09N03L Search Results
09N03L Price and Stock
Infineon Technologies AG ISC009N03LF2SATMA1- Tape and Reel (Alt: ISC009N03LF2SATMA1) |
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ISC009N03LF2SATMA1 | Tape & Reel | 52 Weeks | 5,000 |
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ISC009N03LF2SATMA1 | Tape & Reel | 4,987 | 100 |
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| ISC009N03LF2SATMA1 | Cut Tape | 4,987 | 1 |
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ISC009N03LF2SATMA1 | 53 Weeks | 5,000 |
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Infineon Technologies AG IPP09N03LAPower Field-Effect Transistor, 50A I(D), 25V, 0.0155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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IPP09N03LA | 300 | 1 |
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IPP09N03LA | 7,275 |
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Infineon Technologies AG IPB009N03LGATMA1Power Field-Effect Transistor, 180A I(D), 30V, 0.0013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA |
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IPB009N03LGATMA1 | 13 | 1 |
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IPB009N03LGATMA1 | 12,623 |
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Cyg Wayon Circuit Protection Co Ltd WMB009N03LG4Transistor: N-MOSFET; unipolar; 30V; 200A; PDFN5060-8 |
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WMB009N03LG4 | 3 | 1 |
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Infineon Technologies AG IPD09N03LAGOPTIMOS 2 POWER-TRANSISTOR Power Field-Effect Transistor, 50A I(D), 25V, 0.0148ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA |
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IPD09N03LAG | 1,850 |
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IPD09N03LAG | 4,325 |
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09N03L Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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09n03lb
Abstract: 09N03 09N03L TRANSISTOR SMD MARKING CODE 42 IPD09N03LB PG-TO252-3-11 IPD09N03LBG
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ipd09n03lbipu09n03lbips09n03lbipf09n03lb+7 | |
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Contextual Info: Preliminary data 09N03LA 09N03LA,09N03LA OptiMOSâ 2 Power-Transistor Product Summary Feature Ideal for high-frequency dc/dc converters N-Channel Logic Level Excellent Gate Charge x RDS on product (FOM) Very low on-resistance RDS(on) P- TO262 -3-1 |
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ipi09n03laipp09n03laipb09n03laq67042-s4153+2 | |
09n03la
Abstract: IPB09N03LA 09N03 IPI09N03LA IPP09N03LA Q67042-S4151
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ipb09n03laipi09n03laipp09n03lap-to263-3-2+5 | |
09N03
Abstract: S4264 09n03lb IPD09N03LB JESD22 PG-TO252-3-11 P-TO252-3-11 Q67042-S4264
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ipd09n03lbpg-to252-3-11q67042-s426409n03lb+4 | |
09n03la
Abstract: IPB09N09LA IPP09N03LA 09n03 Q67042-S4152 Q67042-S4153 09n03l
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ipi09n03laipp09n03laipb09n09la09n03la+4 | |
09N03
Abstract: DS9256 RT9256 SS0520 09N03LT
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rt9256ds9256-0709n03ds9256+2 | |
mosfet 09n03la
Abstract: mosfet 06N03LA 2N3904 M5 09N03LA C3312 13n03la 06n03la D1N4148 m7 MOSFET SC2677BEVB-1
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sc2677b300khztssop-24mosfet 09n03la+9 | |
09N03L
Abstract: 09N03 IPD09N03L P-TO252 Q67042-S4110
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ipd09n03lp-to252q67042-s411009n03l+1 | |
09n03la
Abstract: 09N03LA datasheet 09N03LA equivalent IPS09N03LA 09N03 IPD09N03LA 09N03L smd diode code sd IPF09N03LA IPU09N03LA
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ipd09n03laips09n03laipf09n03laipu09n03la+8 | |
09N03LA
Abstract: IPS09N03LA 09N03 diode marking 321 09N03LA datasheet IPD09N03LA 09N03LA equivalent IPF09N03LA IPU09N03LA P-TO251-3-1
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ipd09n03laips09n03laipf09n03laipu09n03la+8 | |
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Contextual Info: RT9256 Preliminary Actively Alternative Mode Two-Phase / Dual Switching PWM Controller General Description Features The RT9256 is an analogous current mode design and is specifically promoted for high power density consideration platform with MLCC capacitor attached, such as high-end |
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rt9256ds9256-05 | |
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Contextual Info: RT9256 Actively Alternative Mode Two-Phase / Dual Switching PWM Controller General Description Features The RT9256 is an analogous current mode design and is specifically promoted for high power density consideration platform with MLCC capacitor attached, such as high-end |
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rt9256ds9256-08 | |
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Contextual Info: RT9256 Preliminary Actively Alternative Mode Two-Phase / Dual Switching PWM Controller General Description Features The RT9256 is an analogous current mode design and is specifically promoted for high power density consideration platform with MLCC capacitor attached, such as high-end |
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rt9256j-std-020ds9256-03 | |
09n03la
Abstract: 09N03 IPB09N03LA 09N03LA equivalent Q67042-S4151 TRANSISTOR SMD MARKING CODE 42 IPI09N03LA IPP09N03LA smd code D50 09n03l
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ipb09n03laipi09n03laipp09n03lap-to263-3-2+9 | |
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09N03LA
Abstract: IPS09N03LA IPD09N03LA 09N03 09N03LA datasheet 09N03LA equivalent IPU09N03LA equivalent IPF09N03LA IPU09N03LA P-TO252-3-11
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ipd09n03laips09n03laipf09n03laipu09n03la+7 | |
09N03
Abstract: 09n03lb 09n03l IPD09N03LB PG-TO252-3-11
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ipd09n03lbipf09n03lbips09n03lbipu09n03lb+5 | |
09N03
Abstract: 09n03la IPF09N03LA P-TO252-3-23
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ipf09n03lap-to252-3-23q67042-s419909n03la+1 | |
IPD09N03LA
Abstract: 09n03la
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ipd09n03lap-to252-3-11q67042-s415409n03la | |
IPS09N03LA
Abstract: IPD09N03LA
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ipd09n03laips09n03laipf09n03laipu09n03la+2 | |
IPI09N03LAContextual Info: 09N03LA, 09N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max 9.2 mΩ ID 50 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM) |
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ipi09n03laipp09n03lapg-to262-3-1pg-to220-3-1+1 | |
09N03
Abstract: 09n03la PG-TO263-3-2 PG-TO-263-3-2 09N03LA equivalent IPB09N03LA JESD22 09N03L
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ipb09n03lapg-to263-3-209n03la09n03+4 | |
09n03l
Abstract: 09N03 Q67042-S4110 S4110 ANPS071E IPD09N03L
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ipd09n03lq67042-s411009n03l09n03+2 | |
06N03LT
Abstract: 09n03
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rt9256ds9256-0906n03lt09n03 | |
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Contextual Info: 09N03LB G 09N03LB G 09N03LB G 09N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max (SMD version) 9.1 mΩ |
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ipd09n03lbipf09n03lbips09n03lbipu09n03lb+2 | |