MARKING A17 Search Results

a1704

Abstract: TO126 package TO126 KTA1704 TO-126
Contextual Info: SEMICONDUCTOR KTA1704 MARKING SPECIFICATION TO-126 PACKAGE 1. Marking method Laser Marking or Ink Marking 2. Marking K A1704 Y 816 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name A1704 KTA1704 3 hFE Grade Y O,Y 4 Lot No. 816 98.06.23 Revision No :

5800c

Abstract: bios programmer block diagram of crusoe processor TM5500-800 chip morphing TM5800 feature sdr sdram pcb layout TM5800 TM5800-733 TM5800-800
Contextual Info: TM5500/TM5800 Version 1.0 Data Book Crusoe Processors Described in this Document Processor SKU Memory Interface Package Marking L2 Cache Max Core Core Frequency Voltage Tj Max TDP DDR SDR TM5800-933 CoolRun80 DDR/SDR 5800C093310 512 KBytes 933 MHz 0.90-1.35 V

block diagram of crusoe processor

Abstract: bios programmer SDR100 TM5800 TM58EL-800 crusoe "sdr sdram" design guideline TM58E SDR100 sdram dimm TM55EL-667
Contextual Info: Crusoe SE TM55E/TM58E Version 2.1 Data Book Crusoe SE Embedded Processors Described in this Document Processor SKU Memory Package Marking L2 Cache Max Core Core Frequency Voltage Temp Range TDP DDR SDR TM58EX-933 100°C DDR/SDR 58EXAE093321 512 KBytes 933 MHz

Contextual Info: SmartMediaTM K9S3208V0A-SSB0 Document Title 4M x 8 bit SmartMediaTM Card Revision History Revision No. History Draft Date Remark 0.0 Initial Issue April 10th 1999 Final 0.1 1 Revised real-time map-out algorithm refer to technical notes) 2) Changed voltage-density model marking method on SmartMedia

SAB 80C166 single step

Abstract: marking T34 "marking ca" 88C166 80C166 80C166E
Contextual Info: SIEMENS Microcomputer Components Technical Support Group Munich HL MCB MC PD 1 Errata Sheet September 10, 1993 / Release 1.0 Device : Stepping Code / Marking : SAB 80C166E CC This errata sheet describes the functional problems and the deviations from the electrical and timing specification known in this step. The problems described in

Contextual Info: EN29LV800C Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the

cFeon EN

Abstract: cFeon sg32 diode EN29LV640B 7400 4p toggle switch 555 data sheet cFeon EN29LV640B cFeon F data sheet 555
Contextual Info: EN29LV640T/B Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the

Contextual Info: FLASH AS8FLC1M32 • • • • • • • OPTION Access Speed 70ns* 90ns 100ns 120ns *Contact factory MARKING -70 -90 -100 -120 61 62 63 64 65 66 67 68 01 02 03 04 05 06 07 57 14 76 I/O5 I/O6 I/O7 GND I/O8 I/O9 15 55 16 54 17 53 18 52 19 51 20 50 I/O10

Contextual Info: SRAM MT5C2561 Austin Semiconductor, Inc. 256K x 1 SRAM PIN ASSIGNMENT Top View AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-88725 • SMD 5962-88544 • MIL-STD-883 24-Pin DIP (C) (300 MIL) 28-Pin LCC (EC) A8 A7 A6 Vcc A17 SRAM MEMORY ARRAY 3 2 1 28 27

Contextual Info: SRAM MT5C1005 256K x 4 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS 32-Pin LCC (EC) 32-Pin SOJ (DCJ) 28-Pin DIP (C) (400 MIL) •MIL-STD-883 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 CE\ OE\ Vss FEATURES • • •

SMD MARKING A16

Contextual Info: SRAM MT5C1001 Limited Availability 1M x 1 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-92316 • MIL-STD-883 A10 A11 A12 A13 A14 A15 NC A16 A17 A18 A19 Q WE\ Vss FEATURES • • • • • • • 32-Pin LCC (EC)

smd transistor a9

Abstract: a15 SMD A19 SMD smd marking A5 10 35L A16 SMD SMD A18 Transistor SMD a7 Transistor smd diode a5 MT5C1001
Contextual Info: SRAM MT5C1001 Limited Availability Austin Semiconductor, Inc. 1M x 1 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-92316 • MIL-STD-883 A10 A11 A12 A13 A14 A15 NC A16 A17 A18 A19 Q WE\ Vss FEATURES •

24LCxx

Abstract: 24xx eeprom STMC2 4a24 sot-23-5 EEPROM 24xxx MARKING CODE l1nn A11 MARKING CODE 5PIN 24LC025 24LC16B Data Sheet a13 marking sot23
Contextual Info: 24AA00/24LC00/24C00 24AA014/24LC014 24AA02/24LC02B 24AA024/24LC024 24AA04/24LC04B 24AA16/24LC16B 24AA64/24LC64/24FC64 24AA256/24LC256/24FC256 24AA01/24LC01B 24C01C 24C02C 24AA025/24LC025 24AA08/24LC08B 24AA32A/24LC32A 24AA128/24LC128/24FC128 24AA512/24LC512/24FC512

ESPC

Abstract: MSDR SAA7174 R20 marking Upc 141 uPC 251 V17 marking code 110B CRC-10 MC92500
Contextual Info: MOTOROLA Order this document by MC92501/D SEMICONDUCTOR TECHNICAL DATA MC92501 Advance Information ATM Cell Processor The ATM Cell Processor MC92501 is an Asynchronous Transfer Mode (ATM) layer device composed of dedicated high-performance ingress and egress cell

smd marking a26

Abstract: AN10 AN11 AN12 AN13 AN23 AN24 AN29 CS1088 CS1088XN40
Contextual Info: CS1088 Vacuum Fluorescent Display Tube Driver The VFD Driver is a microprocessor interface IC that drives a multiplexed VF Vacuum Fluorescent display tube. It consists of a 34–bit shift register, a 34–bit transparent data latch, a metal mask ROM, six 20 mA anode output drivers, twenty–five 2 mA anode

VDR 0047

Contextual Info: HY62U8400A Series 512Kx8bit CMOS SRAM Document Title 512K x8 bit 3.0V Low Power CMOS slow SRAM Revision History Revision No History Draft Date 04 Revision History Insert Revised - Insert 70ns Part - Improved standby current Isb1 : 30uA ¡ æ20uA Jul.26.2000

spansion top marking am29lv

Abstract: S29CL016J S29CD016J S29CD-J S29CL-J Spansion wafer marking spansion am29f part marking
Contextual Info: S29CD016J/S29CL016J Known Good Die 16 Megabit 512k x 32-Bit CMOS 2.6 or 3.3 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory Supplement (Advance Information) General Description The Spansion S29CD016J and S29CL016J devices are Floating Gate products fabricated in 110 nm process technology.

SoRIMM

Abstract: ic marking B48 711 B34 a64 pcb rdram 600 mhz marking a20 5pin
Contextual Info: Advance Information RAMBUS Rambus® SO-RIMM Module with 128/144Mb RDRAMs Overview Key Timing Parameters The Rambus® SO-RIMM™ module is a general purpose high-performance memory subsystem suitable for a broad range of applications including computer memory, mobile “Thin and Light” PCs,

diode MARKING CODE A9

Abstract: LCC-40P-M02
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-20832-3E FLASH MEMORY CMOS 4M 512K x 8 BIT MBM29LV004T-12-X/MBM29LV004B-12-X • FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands

Contextual Info: HY62V8200B Series 256Kx8bit CMOS SRAM Document Title 256K x8 bit 3.3V Low Power CMOS slow SRAM Revision History Revision No History Draft Date 03 Initial Revision History Insert Revised - Improved operating current Icc1 : 60mA -> 35mA Jul.29.2000 Final 04

capacitor 15000 uf 50WV

Abstract: ERE22 T3D 54 DIODE T3D DIODE GRP033 ATIC 112 diode marking 62 t3d ultrasonic motion detector sensor GRM42D T3D 28 diode
Contextual Info: Please read CAUTION and Notice in this catalog for safety. This catalog has only typical specifications. Therefore you are requested to approve our product specification or to transact the approval sheet for product specification, before your ordering. C02E8.pdf 01.7.26

XC95288XL-10PQG208I

Abstract: XC95288XL-10TQ144I XC95288XL-10PQG208C XC95288XL XC95288XL-10TQG144C XAPP114 XAPP427 XC9500XL XC95288 xc95288xl-7fg256c
Contextual Info: XC95288XL High Performance CPLD DS055 v1.8 July 15, 2004 5 Features • • • • • • • • • • • 6 ns pin-to-pin logic delays System frequency up to 208 MHz 288 macrocells with 6,400 usable gates Available in small footprint packages - 144-pin TQFP (117 user I/O pins)

a176b

Abstract: 75176B
Contextual Info: SN65176B, SN75176B DIFFERENTIAL BUS TRANSCEIVERS SLLS101D – JULY 1985 – REVISED APRIL 2003 D D D D D D D D D D D D D Bidirectional Transceivers Meet or Exceed the Requirements of ANSI Standards TIA/EIA-422-B and TIA/EIA-485-A and ITU Recommendations V.11 and X.27

Contextual Info: S71PL-J Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 256M/128/64/32 Megabit (16/8/4/2M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static RAM/pSRAM Data Sheet (Advance Information)