A1703 Search Results

a1703

Abstract: TO-126 KTA1703
Contextual Info: SEMICONDUCTOR A1703 MARKING SPECIFICATION TO-126 PACKAGE 1. Marking method Laser Marking or Ink Marking 2. Marking K A1703 Y 816 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name A1703 A1703 3 hFE Grade Y O,Y 4 Lot No. 816 98.06.23 Revision No :

Contextual Info: iü R A D IA L I T1T1C 111Lt R A17030110 TECHNICAL DATA SHEET HIGH POWER CORXIRL RTTENURTOR LTR. R ELECTRICAL CHARACTERISTICS : FREQUENCY RRNGE D C - 3 GHz IMPEDANCE 5 0 Ohms RTTENUATION - NOMINAL 3 0 dB . RTTENURTION - RCCURACY M A X I M U M V.S.W. R. + 2 dB

MGS903

Abstract: GC210
Contextual Info: MGS800/900 Series GaAs Schottky Diodes Description Features The Aeroflex / Metelics MGS Series of GaAs Schottky diodes are designed for optimum performance in millimeter wave components operating to 60 GHz. • • • Fourteen different configurations Beam lead, Flip Chip or packaged devices

Contextual Info: MMPN Series PIN Diodes Description Features The Aeroflex / Metelics MMPN series are distributed PIN diodes that are integrated into a 50 W microstrip transmission line. They are designed to be operated as a shunt, reflective attenuators. • • High isolation

JANTX 1N916

Abstract: diode 1n4446 DA-Series 1n4148 D035 1N4532 1N916 JANTX general electric 1n4727 1N4148.1N4448 1N4148 1N4151
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES P a rt N u m b e r BV @ 100/1A M in . V I r @ 2 5 ° C M a x. (ri A ) @ V r (V) V f (V ) M a x. @ I f (m A ) Co @ DV (pf) 1N914 100 25 30 1.00 10 4 1N 914A 100 25 20 1.00 20 4 1N914B 100 25 20 1.00 100 1N916 100 25 20

LN4863

Abstract: 1N4532 IN430 1N4148 1N4149 1N4151 1N4152 1N914 1N914A 1N914B
Contextual Info: SILICON S I G N A L DIODES 100 MA TYPES P a rt N u m b e r BV @ 100/1A M in . V I r @ 2 5 ° C M a x. (ri A ) @ V r (V) V f (V ) M a x. @ I f (m A ) Co @ DV (pf) 1N914 100 25 30 1.00 10 4 1N 914A 100 25 20 1.00 20 4 1N914B 100 25 20 1.00 100 1N916 100 25

MMPN-080045

Abstract: MMPN-080150 MMPN080150
Contextual Info: MMPN Series PIN Diodes Description Features The Aeroflex / Metelics MMPN series are distributed PIN diodes that are integrated into a 50 W microstrip transmission line. They are designed to be operated as a shunt, reflective attenuators. • • High isolation

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

E28X

Contextual Info: 45 V Silicon Varactor Diodes MSV38,000 Series Description Features The work horse of varactors these diodes are built tough with fully passivated mesa construction and Aeroflex / Metelics trimetallization. Featuring a nominal gamma of 0.46 these diodes find application in tunable filters and oscillators up to 18 GHz.

transistor a1413

Abstract: a1413 a2305 4b42 A14129 ls-t73 transistor a1412 a2400 a2380 A18004
Contextual Info: Motorola XGATE Assembler Revised 02-Jun-2004 Metrowerks and the Metrowerks logo are registered trademarks of Metrowerks Corporation in the United States and/ or other countries. CodeWarrior is a trademark or registered trademark of Metrowerks Corporation in the United States

in4151

Abstract: 1N4532 1N4148 1N4149 1N4151 1N4152 1N914 1N914A 1N914B 1N916
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES Part Number 1N914 1N 914A 1N 914B BV @ 100/1A Min. V I r @ 2 5 °C Max. (ri A) @ V r (V ) V f Max. (V ) @ I f (m A ) Co @ DV (pf) trr (77S E C ) Package Outline Package Outline Number 100 100 25 30 1.00 10 4 25 20 1.00

GC310

Abstract: mgs904 MGS800 mgs801 MGS912 MGS901 equivalent MGS903 GB110 MGS901 b882
Contextual Info: MGS800/900 Series GaAs Schottky Diodes Description Features The Aeroflex / Metelics MGS Series of GaAs Schottky diodes are designed for optimum performance in millimeter wave components operating to 60 GHz. • • • Fourteen different configurations Beam lead, Flip Chip or packaged devices

smmd-840

Abstract: MMD-810 MMD832-0805-2 SMMD837-SOD323 MMDB30-0402 MMD-835
Contextual Info: Silicon Step Recovery Diodes Description Features The diodes feature fully passivated, true mesa construction for sharp transitions and improved stability. The beam lead SRDs have the industry’s fastest transition times for millimeter wave multiplication and picosecond pulse forming.

varactor 36z

Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r

1n4148 D035

Abstract: DHD806 DHD800 1N916 JANTX JANTX 1N916 1N4532 DE104 DZ805 IN4305 1N4148
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES Part Number 1N914 1N 914A 1N 914B BV @ 100/1A Min. V I r @ 2 5 °C Max. (ri A) @ V r (V) V f Max. (V ) @ I f (m A ) Co @ DV (pf) trr (77S E C ) Package Outline Package Outline Number 100 100 25 30 1.00 10 4 25 20 1.00

in4305

Abstract: diode 1n4305 1n4148 D035 1N4532 JANTX 1N916 1N4148 1N4149 1N4151 1N4152 1N914
Contextual Info: SILICON S I G N A L DIODES 100 MA TYPES P a rt N u m b e r BV @ 100/1A M in . V I r @ 2 5 ° C M a x. (ri A ) @ V r (V) V f (V ) M a x. @ I f (m A ) Co @ DV (pf) 1N914 100 25 30 1.00 10 4 1N 914A 100 25 20 1.00 20 4 1N914B 100 25 20 1.00 100 1N916 100 25

DE113 silicon diode

Abstract: 1N4532 1N4148 1N4149 1N4151 1N4152 1N914 1N914A 1N914B 1N916
Contextual Info: SILICON S I G N A L DIODES 100 MA TYPES P a rt N u m b e r BV @ 100/1A M in . V I r @ 2 5 ° C M a x. (ri A ) @ V r (V) V f (V ) M a x. @ I f (m A ) Co @ DV (pf) 1N914 100 25 30 1.00 10 4 1N 914A 100 25 20 1.00 20 4 1N914B 100 25 20 1.00 100 1N916 100 25

in4727

Abstract: 6RW51 pico amp meter 1N4532 1N4148 1N4149 1N4151 1N4152 1N914 1N914A
Contextual Info: SILICON S I G N A L DIODES 100 MA TYPES P a rt N u m b e r BV @ 100/1A M in . V I r @ 2 5 ° C M a x. (ri A ) @ V r (V) V f (V ) M a x. @ I f (m A ) Co @ DV (pf) 1N914 100 25 30 1.00 10 4 1N 914A 100 25 20 1.00 20 4 1N914B 100 25 20 1.00 100 1N916 100 25

MMD0840

Abstract: MMD810-T86 MMDB30-B11 mmdb30-0402 MMDB30-E28 MMD820-0805-2 SMMD-840 MMD820-E28 SMMD840-SOD323 MMD805-0805-2
Contextual Info: Silicon Step Recovery Diodes Description Features The diodes feature fully passivated, true mesa construction for sharp transitions and improved stability. The beam lead SRDs have the industry’s fastest transition times for millimeter wave multiplication and picosecond pulse forming.

Contextual Info: MGS800/900 Series GaAs Schottky Diodes Description Features The Aerolex / Metelics MGS Series of GaAs Schottky diodes are designed for optimum performance in millimeter wave components operating to 60 GHz. • • • Fourteen different configurations Beam lead, Flip Chip or packaged devices

LS 2027 audio amp

Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
Contextual Info: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

E10 varistor

Abstract: A170300 A0200-4 SrTiO3 oxide
Contextual Info: STRONTIUM TITANATE RING VARISTOR FEATURES Conductor ceramic is made of titanium oxide and strontium. Used in the range of low voltage E10=1.5~60V. E 10 =1.5~60V Wide capacitance ,absorb the noise in a wide frequency range. Excellent non-linearity voltage;

MGS903

Abstract: MGS905 GB310 Aeroflex MGS905
Contextual Info: MGS800/900 Series GaAs Schottky Diodes Description Features The Aeroflex / Metelics MGS Series of GaAs Schottky diodes are designed for optimum performance in millimeter wave components operating to 60 GHz. • • • Fourteen different configurations Beam lead, Flip Chip or packaged devices