A1709 Search Results

A1709

Abstract: TO126 package KTA1709 TO126
Contextual Info: SEMICONDUCTOR A1709 MARKING SPECIFICATION TO-126 PACKAGE 1. Marking method Laser Marking 2. Marking K A1709 Y 016 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name A1709 A1709 3 hFE Grade Y O,Y 4 Lot No. 016 00.12.27 Revision No : 00 Year 0 ~ 9 : 2000~2009

mswse-044

Abstract: MSWSE-044-10
Contextual Info: MSWSE-044-10 Silicon PIN Diode Switch Element 1 0805P PIN FUNCTION 1 ANODE 2 CATHODE 2 2 non-hermetic Description Features The MSWSE-044-010 is a PIN diode SPST switch element designed for medium incident power applications, up to 40W C.W. It has low insertion loss

MSWSHB-020-30

Contextual Info: MSWSHB-020-30 PIN DIODE SHUNT SWITCH ELEMENT 2012 Molden Plastic DFN Description Features A broadband, high linearity, medium power shunt switch element in a 1.9 X 1.1 mm DFN package. This device is designed for wireless telecommunications infrastructure and test instrument applications. It is

ecg semiconductors master replacement guide

Abstract: ecg master replacement guide mkl b32110 siemens mkp B32650 c945 p 331 ks transistor IC,MASTER master replacement guide Kennlinie KTY 10-6 siemens b32110 A2005 transistor
Contextual Info: Liebe Schuricht-Kunden, Ihre Zufriedenheit ist unser größtes Anliegen. Aus diesem Grunde versuchen wir, Ihnen Informationen und Ware stets zum richtigen Zeitpunkt verfügbar zu machen. Das gilt insbesondere auch für die Produkte der Siemens AG mit den drei

pin diode switch up to 10 GHz

Abstract: MSWSE-010-15 A 0503
Contextual Info: MSWSE-010-15 Silicon PIN Diode Switch Element 0503 Molded Plastic DFN Package Description Features The MSWSE-010-15 is a PIN diode SPST switch element designed for medium incident power applications, up to 10W C.W. It has low insertion loss and medium isolation below 3.0 GHz.

MSPD2018

Abstract: MZBD-9161 ZENER 15B1 msd700 package inductance MSPD2018-H50 B20 zener diode glass MPN7320 MZBD9161 MLP7121 15B1 zener diode
Contextual Info: Aeroflex / Metelics, Inc. Microwave Diodes & Passive Semiconductor Devices Microwave Diodes & Passive Semiconductor Devices Aeroflex / Metelics, Inc. Aeroflex / Metelics, Inc. East Coast Operations 54 Grenier Field Road, Londonderry, NH 03053 Tel: 603 641-3800

Contextual Info: MSWSE-050-10 Silicon PIN Diode Switch Element 1 PIN FUNCTION 1 ANODE 2 CATHODE 2 2 0805P non-hermetic Description Features The MSWSE-050-10 is a PIN diode SPST switch element designed for medium incident power applications, up to 50 W C.W. It has low insertion loss.

Contextual Info: MSWSH-100-30 PIN Diode Shunt Switch Element 2 1 1 2 CM22 Heat sink is cathode, epoxy encapsulation Description A broadband, high linearity, high power shunt switch element in a 10 x 4 mm bolt channel metal package. This device is designed for WiMax, Wibro, WLAN, TD-SCDMA

Contextual Info: MSWSHB-020-30 PIN DIODE SHUNT SWITCH ELEMENT 2012 Molden Plastic DFN Description Features A broadband, high linearity, medium power shunt switch element in a 1.9 X 1.1 mm DFN package. This device is designed for wireless telecommunications infrastructure and test instrument applications. It is

Contextual Info: MSWSE-044-10 Silicon PIN Diode Switch Element 1 0805P PIN FUNCTION 1 ANODE 2 CATHODE 2 2 non-hermetic Description Features The MSWSE-044-010 is a PIN diode SPST switch element designed for medium incident power applications, up to 40W C.W. It has low insertion loss

Metelics

Contextual Info: MSWSSB-020-30 PIN DIODE SHUNT SWITCH ELEMENT 2012 Molden Plastic DFN Description Features A broadband, High Linearity medium power series shunt switch element in a 1.9 X 1.1 mm DFN package. This device is designed for wireless Telecommunication infrastructure and test instrument applications. It

MSWSE-050-10

Contextual Info: MSWSE-050-10 Silicon PIN Diode Switch Element 1 PIN FUNCTION 1 ANODE 2 CATHODE 2 2 0805P non-hermetic Description Features The MSWSE-050-10 is a PIN diode SPST switch element designed for medium incident power applications, up to 70W C.W. It has low insertion loss.

l6703

Abstract: L6283 l6278 L6284 L6916 l6262 A1658 SVC 561 14 C3041 A1671
Contextual Info: RVCT 3.1 Build Tools - Errors and Warnings March 2008 Introduction This document lists the errors and warning messages that can be generated by the Build Tools of the ARM RealView Compilation Tools RVCT version 3.1, including patches. RVCT 3.1 is provided with RVDS

Contextual Info: MSWSSB-020-30 PIN DIODE SHUNT SWITCH ELEMENT 2012 Molden Plastic DFN Description Features A broadband, High Linearity medium power series shunt switch element in a 1.9 X 1.1 mm DFN package. This device is designed for wireless Telecommunication infrastructure and test instrument applications. It

ICP30

Abstract: 2SA1709
Contextual Info: A1709 / 2SC4489 Ordering number : EN3096A SANYO Semiconductors DATA SHEET A1709/2SC4489 PNP/NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Features • • Adoption of FBET, MBIT processes Fast switching speed • High breakdown voltage, large current capacity

MSWSE-005-15

Abstract: Metelics STD-J-20C
Contextual Info: MSWSE-005-15 Silicon PIN Diode Switch Element 0503 Molded Plastic DFN Package Description Features The MSWSE-005-15 is a PIN diode SPST switch element designed for medium incident power applications, up to 4W C.W. It has low insertion loss and medium isolation below 6.0 GHz.

10 GHz pin diode

Contextual Info: MSWSHB-020-30 PIN DIODE SHUNT SWITCH ELEMENT 2012 Molden Plastic DFN Description Features A broadband, high linearity, medium power shunt switch element in a 1.9 X 1.1 mm DFN package. This device is designed for wireless telecommunications infrastructure and test instrument applications. It is

metelics

Contextual Info: MSWSHB-020-30 2012
Molden Plastic DFN Description Features A broadband, high linearity, medium power shunt switch element in a 1.9 X 1.1 mm DFN package. This device is designed for wireless telecommunications infrastructure and test instrument applications. It is also suited for other

Contextual Info: MSWSE-044-10 Silicon PIN Diode Switch Element 1 0805P PIN FUNCTION 1 ANODE 2 CATHODE 2 2 non-hermetic Description Features The MSWSE-044-010 is a PIN diode SPST switch element designed for medium incident power applications, up to 40W C.W. It has low insertion loss

Contextual Info: MSWSHB-020-30 PIN DIODE SHUNT SWITCH ELEMENT 2012 Molden Plastic DFN Description Features A broadband, high linearity, medium power shunt switch element in a 1.9 X 1.1 mm DFN package. This device is designed for wireless telecommunications infrastructure and test instrument applications. It is

A 0503

Contextual Info: MSWSE-005-15 Silicon PIN Diode Switch Element 0503 Molded Plastic DFN Package Description Features The MSWSE-005-30 is a PIN diode SPST switch element designed for medium incident power applications, up to 4W C.W. It has low insertion loss and medium isolation below 6.0 GHz.

MSWSHB-020-30

Contextual Info: MSWSHB-020-30 PIN DIODE SHUNT SWITCH ELEMENT 2012 Molden Plastic DFN Description Features A broadband, high linearity, medium power shunt switch element in a 1.9 X 1.1 mm DFN package. This device is designed for wireless telecommunications infrastructure and test instrument applications. It is

Contextual Info: MSWSE-010-15 Silicon PIN Diode Switch Element 0503 Molded Plastic DFN Package Description Features The MSWSE-010-15 is a PIN diode SPST switch element designed for medium incident power applications, up to 10W C.W. It has low insertion loss and medium isolation below 3.0 GHz.

l6703

Abstract: asm 1442 L6916E SVC 561 14 L6232E A1659 a1718 a1694 C2068 STR 6765
Contextual Info: RVCT 3.0 SP1 Build Tools - Errors and Warnings Last updated March 2008 Introduction This document illustrates the errors and warning messages that are generated by the Build Tools of ARM RealView Compilation Tools 3.0, 3.0 Service Pack 1, and subsequent 3.0 patches. If you are using ADS