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    FDC8884 Search Results

    FDC8884 Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FDC8884
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 6.5A 6-SSOT Original PDF 7
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    		VBsemi Electronics Co Ltd N-Channel 30 V MOSFET with 0.030 ohm typical RDS(on) at VGS = 10 V, 6 A continuous drain current, and 4.2 nC gate charge, housed in a TSOP-6 package, suitable for high-speed switching and DC/DC converters. Original PDF
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    FDC8884 Price and Stock

    onsemi

    onsemi FDC8884

    MOSFET N-CH 30V 6.5/8A SUPERSOT6
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    FDC8884 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FDC8884

    Contextual Info: FDC8884 N-Channel Power Trench MOSFET 30 V, 6.5 A, 23 mΩ Features General Description „ Max rDS on = 23 mΩ at VGS = 10 V, ID = 6.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching performance.


    Original     		FDC8884 FDC8884 PDF

    FDC8884

    Abstract: marking I58
    Contextual Info: FDC8884 N-Channel Power Trench MOSFET 30 V, 6.5 A, 23 mΩ Features General Description „ Max rDS on = 23 mΩ at VGS = 10 V, ID = 6.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching performance.


    Original     		FDC8884 FDC8884 marking I58 PDF

    Contextual Info: FDC8884 N-Channel Power Trench MOSFET 30 V, 6.5 A, 23 mΩ Features General Description ̈ Max rDS on = 23 mΩ at VGS = 10 V, ID = 6.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching performance.


    Original     		FDC8884 PDF