FDC8878 Search Results
FDC8878 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| FDC8878 |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 8A 6-SSOT | Original | 7 |
FDC8878 Price and Stock
onsemi FDC8878MOSFET N-CH 30V 8A/8A SUPERSOT6 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDC8878 | Reel | 3,000 |
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FDC8878 | Reel | 2,778 |
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FDC8878 | 15,527 |
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FDC8878 | 66,000 | 3,000 |
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FDC8878 | Cut Tape | 1,680 | 1 |
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FDC8878 | Reel | 25 Weeks | 3,000 |
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FDC8878 |
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FDC8878 | 14,791 | 4 |
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FDC8878 | 11,832 |
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FDC8878 | 63,058 | 1 |
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FDC8878 | 434 |
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FDC8878 | 3,000 |
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FDC8878 | 26 Weeks | 3,000 |
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FDC8878 | Cut Tape | 2,736 | 0 Weeks, 1 Days | 1 |
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FDC8878 | 132,500 |
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FDC8878 | 27 Weeks | 3,000 |
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FDC8878 | 45,401 |
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FDC8878 | 3,000 | 3,000 |
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Fairchild Semiconductor Corporation FDC8878MOSFET N-CH 30V 8A 6-SSOT |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDC8878 | 27,000 |
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onsemi FDC8878NL |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDC8878NL | 25,840 |
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FDC8878 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
FDC8878Contextual Info: FDC8878 N-Channel PowerTrench MOSFET 30 V, 8.0 A, 16 mΩ Features General Description Max rDS on = 16 mΩ at VGS = 10 V, ID = 8.0 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance. |
Original |
FDC8878 FDC8878 | |
FDC8878Contextual Info: FDC8878 N-Channel PowerTrench MOSFET 30 V, 8.0 A, 16 mΩ Features General Description Max rDS on = 16 mΩ at VGS = 10 V, ID = 8.0 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance. |
Original |
FDC8878 FDC8878 | |
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Contextual Info: FDC8878 N-Channel PowerTrench MOSFET 30 V, 8.0 A, 16 mΩ Features General Description ̈ Max rDS on = 16 mΩ at VGS = 10 V, ID = 8.0 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance. |
Original |
FDC8878 |