 387
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    FDMC7680 2,422 387
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    Newark FDMC7680 Reel 3,000
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    Future Electronics FDMC7680 Reel 23 Weeks 3,000
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    Onlinecomponents.com FDMC7680
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    Rochester Electronics FDMC7680 9,000 1
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    TME FDMC7680 1
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    Richardson RFPD FDMC7680 3,000
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    Avnet Asia FDMC7680 23 Weeks 3,000
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    Avnet Silica FDMC7680 24 Weeks 3,000
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    EBV Elektronik FDMC7680 25 Weeks 3,000
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    Flip Electronics FDMC7680 15,023
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    Fairchild Semiconductor Corporation FDMC7680

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    Bristol Electronics FDMC7680 2,598 6
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    Quest Components () FDMC7680 2,078
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    FDMC7680 2,078
    • 1 $1.43
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    Rochester Electronics FDMC7680 11,422 1
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    Component Electronics, Inc FDMC7680 50
    • 1 $0.77
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    FDMC7680 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FDMC7680

    Abstract: MO-229 148 FSC
    Contextual Info: FDMC7680 N-Channel Power Trench MOSFET 30 V, 14.8 A, 7.2 m: Features General Description „ Max rDS on = 7.2 m: at VGS = 10 V, ID = 14.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This


    Original     		FDMC7680 FDMC7680 MO-229 148 FSC PDF

    Contextual Info: FDMC7680 N-Channel Power Trench MOSFET 30 V, 14.8 A, 7.2 mΩ Features General Description „ Max rDS on = 7.2 mΩ at VGS = 10 V, ID = 14.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This


    Original     		FDMC7680 FDMC7680 PDF

    FDMC7680

    Abstract: MO-229
    Contextual Info: FDMC7680 N-Channel Power Trench MOSFET 30 V, 14.8 A, 7.2 m: Features General Description „ Max rDS on = 7.2 m: at VGS = 10 V, ID = 14.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This


    Original     		FDMC7680 FDMC7680 MO-229 PDF

    Contextual Info: FDMC7680 N-Channel Power Trench MOSFET 30 V, 14.8 A, 7.2 mΩ Features General Description „ Max rDS on = 7.2 mΩ at VGS = 10 V, ID = 14.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This


    Original     		FDMC7680 PDF

    Contextual Info: FDMC7680 N-Channel Power Trench MOSFET 30 V, 14.8 A, 7.2 mΩ Features General Description „ Max rDS on = 7.2 mΩ at VGS = 10 V, ID = 14.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This


    Original     		FDMC7680 PDF

    FDMC7680

    Abstract: MO-229
    Contextual Info: FDMC7680 N-Channel Power Trench MOSFET 30 V, 14.8 A, 7.2 m: Features General Description „ Max rDS on = 7.2 m: at VGS = 10 V, ID = 14.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This


    Original     		FDMC7680 FDMC7680 MO-229 PDF

    Contextual Info: FDMC7680 N-Channel Power Trench MOSFET 30 V, 14.8 A, 7.2 mΩ Features General Description ̈ Max rDS on = 7.2 mΩ at VGS = 10 V, ID = 14.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This


    Original     		FDMC7680 PDF