MARKING CODE 21E Search Results

transistor bc 577

Abstract: transistor bc 103
Contextual Info: SIEMENS BC 847S NPN Silicon AF Transistor Array >For AF input stages and driver applications >High current gain >Low collector-emitter saturation voltage >Two galvanic internal isolated Transistors in one package F] FI FI liJ lU Type Marking Ordering Code

Transistor BFR 181w

Abstract: GMA13 MARKING CODE 21E SOT323 TRANSISTOR BO 345
Contextual Info: SIEMENS BFR 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • fr = 8GHz F=1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

transistor 2222a

Abstract: transistor 2222a CURRENT GAIN EHN0005 2222a sot23 2222A transistor
Contextual Info: SIEMENS SMBT 2222A NPN Silicon Switching Transistor • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 2907A PNP Type Marking Ordering Code Pin Configuration SMBT 2222A s1 B Q68000-A6481 1=B

Contextual Info: SIEMENS SMBT 2222A NPN Silicon Switching Transistor • High DC current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 2907A PNP Type Marking Ordering Code Pin Configuration SMBT 2222A s1B Q68000-A6481 1=B

Contextual Info: SIEMENS BFG 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fy = 8GHz F = 1 .3 d B at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

Contextual Info: SIEMENS SMBT 5087 PNP Silicon Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz Type Marking Ordering Code Pin Configuration SMBT 5087 s2Q Q68000-A8319

ac 0624 transistor 17-33

Abstract: uc 1604 0166 415 04 1 060 transistor cq 529
Contextual Info: BFP 193 NPN Silicon RF Transistor • For low-noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers. • f j = 8 GHz. F = 1.2 dB at 800 MHz. ESD : Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code

Contextual Info: SIEMENS PNP Silicon Switching Transistor PZT 3906 • High DC current gain 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: PZT 3904 NPN Type Marking Ordering Code (tape and reel) Pin Conf igural ion 1 2 4 3 Package1*

sot marking code ZS

Abstract: transistor bf 290
Contextual Info: SIEMENS BF 770A NPN S ilicon RF Transistor • For IF amplifiers in TV-sat tuners and for VCR modulators it m 1= B h Q62702-F1124 O LSs CO BF 770A ro ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin C onfiguration

VPS05604

Contextual Info: SMBT 3904PN NPN Silicon Switching Transistor Array Preliminary data 4 • High current gain 5 • Low collector-emitter saturation voltage 6 • Two galvanic internal isolated NPN/PNP Transistors in one package 2 1 3 VPS05604 PIN Configuration Type Marking Ordering Code Package NPN-Transistor 1 = E 2 = B 6 = C

CD601CR126

Abstract: CD601CR127 CD601CR128 CD601CR129 CD601CR130 CD601CR131 seriel Delay Modules
Contextual Info: - -• *’ ■ '~Â-' -aa i'iÆi.,EÎi: DESIGNATRONICS/AUTOflATIC 21E D 277350b OGQOia? b T- 47-13: if 6 | ^ y | |l | ^ t 3 | i | I '-14 PIN. 10 TAP TTL input and outputs Precise and stable delays Reliable hybrid construction No external com po n en ts required

dap 001

Abstract: H045 CD521A-102 CD521A-101 CD521A-103 CD521A-104 CD521A-105 CD521A-106 CD521A-107 CD521A-108
Contextual Info: D E S I G N A T R O N I C S / A U T OMATIC 21E D 277350b QQ0017T 7 TÎTÎMP î çjl jftiàil D61 aVï M O d u le , 1 ap i n , 5 T A P TTL input and outputs Leading & Trailing Edge Accuracies Precise and stable delays Reliable hybrid construction No external components required

CD501A-101

Abstract: CD501A-102 CD501A-103 CD501A-104 CD501A-105 CD501A-106 CD501A-107 20TTL CD501A-110
Contextual Info: DESIGNATRONICS/AUTOMATIC 21E D 5 7 7 3 S â b 00001 70 S TTL input and outputs Precise and stable delays Reliable hybrid construction No external components required Fan out 10TTL loads/tap, 20TTL loads/package Operating temperature 0° to 70°C Storage temperature -55° to +125°

PIN14

Abstract: dap 001
Contextual Info: DE SI GN A T R O N I O S / AUTOMATIC 21E D 577350b 00001Ô 4 0 i IIS ?;•'’i t s D îg it^ tîê J^ lM ô d u l^ ^ ï^ ^ / i * . - •'■' ■ '•-y' £ y! * £&•fefe?’ •■ * •—:. = *'•* •.>; "-> * _- IP - £¿~T' $g% £sét& $?3 ■.dhxm»áiáigatM^!tm‘ -

transistor marking 6c1

Contextual Info: BC846PN/UPN_BC847PN NPN/PNP Silicon AF Transistor Arrays • For AF input stage and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP transistor in one package BC846PN BC846UPN

transistor marking 6c1

Contextual Info: BC856S/U_BC857S PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see

Contextual Info: SMBT3904.PN NPN / PNP Silicon Switching Transistor Array • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN / PNP transistor in one package SMBT3904PN SMBT3904UPN C1 B2 E2 6 5 4 TR2 TR1 1 2 3 E1 B1

MARKING 3FS

Abstract: MARKING CODE 21E SOT23 marking 3ks
Contextual Info: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN 1 2006-09-29

transistor marking RHs

Abstract: BCR108S BFS483 bcr1 marking RHs
Contextual Info: BFS483 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 4 5 6 collector currents from 2 mA to 30 mA • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 2 3 • Two galvanic internal isolated Transistor in one package • For orientation in reel see

BFS481

Abstract: infineon marking RFs BCR108S
Contextual Info: BFS481 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 4 5 6 collector currents from 0.5 mA to 12 mA • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 2 3 • Two galvanic internal isolated Transistors in one package • For orientation in reel see

MXO-55GA-2C

Abstract: MX055GA-2C mx055ga CTS Knights mil-std-883 random MXO-55 CX-065 cx065 MXO-55GA-2C-16 DIODE GOC 44
Contextual Info: C T S E L E C T R O N IC S /KN I GH TS 17ams 21E D CTS. CO R PO R A TIO N KIMIGHTS D IV IS IO N O OQGQOSO 4 • SPECIALISTS IN FREQUENCY MANAGEMENT 400 Reimann Ave., Sandwich, IL 60548 • 815/786-8411 • TW X 910-642-0860 C able CTS FAX 815-786-9743 Engineering Data For Hybrid Oscillators

marking code VV transistors

Contextual Info: WILLAS FM120-M+ 2SB1132THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features TRANSISTOR PNP design, excellent power dissipation offers • Batch process

STK and STR integrated circuits

Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Contextual Info: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram

TRANSISTOR SMD MARKING CODE 2x

Abstract: TRANSISTOR SMD MARKING CODE 1P TRANSISTOR SMD MARKING CODE ag SMD TRANSISTOR MARKING 2e TRANSISTOR SMD MARKING CODE 2x I TRANSISTOR SMD MARKING CODE 1v TRANSISTOR SMD MARKING CODE 2X 6 TRANSISTOR SMD MARKING CODE 2e marking 2X smd code marking 1G
Contextual Info: BFR460L3 NPN Silicon RF Transistor Preliminary data • For low voltage / low current applications 3 • Ideal for VCO modules and low noise amplifiers • Low noise figure: 1.1 dB at 1.8 GHz 1 • World's smallest SMD leadless package 2 • Excellent ESD performance