Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    FDC8884 Search Results

    FDC8884 Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FDC8884
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 6.5A 6-SSOT Original PDF 7
    SF Impression Pixel

    FDC8884 Price and Stock

    Select Manufacturer

    onsemi FDC8884

    MOSFET N-CH 30V 6.5/8A SUPERSOT6
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FDC8884 Reel
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Avnet Americas FDC8884 Reel 5,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.21
    		Buy Now
    Verical () FDC8884 33,361 1,552
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.22
    		Buy Now
    FDC8884 31,236 1,552
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.22
    		Buy Now
    Bristol Electronics FDC8884 1,336
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Rochester Electronics FDC8884 64,597 1
    • 1 -
    • 10 -
    • 100 $0.23
    • 1000 $0.19
    • 10000 $0.17
    		Buy Now
    Flip Electronics FDC8884 55,290
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    FLIP ELECTRONICS FDC8884

    MOSFET N-CH 30V 6.5/8A SUPERSOT6
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FDC8884 Reel 4,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.16
    		Buy Now

    FDC8884 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FDC8884

    Contextual Info: FDC8884 N-Channel Power Trench MOSFET 30 V, 6.5 A, 23 mΩ Features General Description „ Max rDS on = 23 mΩ at VGS = 10 V, ID = 6.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching performance.


    Original     		FDC8884 FDC8884 PDF

    FDC8884

    Abstract: marking I58
    Contextual Info: FDC8884 N-Channel Power Trench MOSFET 30 V, 6.5 A, 23 mΩ Features General Description „ Max rDS on = 23 mΩ at VGS = 10 V, ID = 6.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching performance.


    Original     		FDC8884 FDC8884 marking I58 PDF

    Contextual Info: FDC8884 N-Channel Power Trench MOSFET 30 V, 6.5 A, 23 mΩ Features General Description ̈ Max rDS on = 23 mΩ at VGS = 10 V, ID = 6.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching performance.


    Original     		FDC8884 PDF