FDMC7680 Search Results
FDMC7680 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| FDMC7680 |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 8-MLP | Original | 7 |
FDMC7680 Price and Stock
onsemi FDMC7680MOSFET N-CH 30V 14.8A 8MLP |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDMC7680 | Cut Tape | 3,500 | 1 |
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FDMC7680 | Reel | 2,381 |
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FDMC7680 | 1,624 |
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FDMC7680 | 6,000 | 787 |
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FDMC7680 | Reel | 3,000 |
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FDMC7680 | Reel | 20 Weeks | 3,000 |
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FDMC7680 |
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FDMC7680 | 9,000 | 1 |
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FDMC7680 | 1 |
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FDMC7680 | 3,000 |
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FDMC7680 | 20 Weeks | 3,000 |
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FDMC7680 | 21 Weeks | 3,000 |
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FDMC7680 | 22 Weeks | 3,000 |
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FDMC7680 | 15,023 |
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Get Quote | |||||||
Rochester Electronics LLC FDMC7680MOSFET N-CH 30V 14.8A 8MLP |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDMC7680 | Bulk | 566 |
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Buy Now | ||||||
Fairchild Semiconductor Corporation FDMC7680 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDMC7680 | 2,598 | 6 |
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FDMC7680 | 2,078 |
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FDMC7680 | 11,422 | 1 |
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FDMC7680 | 3,000 |
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FDMC7680 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
FDMC7680
Abstract: MO-229 148 FSC
|
Original |
FDMC7680 FDMC7680 MO-229 148 FSC | |
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Contextual Info: FDMC7680 N-Channel Power Trench MOSFET 30 V, 14.8 A, 7.2 mΩ Features General Description Max rDS on = 7.2 mΩ at VGS = 10 V, ID = 14.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This |
Original |
FDMC7680 FDMC7680 | |
FDMC7680
Abstract: MO-229
|
Original |
FDMC7680 FDMC7680 MO-229 | |
|
Contextual Info: FDMC7680 N-Channel Power Trench MOSFET 30 V, 14.8 A, 7.2 mΩ Features General Description Max rDS on = 7.2 mΩ at VGS = 10 V, ID = 14.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This |
Original |
FDMC7680 | |
|
Contextual Info: FDMC7680 N-Channel Power Trench MOSFET 30 V, 14.8 A, 7.2 mΩ Features General Description Max rDS on = 7.2 mΩ at VGS = 10 V, ID = 14.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This |
Original |
FDMC7680 | |
FDMC7680
Abstract: MO-229
|
Original |
FDMC7680 FDMC7680 MO-229 | |
|
Contextual Info: FDMC7680 N-Channel Power Trench MOSFET 30 V, 14.8 A, 7.2 mΩ Features General Description ̈ Max rDS on = 7.2 mΩ at VGS = 10 V, ID = 14.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This |
Original |
FDMC7680 |