MARKING A17 Search Results

a1718

Abstract: KA1718 k a1718 A-1718 KA1718Y KTA1718L A1718Y KTA1718
Contextual Info: SEMICONDUCTOR KTA1718L MARKING SPECIFICATION IPAK PACKAGE 1. Marking method Laser Marking or Ink Marking 2. Marking K A1718 Y 016 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name A1718 KTA1718L 3 hFE Grade Y O,Y 4 Lot No. 016 00.12.27 Revision No :

a1703

Abstract: TO-126 KTA1703
Contextual Info: SEMICONDUCTOR KTA1703 MARKING SPECIFICATION TO-126 PACKAGE 1. Marking method Laser Marking or Ink Marking 2. Marking K A1703 Y 816 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name A1703 KTA1703 3 hFE Grade Y O,Y 4 Lot No. 816 98.06.23 Revision No :

a1700

Abstract: Ka1700 A1700 to-126 KTA1700
Contextual Info: SEMICONDUCTOR KTA1700 MARKING SPECIFICATION TO-126 PACKAGE 1. Marking method Laser Marking or Ink Marking 2. Marking K A1700 Y 816 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name A1700 KTA1700 3 hFE Grade Y O,Y 4 Lot No. 816 98.06.23 Revision No :

a1704

Abstract: TO126 package TO126 KTA1704 TO-126
Contextual Info: SEMICONDUCTOR KTA1704 MARKING SPECIFICATION TO-126 PACKAGE 1. Marking method Laser Marking or Ink Marking 2. Marking K A1704 Y 816 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name A1704 KTA1704 3 hFE Grade Y O,Y 4 Lot No. 816 98.06.23 Revision No :

a1718

Abstract: KA1718 k a1718 KTA1718D A-1718 KA1718Y a1718y A17-18 hFE kec
Contextual Info: SEMICONDUCTOR KTA1718D MARKING SPECIFICATION DPAK PACKAGE 1. Marking method Laser Marking or Ink Marking 2. Marking K A1718 Y 016 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name A1718 KTA1718D 3 hFE Grade Y O,Y 4 Lot No. 016 00.12.27 Revision No :

A1725

Abstract: k a1725 KTA1725
Contextual Info: SEMICONDUCTOR KTA1725 MARKING SPECIFICATION TO-220IS PACKAGE 1. Marking method Laser Marking or Ink Marking. 2. Marking 1 K 2 A1725 O 3 2002. 7. 11 216 4 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name A1725 KTA1725 3 hFE Grade O R,O 4 Lot No.

A1705

Abstract: transistor a1705 KA1705 KTA1705
Contextual Info: SEMICONDUCTOR KTA1705 MARKING SPECIFICATION TO-126 PACKAGE 1. Marking method Laser Marking or Ink Marking 2. Marking K A1705 Y 816 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name A1705 KTA1705 3 hFE Grade Y O,Y 4 Lot No. 816 98.06.23 Revision No :

A1715

Abstract: TO126 package Ka1715 hFE kec KTA1715 TO-126
Contextual Info: SEMICONDUCTOR KTA1715 MARKING SPECIFICATION TO-126 PACKAGE 1. Marking method Laser Marking 2. Marking K A1715 Y 016 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name A1715 KTA1715 3 hFE Grade Y O,Y 4 Lot No. 016 00.12.27 Revision No : 00 Year 0 ~ 9 : 2000~2009

A1709

Abstract: TO126 package KTA1709 TO126
Contextual Info: SEMICONDUCTOR KTA1709 MARKING SPECIFICATION TO-126 PACKAGE 1. Marking method Laser Marking 2. Marking K A1709 Y 016 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name A1709 KTA1709 3 hFE Grade Y O,Y 4 Lot No. 016 00.12.27 Revision No : 00 Year 0 ~ 9 : 2000~2009

A1727

Abstract: A1727 transistor
Contextual Info: 2SA1727F5 Transistor, PNP Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: A1727*Q, where ★ is hFE code and □ is lot number • high breakdown voltage, V qeo = - 400V low collector saturation voltage, ^C E (sat) ^ -1.0 V for

MKK400-D-25-01

Abstract: B25667A4197A375 siemens 230 96 B25667-A4467-A3 MKK400-D-12 3x82 A2757 A4247 MKK415-D-20 MKK480-D-20-01
Contextual Info: Siemens Matsushita Components Phase Cap MKK-Capacitor B25667-A2157-A175 MKK230-I-2,5-01 Characteristics CN QN UN fN IN tanδ 0 Marking 1x150 µF +10/-5% 2.5 kvar AC 230 V 50 Hz 10.8 A 2 ⋅ 10-4 Maximum ratings Umax Imax îs du/dt max (du/dt)s 1.1 ⋅ UN (8 hours daily)

Contextual Info: PhaseCap B25667-A5217-A175 MKK525-I-18,6-01 Characteristics CN UN fN QN IN tan δ 0 1x 215 AC 525 50 18,6 1x 36 µF ±5 % V Hz 60 Hz kvar 22,3 kvar A 43 A Marking 0,2 W/kvar dielectric Maximum ratings The information in our data book / sheet describes the type of

A1727 transistor

Abstract: A1727 transistor C1000 J001 transistor a1727 c1000 transistor 2sa 102 transistor D014B 2sa172 transistor 81 120 w 63
Contextual Info: 2SA1727F5 Transistor, PNP Features Dimensions Units : mm • available in C P T F5 (SC-63) package • package marking: A1727-AQ, where ★ is hFE code and □ is lot number 6.5 ± 0.2 high breakdown voltage, r r • 2SA1727F5 (CPT F5) C1 51 -0.1 I 1 V q e o = _4 0 0 V

P6SBMJ24A

Abstract: B17C B14A A17a B14A equivalent MARKING A19c marking A32A P4SSMJ24A A12A a32a
Contextual Info: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 TYPE Marking Break Down Voltage VBR V @ IZT Test Current Min Nom Max Volts Volts Volts @IT Working Peak Reverse Voltage Maximum Reverse Leakage Current Maximum Reverse Current

5800c

Abstract: bios programmer block diagram of crusoe processor TM5500-800 chip morphing TM5800 feature sdr sdram pcb layout TM5800 TM5800-733 TM5800-800
Contextual Info: TM5500/TM5800 Version 1.0 Data Book Crusoe Processors Described in this Document Processor SKU Memory Interface Package Marking L2 Cache Max Core Core Frequency Voltage Tj Max TDP DDR SDR TM5800-933 CoolRun80 DDR/SDR 5800C093310 512 KBytes 933 MHz 0.90-1.35 V

bios programmer

Abstract: sdr sdram pcb layout TM5800-1000-LP processor cross reference cdq42 5800P100021 5800R100021 TM5500 TM5800 16M X 32 SDR SDRAM
Contextual Info: TM5800 Version 2.1 Data Book Crusoe Processors Described in this Document Processor Memory Package Marking L2 Cache Max Core Frequency Core Voltage TM5800-1000-ULP CoolRun80 DDR/SDR 5800T100021 512 KBytes 1000 MHz TM5800-1000-VLP CoolRun80 DDR/SDR Tj Max TDP

B14A equivalent

Abstract: zener b14a P6SBMJ24A B17C tvs2315pt TVSS5VESPT diode B14A B14A zener equivalent A17a P4SSMJ24A
Contextual Info: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 Zener Voltage VZ V @ IZT TYPE Test current Working Peak Reverse Voltage IZT(mA) Vrwm(V) Marking Min Nom Max Volts Volts Volts Maximum Maximum Maximum Reverse reverse Reverse

Contextual Info: PhaseCap B25667-A5147-A175 MKK525-I-12,5-01 4RB5 125-5 AA 52 Characteristics CN UN fN QN IN tan δ 0 1x 144 AC 525 50 12,5 1x 24 µF ±5 % V Hz kvar A Marking 60 Hz 15 kvar 29 A 0,2 W/kvar dielectric Maximum ratings The information in our data book / sheet describes the type of

kvar

Abstract: B25667-A2207-A175
Contextual Info: PhaseCap B25667-A2207-A175 MKK230-I-3,3-01 4RB5 033-5 AA 23 Characteristics CN UN fN QN IN tan δ 0 1x 200 AC 230 50 3,3 1x 15 µF ±5 % V Hz kvar A Marking 60 Hz 4 kvar 18 A 0,2 W/kvar dielectric Maximum ratings The information in our data book / sheet describes the type of

Contextual Info: PhaseCap B25667-A2317-A175 MKK230-I-5-01 4RB5 052-5 AA 23 Characteristics CN UN fN QN IN tan δ 0 1x 313 AC 230 50 5,2 1x 23 µF ±5 % V Hz kvar A Marking 60 Hz 6,2 kvar 28 A 0,2 W/kvar dielectric Maximum ratings The information in our data book / sheet describes the type of

DIN IEC 249

Contextual Info: PhaseCap B25667-A3247-A175 MKK400-I-12,5-01 4RB5 125-5 AA 40 Characteristics CN UN fN QN IN tan δ 0 1x 249 AC 400 50 12,5 1x 31 µF ±5 % V Hz kvar A Marking 60 Hz 15 kvar 37 A 0,2 W/kvar dielectric Maximum ratings The information in our data book / sheet describes the type of

block diagram of crusoe processor

Abstract: bios programmer SDR100 TM5800 TM58EL-800 crusoe "sdr sdram" design guideline TM58E SDR100 sdram dimm TM55EL-667
Contextual Info: Crusoe SE TM55E/TM58E Version 2.1 Data Book Crusoe SE Embedded Processors Described in this Document Processor SKU Memory Package Marking L2 Cache Max Core Core Frequency Voltage Temp Range TDP DDR SDR TM58EX-933 100°C DDR/SDR 58EXAE093321 512 KBytes 933 MHz

hysf643

Contextual Info: HY62SF16403A Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 1.7 ~ 2.3V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 08 Icc1 Value change. 30mA -> 20mA Nov.22.2000 Final 09 Marking Information add tBLZ / tOLZ value is changed

HY628400ALLG-55

Abstract: VDR 0047 HY628400ALG-55 hy628400allg HY628400ALLG-I
Contextual Info: HY628400A Series 512Kx8bit CMOS SRAM Document Title 512K x8 bit 5.0V Low Power CMOS slow SRAM Revision History Revision No History Draft Date 04 Revision History Insert Jul.06.2000 Final 05 Revised - Change Iccdr Value : 15uA => 20uA Aug.04.2000 Final 06 Marking Information Add