MARKING CODE INFINEON TO252 Search Results

50p03l

Abstract: DIN 6880 P-TO252 P-TO252-5 marking D50 SPD50P03L P-TO252-5-3
Contextual Info: SPD50P03L OptiMOS -P Small-Signal-Transistor Product Summary Features V DS • P-Channel -30 R DS on ,max • Enhancement mode 7 ID V mΩ -50 A • Logic level • 175°C operating temperature • Avalanche rated P-TO252-5-3 P-DSO-8 • dv /dt rated • High current rating

Q67040-S4381

Contextual Info: IDD23E60 Preliminary data Fast Switching EmCon
Diode Product Summary Feature 600 V IF 23 A VF 1.45 V Tjmax 175 °C VRRM
600 V EmCon technology
Fast recovery
Soft switching
Low reverse recovery charge P-TO252-3-1.
Low forward voltage
175°C operating temperature

D15E60

Abstract: IDD15E60 J-STD-020A P-TO252 Q67040-S4380 01642
Contextual Info: IDD15E60 Preliminary data Fast Switching EmCon
Diode Product Summary Feature 600 V IF 15 A VF 1.45 V Tjmax 175 °C VRRM
600 V EmCon technology
Fast recovery
Soft switching
Low reverse recovery charge P-TO252-3-1.
Low forward voltage
175°C operating temperature

D06E60

Abstract: idd06e60 6A MARKING 01642 400v 3a low vf diode CTC30
Contextual Info: IDD06E60 Preliminary data Fast Switching EmCon
Diode Product Summary Feature 600 V IF 6 A VF 1.45 V Tjmax 175 °C VRRM
600 V EmCon technology
Fast recovery
Soft switching
Low reverse recovery charge P-TO252-3-1.
Low forward voltage
175°C operating temperature

Contextual Info: SPU06N80C2 SPD06N80C2 Target data sheet Cool MOS Power Transistor COOLMOS Power Semiconductors Feature Product Summary • New revolutionary high voltage technology · Worldwide best R DS on in TO251 and TO252 · Ultra low gate charge · Periodic avalanche rated

fast recovery diode 400v 5A

Abstract: IDD09E60
Contextual Info: IDD09E60 Preliminary data Fast Switching EmCon
Diode Product Summary Feature 600 V IF 9 A VF 1.45 V Tjmax 175 °C VRRM
600 V EmCon technology
Fast recovery
Soft switching
Low reverse recovery charge P-TO252-3-1.
Low forward voltage
175°C operating temperature

400v 3a low vf diode

Abstract: DIODE SMD 350A diode fast recovery 400V 3A fast recovery diode 400v 5A
Contextual Info: IDD03E60 Preliminary data Fast Switching EmCon
Diode Product Summary Feature 600 V IF 3 A VF 1.45 V Tjmax 175 °C VRRM
600 V EmCon technology
Fast recovery
Soft switching
Low reverse recovery charge P-TO252-3-1.
Low forward voltage
175°C operating temperature

Contextual Info: IDD09E60 Fast Switching Emitter Controlled Diode Product Summary VRRM Feature 600 V IF 9 A VF 1.5 V T jmax 175 °C • 600V Emitter Controlled technology • Fast recovery • Soft switching • Low reverse recovery charge PG-TO252-3 • Low forward voltage

3bs02

Abstract: 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J
Contextual Info: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Selection Guide www.infineon.com/powermanagement Introduction I n f i n e o n ’ s P o w e r S e mi c o n d u c t o r p h i l o s o p h y is rather

2n0680

Abstract: SPD14N06S2-80 BSPD14N06S2-80
Contextual Info: SPD14N06S2-80 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode R DS on 80 mΩ ID 17 A • 175°C operating temperature • Avalanche rated P- TO252 -3-11 • dv/dt rated Type SPD14N06S2-80 Package Ordering Code

02N60

Abstract: SPD02N60S5 SPU02N60S5
Contextual Info: SPU02N60S5 SPD02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated VDS 600 V RDS on 3 Ω ID 1.8 A P-TO252 P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances

2N0640

Abstract: BSPD25N06S2-40 SPD25N06S2-40 VGS-75
Contextual Info: SPD25N06S2-40 Preliminary data OptiMOS
=Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 55 V RDS on 40 m
ID 25 A P-TO252-3-1 Type Package Ordering Code Marking SPD25N06S2-40

Contextual Info: SPU01N60C3 SPD01N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 6 Ω ID 0.8 A P-TO252 • Periodic avalanche rated P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances

11n10

Abstract: smd diode marking 78A TRANSISTOR SMD MARKING CODE SPD11N10 SPU11N10
Contextual Info: SPD11N10 SPU11N10 Preliminary data SIPMOS Power-Transistor Feature Product Summary • N-Channel VDS 100 V • Enhancement mode RDS on 170 mΩ • 175°C operating temperature ID 10.5 A • Avalanche rated P- TO251 -3-1 P- TO252 -3-11 • dv/dt rated

SPD35N10

Abstract: 35n10 P-TO252 Q67042-S4125
Contextual Info: SPD35N10 Preliminary data SIPMOS Power-Transistor Product Summary Feature 100 VDS
N-Channel
Enhancement mode
175°C operating temperature V R DS on 44 m
ID 35 A
Avalanche rated P-TO252
dv/dt rated Type SPD35N10 Package P-TO252 Ordering Code

2n0680

Abstract: BSPD14N06S2-80
Contextual Info: SPD14N06S2-80 OptiMOS =Power-Transistor Product Summary Feature
N-Channel
Enhancement mode
175°C operating temperature VDS 55 V R DS on 80 m
ID 17 A P- TO252 -3-11
Avalanche rated
dv/dt rated Type SPD14N06S2-80 Package Ordering Code P- TO252 -3-11 Q67060-S7423

2n0680

Abstract: g39 SMD BSPD14N06S2-80 SPD14N06S2-80
Contextual Info: SPD14N06S2-80 OptiMOS
Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 55 V RDS on 80 m ID 17 A P- TO252 -3-11 Type Package Ordering Code SPD14N06S2-80 P- TO252 -3-11 Q67060-S7423

02n60s5

Abstract: Transistor 02N60S5 02N60 PG-TO252-3-11 SPD02N60S5 TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 1a SPU02N60S5 TRANSISTOR SMD MARKING CODE 42
Contextual Info: SPU02N60S5 SPD02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO252 • Periodic avalanche rated • Extreme dv/dt rated PG-TO251 2 • Ultra low effective capacitances

SPD02N60S5

Abstract: SPU02N60S5
Contextual Info: SPU02N60S5 SPD02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO252. • Periodic avalanche rated • Extreme dv/dt rated PG-TO251. 2 • Ultra low effective capacitances

2N0640

Abstract: MAX408
Contextual Info: SPD25N06S2-40 OptiMOS =Power-Transistor Product Summary Feature
N-Channel
Enhancement mode
175°C operating temperature VDS 55 V R DS on 40 m
ID 29 A P- TO252 -3-11
Avalanche rated
dv/dt rated Type SPD25N06S2-40 Package Ordering Code P- TO252 -3-11 Q67060-S7427

PN06L13

Abstract: ANPS071E BSPD50N06S2L-13 SPD50N06S2L-13
Contextual Info: SPD50N06S2L-13 OptiMOSâ Power-Transistor Product Summary Feature VDS • N-Channel 55 R DS on • Enhancement mode ID • Logic Level V 12.7 mΩ 50 A P- TO252 -3-11 • Avalanche rated • dv/dt rated Type SPD50N06S2L-13 Package Ordering Code P- TO252 -3-11 Q67060- S7421

09N03L

Abstract: 09N03 IPD09N03L P-TO252 Q67042-S4110
Contextual Info: IPD09N03L Preliminary data OptiMOS
=Buck converter series Product Summary Feature  N-Channel  Logic Level  Low on-resistance RDS on  Excellent Gate Charge x RDS(on) product (FOM) VDS 30 V RDS(on) 8.9 m
ID 30 A P-TO252
Superior thermal resistance 175°C operating temperature

2n06l35

Abstract: transistor 2N06L35 D26A 2N06L3 BSPD26N06S2L-35 INFINEON PART MARKING to252 SPD26N06S2L-35
Contextual Info: SPD26N06S2L-35 OptiMOS
Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated VDS 55 V RDS on 35 m ID 30 A P- TO252 -3-11 Type Package Ordering Code Marking SPD26N06S2L-35

14N03L

Abstract: IPD14N03L P-TO252 14N03
Contextual Info: IPD14N03L Preliminary data OptiMOS
=Buck converter series Product Summary Feature  N-Channel  Logic Level  Low on-resistance RDS on  Excellent Gate Charge x RDS(on) product (FOM) 30 VDS RDS(on) ID V m
13.5 30 A P-TO252
Superior thermal resistance 175°C operating temperature