MARKING AFL Search Results

Schneider electric XB5

Abstract: SCHNEIDER zb5 AZ-105 AZ105 ZB5 AW823743 AW84M5 XB5 AW84B5 XB5AL945 PILOT LIGHT HARMONY SCHNEIDER
Contextual Info: References Control and signalling units Ø 22 Assembly of other products using: combined sub-assemblies: see page 1/170 accessories: see pages 1/179 and 1/182 Double-headed pushbuttons, spring return with marking Harmony XB5, plastic Double-headed pushbuttons 1

Contextual Info: SIEMENS BCR 505 NPN Silicon Digital Transistor »Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2kü, R2=10kQ Marking Ordering Code Pin Configuration BCR 505 XWs Q62702-C2354 1= B Package LU It C\J Type 3=C

A129 marking code

Abstract: 5F marking
Contextual Info: ERB38 o .8A : Outline Drawings r4 * - Y FAST RECOVERY DIODE • t t f t : F e a tu re s :5F : Marking Su p e r high speed sw itching • 9 - > * y W E fie1 il' Ì 7- 3-K : à Color code : White Low V F in turn on • AfltM tt H igh reliability Abridged type name

SANYO sh2a027-1

Abstract: 3116-SIP12S ic 4040 MPP36S SIP14H 3047a 3151-QIP100E 3149-DIP48S 3037A-DIP20H 3029A-DIP28S
Contextual Info: PACKAGE DIMENSIO Package dimensions for all o f Sanyo's semicondustor devices are provided below. Dimensions are all given in millimeters and those which are not specified as min or max are typical values. Unit: mm 10.9 Package marking is not provided. Refer to the transistor ca ta lo g for electrical connection and lead

IMBT4403

Abstract: IMBT4401 5n80 IMBT2222 BC817-16 BC817-25 BC817-40 BC846A IMBT2222A IMBT3903
Contextual Info: TAIWAN LITON ELECTRONIC kiAirr Afl3sb'ìs ooo4oa3 ?ifi « t l i t D ^ CÌE SURFACE MOUNT TRANSISTORS 'Z'l-D0 N P N T R A N S IS T O R S - SOT-23 PACKAGE 310 m W DISSIPATION RATING See Note 4) OPERATING/STORAGE TEMPERATURE -55°C to +150°C CHARACTERISTICS @ TA 25°C

Contextual Info: N AflER PHILIPS/DISCRETE b'lE D • bbS3131 DOEblUS 4Q4 « A P X BA223 SILICON A.M. BAND SWITCHING DIODE The BA223 is a switching diode in whiskerless glass encapsulation. It is intended for band switching in a.m. radio receivers. QUICK REFERENCE DATA VR max.

RTC1005

Contextual Info: N AflER PH IL IP S/ D IS C R ET E DbE D • MAINTENANCE TYPE for new design use PTB23003X _ GGS3G31 QGISDflS T ■ A PKB12005lT 3 1 ^ 7 C.W. AND PULSED MICROWAVE POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w.

SMD CODE 77p

Abstract: S14 SMD BAS70-07 BAS70-70 PINNING-SOT143 A2 DIODE SMD CODE MARKING A2 marking diode SOT143 smd marking s14
Contextual Info: • t.bS3T31 □□2M3D7 bfifi H A P X Philips Semiconductors Product specification N AflER P H I L I P S / D I S C R E T E b7E B Schottky barrier diodes FEATURES BAS70-07 QUICK REFERENCE DATA • Low leakage current SYMBOL PARAMETER CONDITIONS MAX. UNIT • Low turn-on and high breakdown

Contextual Info: bb53=J31 OOEMbQl IQS • APX N AflER P H ILIP S /D IS C R E T E BCX19 BCX20 b?E D SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors, in a SOT-23 plastic envelope, intended for application in thick and thin-film circuits. These transistors are intended fo r general purposes as well as saturated switching and driver applications

Contextual Info: • bbSB^Bl Q025flfl4 b33 H A P X N AflER PHILIPS/D ISCR ETE PM BT6428 PM BT6429 b7E D _ _ SILICON EPITAXIAL TRANSISTORS N-P-N transistors in a microminiature SMD) plastic envelope intended for application in thick and

1h17

Abstract: ovenaire ovenaire 49 TCXO L T-50 ovenaire 10 mhz
Contextual Info: OV E N A I R E - A U D I O - T7 »EiböaSSST ODOOflOB fi I -, DIMENSIONS IN MILLIMETERS itic i« o < < ticx n cH^am m Z7/7ZT OVÈNAIRE . AUDIO.« C AflPÉN TEB C H A I? lO T T E $ V llL C . V IR G IN IA U S A + .76 36. SO MODEL OSC 39-1 FR EQ . S ER .N O .

TRANSISTOR ba 751

Abstract: BSS87 marking JC MOS MARKING KA Transistor B 1566 S2 MARKING TRANSISTOR Marking BA SOT89
Contextual Info: • L.bSB'm OQESbn T3T H A P X N AflER P H I L I P S / D I S C R E T E b?E BSS87 D - N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel vertical D-MOS transistor in a SOT89 envelope. Designed prim arily as a line current interrupter in telephone sets, it can also be applied in other

BAL99

Abstract: Philips MBB BAW62 sot23 BAW62 PH philips diode PH 15 ir 222 BAW62 D0242 LF MARKING CODE
Contextual Info: • Philips Sem iconductors . ^ bbSBTBl aaaMESM 513 H A P X _ _ — N AflER PHILIPS/DISCRETE Silicon planar epitaxial high-speed diode DESCRIPTION Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching

Contextual Info: N AflER PHILIPS/DISCRETE b^E D m bb53^31 DDSb4b5 53b IAPX BY328 32 kHz PARALLEL EFFICIENCY DIODE Double-diffused glass passivated rectifier diode in an hermetically sealed axial-leaded glass envelope, intended for use as an efficiency diode in transistorized horizontal deflection circuits of television

m38510/10404

Abstract: 55115 marking code YS SMD E1713 5962-E1713-2
Contextual Info: REVISIONS LTR DESCRIPTION DATE yr -m o -oa APPROVED REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET PM 1C N/A STANDARDIZED MILITARY DRAWING PREPARED BY J AflpA*,(k . SCKED B Y A _ DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 rj MICROCIRCUIT, LINEAR, DUAL, DIFFERENTIAL LINE

AFL Marking

Abstract: MARKING CODE AFL MSOP8 Part marking SUFFIX AFL200-00E AFL002-10E
Contextual Info: AFL Sensors AFL-Series Sensors—Low Power, Low Voltage Digital Switches Features: • • • • • • • Low voltage operation to 0.9 V Low current consumption Digital switch output Precise detection of low magnetic fields Ultra-small packages MSOP8 and TDFN6

MARKING CODE AFL

Abstract: MSOP8 Part marking TDFN-6
Contextual Info: AFL Sensors AFL-Series Sensors—Low Power, Low Voltage Digital Switches Features: • • • • • • • Low voltage operation to 0.9 V Low current consumption Digital switch output Precise detection of low magnetic fields Ultra-small packages MSOP8 and TDFN6

Contextual Info: AFL Sensors AFL-Series Sensors—Low Power, Low Voltage Digital Switches Features: • • • • • • • Low voltage operation to 0.9 V Low current consumption Digital switch output Precise detection of low magnetic fields Ultra-small packages MSOP8 and TDFN6

Contextual Info: bbS3T31 QQ23b34 4tl N AflER PHILIPS/DISCRETE b?E D Philips Semiconductors Data sheet status Product specification T APX BF998 date of issue April 1991 Silicon n-channel dual gate MOS-FET FEATURES QUICK REFERENCE DATA • Short channel transistor with high

Contextual Info: AFL Series 11409 Valley View Road Eden Prairie, MN 55344 Phone: 952 829-9217 Fax: (952) 996-1600 Data Sheet NVE AFLxxx-xx Low Power Low Voltage Digital Switch • • • • • ● • Low Voltage Operation Down to 0.9V Low Current Consumption Digital Switch Output

Contextual Info: r r i m LTC1426 m TECHNOLOGY Micropower Dual 6-Bit PWM DAC F€OTUR€S D€SCRIPTIOn • Wide Supply Range: 2.7V < V^c ^ 5.5V ■ Wide Reference Voltage Range: OV to 5.5V The LTC 1426 is a dual micropower 6-bit PWM DAC featuring versatile PWM outputs and aflexible pushbutton

Contextual Info: AFL Sensors AFL-Series Sensors—Low Power, Low Voltage Digital Switches Features: • • • • • • • Low voltage operation to 0.9 V Low current consumption Digital switch output Precise detection of low magnetic fields Ultra-small packages MSOP8 and TDFN6

MARKING CODE AFL

Abstract: MSOP8 Part marking
Contextual Info: AFL Sensors AFL-Series Sensors—Low Power, Low Voltage Digital Switches Features: • • • • • • • Low voltage operation to 0.9 V Low current consumption Digital switch output Precise detection of low magnetic fields Ultra-small packages MSOP8 and TDFN6

Contextual Info: MICROCOMPUTER LSI MEMORY 1C GATE ARRAY LOGIC LSI The information In th is docum ent 1« »ubject to change w ith o u t notice. Document No. Cl0983EJ3V0tF00 3rd edition (Previous No. iEi-1203) Date Published December 1995 P Printed in Japan NEC Corporation 1986