D0242 Search Results

Contextual Info: bbSB'Ol D0242S4 250 « A P X N AMER PHILIPS/DISCRETE BAS32L b7E D J V HIGH-SPEED SILICON DIODE FOR SURFACE MOUNTING The BAS32L is a planar epitaxial high-speed diode designed for fast logic applications. This SM diode is a leadless diode in a hermetically sealed SOD-80C glass envelope with tin-plated

USER S MANUAL oki 32 lcd tv

Abstract: USER MANUAL oki 42 lcd tv USER S MANUAL oki 22 lcd tv MSM64155A MSM64P155 QFP100-P-1420-BK USER MANUAL oki 22 lcd tv
Contextual Info: O K I Semiconductor MSM64155A/64155AL Built-in M elody C ircu it and L C D D river 4-Bit M icrocontroller GEN ERAL DESCRIPTION The MSM64155A 1.5 V /64155A L (3.0 V) is a 4-bit microcontroller that incorporates an n X -4/ 20 CPU core. The MSM64155A fam ily offers a built-in 256-nibble data m em ory, 4-Kbyte program

MSM64153A

Abstract: MSM64P155 SEG23
Contextual Info: O K I Semiconductor MSM6 4 153A/6 4 153AL Built-in Melody Circuit and LCD Driver 4-Bit Microcontroller GENERAL DESCRIPTION The MSM64153A 1.5 V /64153A L (3.0 V) is a 4-bit microcontroller that incorporates an nX-4/20 CPU core. The MSM64153A family offers a built-in 160-nibble data memory, 3-Kbyte program

tba 2003

Abstract: D242l TMP68000 mfp36 64Prescaler HC33 TLCS-68000 tmp6890 toshiba 6210 MFP21
Contextual Info: ^0^724^ 54E D TOSHIBA UC/UP DQ E 4 E 4 0 T O S H IB A 1. 377 I T0S3 TMP68901 l > 5 Z -3 S - INTRODUCTION T he TM P68901 m u lti-function p erip h e ra l (MFP) is a m em b er of th e TLCS-68000 F am ily of perip h e ra ls. T he M FP d irectly interfaces to th e TM P68000 processor v ia an

Contextual Info: I i .•_ I PRELIMINARY International I R Rectifier P D 9 .1 3 8 5 IRF5305 HEXFET Power MOSFET • • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Vdss = -55 V

3007A-DIP18

Abstract: DIP18 LB11988 FR-415
Contextual Info: Ordering number :ENN6211 Monolithic Digital IC LB 11988 ¡SAHmj Refrigerator Fan Motor Driver Functions Package Dimensions • Three-phase full-wave current linear drive • Built-in current limiter circuit • Built-in saturation prevention circuits in both the upper

D0241

Abstract: D0243 D0242 P24812 DP0242
Contextual Info: NEMA Terminal Blocks Heavy Duty DESCRIPTION/APPLICATION This compact, heavy duty black line accepts single or combination wires up to #4 AWG, solid or stranded. The compact design allows at least 138 circuits per six foot length to be mounted. The pitch of this 600 volt

d0311

Abstract: Buchanan B104 D0241 buchanan terminal blocks Buchanan 1546143-1 1546235-1 2b104 242 4-1437390-0 BU 110 2B112
Contextual Info: BUCHANAN Terminal Blocks Note: All part numbers are RoHS Compliant. Table of Contents—NEMA ETB Overview Selector Chart ………………………………………………………………240-243 Catalog Numbering Code ……………………………………………………………………244

Contextual Info: FLASH MEMORY KM29N32000T/R 4M x 8 Bit NAND Flash Memory GENERAL DESCRIPTION FEATURES • Single 5.0 - volt Supply • Organization - Memory Cell Array - Data Register The KM29N32000T/R is a 4M 4,194,304 x8 bit NAND Flash memory with a spare 128K(131,072)x8 bit. Its NAND

DIODE SMD W04 52

Abstract: transistor SMD W06 smd code W06 smd transistor w08 w03 SMD SMD transistor M05 SMD Transistor W03 transistor SMD w04 transistor SMD t06 DIODE SMD V05
Contextual Info: SHARC Digital Signal Processor ADSP-21160M/ADSP-21160N SUMMARY FEATURES High performance 32-bit DSP—applications in audio, medical, military, graphics, imaging, and communication Super Harvard architecture—4 independent buses for dual data fetch, instruction fetch, and nonintrusive, zero-overhead I/O

Contextual Info: MEMORY i i i S lllllììl S ^ 1 M x 16 BIT HYPER PAGE MODE DYNAMIC RAM MB8118165B-50/-60 CMOS 1,048,576 x 16 Bit Hyper Page Mode Dynamic RAM • DESCRIPTION The Fujitsu MB8118165B is a fully decoded CMOS Dynamic RAM DRAM th a t contains 16,777,216 memory

Buchanan 1546143-1

Abstract: B112-BU 1546235-1 5-1437381-8 Buchanan Fuse block 1437397-9 BU 110 D0241 d0311 buchanan 200 series UL486e torque
Contextual Info: Note: All part numbers are RoHS Compliant. BUCHANAN Terminal Blocks Table of Contents—NEMA ETB Overview Selector Chart ………………………………………………………………240-243 Catalog Numbering Code ……………………………………………………………………244

Contextual Info: LT-3/94 electronics EVAR EXPONENTIAL VARACTOR SERIES for 1M220 - 1M250 1T220 - XT250 D022D - D0250 FREQUENCY-VOLTAGE LINEAR TUNING inc. - X " — 1— v. D024I 's \ N K323Í — In axial leaded glass DO-7, in the surface mount MSI Case 1M alumina substrate with epoxy encapsulation or in the surface mount MSI-123

Contextual Info: GEC PLESSEY DS3598-3.4 MA9000 Series SILICON-ON-SAPPHIRE RADIATION HARD GATE ARRAYS The logic building block for the GPS double level metal C M O S /S O S ga te arrays is a fo u r tra n s is to r ‘c e ll-u n it’ equivalent in size to a 2 input NAND gate. Back to back cellunits as illustrated, organised in rows, form the core of the

Contextual Info: PICI 6C6X/7X/9XX M ic ro c h ip In-Circuit Serial Programming for PIC16C6X/7X/9XX OTP Microcontrollers This document includes the programming specifications for the following devices: PIC16C61 PIC16C62 PIC16C62A PIC16C63 PIC16C64 PIC16C64A PIC16C65 PIC16C65A

MSM64172

Abstract: VQH207 P13CO
Contextual Info: O K I Semiconductor MSM64172_ Built-in Serial Port and LCD Driver 4-Bit Microcontroller GENERAL DESCRIPTION The MSM64172 is a low-power 4-bit m icrocontroller that incorporates O K I's C P U core nX-4/20. The MSM64172 has a m inim um instruction execution tim e of 5 is (@ 600 kH z and 3.0 V . The

L4142

Contextual Info: PRELIMINARY KM29V16000AT/R 2Mx8Bit FLASH MEMORY NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 2M +64K bit x 8bit - Data Register : (256 + 8)bit x 8bit • Automatic Program and Erase - Page Program : (256 + 8)Byte

km29n16000at

Abstract: c60h - dc
Contextual Info: PRELIMINARY KM29N16000AT/R FLASH MEMORY 2M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization The KM29N16000AT/R is a 2M 2,097,152 x8 bit NAND Flash memory with a spare 64K(65,536)x8 bit. Its NAND cell provides the most cost-effective solution for the mass

NYLON WHITE ROD 66 UL94V-2

Abstract: thermal d242 D0241 Buchanan 921 BU 2735 AS D0222 D0221 2103 datasheet buchanan 200 series MEXICO FUSE
Contextual Info: Note: All part numbers are RoHS Compliant. Terminal Blocks Table of Contents—NEMA ETB Overview Selector Chart ………………………………………………………………238-241 Catalog Numbering Code ……………………………………………………………………242

x -12sl

Contextual Info: • bSMRf l es DD24S74 D3 1 ■ M IT I MITSUBISHILSls M5M51 T08AP,FP,VP,RV-70SL,-85SL,-10SL,-12SL 1048576-BIT 131072-WQRD BY 8-BIT CM0S STATIC RAM DESCRIPTION The M 5M 51T08AP,FP,VP,RV are a 1048576-bit CMOS static RAM organized as 131072 word by 8 - bit which are

Contextual Info: bSMTÖSS D02MSbQ 547 • MITI MITSUBISHILSls M5M51008AP,FP,VP,RV-70L,-85L,-1 OL, -12L,-70LL,-85LL,-1 OLL,-12LL 1048576-BIT 131072-WQRD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M 5 M 5 1 0 0 8 A P , FP, VP, RV are a 1 0 4 8 5 7 6 -b it CMOS PIN CONFIGURATION (TOP VIEW)

Contextual Info: SHARC Digital Signal Processor ADSP-21160M/ADSP-21160N SUMMARY FEATURES High performance 32-bit DSP—applications in audio, medical, military, graphics, imaging, and communication Super Harvard architecture—4 independent buses for dual data fetch, instruction fetch, and nonintrusive, zero-overhead I/O

Contextual Info: R a t i n g s and c h a r a c t e r i s t i c s o f Fuji 2 Ivi B 1. I 7 5 I G 13 T MB! O J Module (TENTATI Vii) O u t l i n e Drawing Uni t : ram * Isolation V o l t a ge : AC 2500 V 1 minute 23 2 - ^ 40 > ^ „ 23 "I „ 5 .4 T ill m i . i m ' : 1P .5

Contextual Info: BUCHANAN Catalog 1308389 Terminal Blocks Revised 3-01 200 SE R IES, H E A V Y DU TY, 600 V, 0.50" PITCH Jr. CHARACTERISTICS STRAP SCREW T yp e o f B lock — - D irect M ount F lat Base Nylon, Unpainted Polypropylene MMaf — . .