KTA1709 Search Results
KTA1709 Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| KTA1709 | Korea Electronics | General Purpose Transistor | Original | 399.54KB | 2 | ||
| KTA1709 | Korea Electronics | General Purpose Transistor | Original | 74.52KB | 2 | ||
| KTA1709 | Korea Electronics | EPITAXIAL PLANAR PNP TRANSISTOR | Scan | 353.07KB | 2 |
KTA1709 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTA1709 e p it a x ia l p la n a r pnp t r a n s i s t o r STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION. FEATURES • hFE=100~320 Vce=-2V, Ic=-0.5A . • Low Collector Saturation Voltage. : VCE(sat)=-0.5V (IC=-3A, IB=-75mA). |
OCR Scan |
kta1709-75ma | |
KTA1709Contextual Info: SEMICONDUCTOR KTA1709 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION. A B D C E FEATURES F hFE=100 320 VCE=-2V, IC=-0.5A . Low Collector Saturation Voltage. G : VCE(sat)=-0.5V (IC=-3A, IB=-75mA). H DIM A |
Original |
kta1709-75ma100ms-100ma+1 | |
KTA1709Contextual Info: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTA1709 EPITAXIAL PLANAR PNP TRANSISTOR STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION. FEATURES • hFE=100~320 Vce=-2V, Ic=-0.5A . • Low Collector Saturation Voltage. : VcE(sat)~—0.5V dc=-3A, IB=-75mA). |
OCR Scan |
kta1709-75ma | |
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Contextual Info: SEMICONDUCTOR KTA1709 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION. A B D C E FEATURES F hFE=100 320 VCE=-2V, IC=-0.5A . Low Collector Saturation Voltage. G : VCE(sat)=-0.5V (IC=-3A, IB=-75mA). H DIM A |
Original |
kta1709-75ma100ms-150ma | |
A1709
Abstract: TO126 package KTA1709 TO126
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Original |
kta1709o-126a1709to126 package+1 | |
KTA1709Contextual Info: SEMICONDUCTOR KTA1709 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION. A B D C E FEATURES ᴌhFE=100ᴕ320 VCE=-2V, IC=-0.5A . ᴌLow Collector Saturation Voltage. F G : VCE(sat)=-0.5V (IC=-3A, IB=-75mA). |
Original |
kta1709-75ma100ms-150ma | |
alternator diode 1776 B
Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
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Original |
hig86-755-3679515alternator diode 1776 b2az marking transistor sot-23smd sot23 transistor mark y2+7 | |
khb*9D5N20P
Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
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Original |
2n2904ebc859kds135s2n2906e+16 | |
CHINA TV FBT
Abstract: transistor 2N3906 smd 2A SOT23 TS4B05G transistor 2N3904 smd 2A SOT23 fbt tv KIA7812API KIA431A transistor transistor KIA431A CHINA TV uoc 2N60 MOSFET SMPS
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Original |
o-92mkrc102mkrc112mo-92l+16 | |
KIA78*pI
Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
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Original |
2n2904ebc859kds135s2n2906e+16 | |
MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
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Original |
mn1280kgt50n60kdabc547 smd transistorkia1117af+6 | |
oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
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Original |
kia7900pitc7sh04fukic7sh04fusc604+16 | |
MB4213
Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
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Original |
ssip-12kia6283kkia7217apssip-10+13 |