MARKING A1 TRANSISTOR Search Results

sot23 marking y5

Abstract: BZX84C18 FMMD914 FMMD6050 BZX84-C27 BAR99 MARKING W4 sot 23 C3V9 C5V1 c5v6
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION DIODES DIODES Device Type Device Type Device marking Device marking BAL99 E2 BZX84-C43 X6 BAR99 E3 BZX84-C47 X7 BAS16 A3 FMMD914 5D BAV70 A4 FMMD6050 5A BAV74 JA BAV99 A7 BAW56 A1 HD2A 5D HD3A

DSAF001

Contextual Info: Tentative DSAF001 Total pages page DSAF001 Silicon PNP epitaxial planar type For general amplification Marking Symbol : A1 Package Code : ML3-N4-B Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)

DSC8505

Contextual Info: DSC8505 Tentative Total pages page DSC8505 Silicon NPN epitaxial planar type For Low-frequency amplifier Marking Symbol : 5G Package Code : MT-2-A1-B Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)

DSC8Q01

Contextual Info: DSC8Q01 Tentative Total pages page DSC8Q01 Silicon NPN epitaxial planar dalington type For Low-frequency amplifier Marking Symbol : 5K Package Code : MT-2-A1-B Internal Connection C Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open

DSA4001

Abstract: a1r marking Marking a1s
Contextual Info: Tentative DSA4001 Total pages page DSA4001 Silicon PNP epitaxial planar type For general amplifier Marking Symbol : A1 Package Code : NS-B1-B-B Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)

DSC8102

Contextual Info: DSC8102 Tentative Total pages page DSC8102 Silicon NPN epitaxial planar type For Low-frequency amplifier Marking Symbol : 5D Package Code : MT-2-A1-B Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)

MT-2-A1-B

Abstract: DSA8101
Contextual Info: DSA8101 Tentative Total pages page DSA8101 Silicon PNP epitaxial planar type For low-frequency output amplification Marking Symbol 4C Package Code : MT-2-A1-B Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual Switching Diodes LBAW56WT1G z Pb-Free Package is Available. 3 DEVICE MARKING 1 LBAW56WT1G = A1 2 MAXIMUM RATINGS TA = 25°C CASE 419–04, STYLE 4 Rating Symbol Max Unit Reverse Voltag VR Forward Current Peak Forward Surge Current

2N60 transistor

Abstract: all transistor 2N60 transistor 2n60 02N60 2N60 MOSFET MARK y2 y1 marking code transistor 2n60 application 2n60 MOSFEt marking code diode 648
Contextual Info: HI-SINCERITY Spec. No. : MOS200403 Issued Date : 2004.07.01 Revised Date : 2005.07.14 Page No. : 1/6 MICROELECTRONICS CORP. H02N60 Series H02N60 Series Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Power Field Effect Transistor

02n60

Abstract: all transistor 2N60 2N60 2N60 transistor PB40 bridge 2n60 application MOSFET MARK H1 TL 434 H02N60 H02N60E
Contextual Info: HI-SINCERITY Spec. No. : MOS200403 Issued Date : 2004.07.01 Revised Date : 2005.09.28 Page No. : 1/7 MICROELECTRONICS CORP. H02N60 Series H02N60 Series Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Power Field Effect Transistor

SMD transistor MARKING CODE 43

Abstract: TRANSISTOR SMD MARKING CODE A1 TRANSISTOR SMD MARKING CODE 42 SMD Transistor A1 TC114E smd TRANSISTOR code marking 36 smd TRANSISTOR code marking 013 Transistor SMD marking code NV smd transistor 023 TRANSISTOR SMD MARKING CODE X D
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PDTC114E series NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ Product specification Supersedes data of 1999 May 31 2003 Apr 10 Philips Semiconductors Product specification NPN resistor-equipped transistor;

TRANSISTOR SMD MARKING CODE DZ

Abstract: smd code marking LP marking PP16 code PDTA124XE
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PDTC124X series NPN resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ Product specification Supersedes data of 1999 May 18 2003 Apr 10 Philips Semiconductors Product specification NPN resistor-equipped transistors;

PDTC143EK

Abstract: PDTC143E
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PDTC143E series NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ Product specification Supersedes data of 1999 Apr 15 2003 Apr 10 Philips Semiconductors Product specification NPN resistor-equipped transistors;

MOSFET MARK y2

Abstract: transistor mark code t1 01N60 y1 marking code transistor MOSFET MARK H1 marking code n60 mosfet y1 transistor mark code H1 H01N60S H01N60SI
Contextual Info: HI-SINCERITY Spec. No. : MOS200501 Issued Date : 2005.01.01 Revised Date : 2010.11.10 Page No. : 1/6 MICROELECTRONICS CORP. H01N60S Series H01N60S Series Pin Assignment 3-Lead Plastic TO-92 Package Code: A Pin 1: Gate Pin 2: Drain Pin 3: Source N-Channel Power Field Effect Transistor

marking code E5 SMD ic

Abstract: smd transistor marking e5 TA114E Marking Code SMD transistors PDTA114E PDTC114ES smd code marking LP marking PP16 code transistor smd e5 TRANSISTOR SMD MARKING CODE spt
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PDTA114E series PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ Product specification Supersedes data of 1999 May 21 2003 Apr 10 Philips Semiconductors Product specification PNP resistor-equipped transistors;

MOSFET MARK y2

Abstract: MOSFET MARK H1 marking code k1 H01N60S marking A1 TRANSISTOR marking y1 mosfet k 61 y1 mosfet y1 PB40 H01N60SI
Contextual Info: HI-SINCERITY Spec. No. : MOS200501 Issued Date : 2005.01.01 Revised Date : 2006.08.31 Page No. : 1/5 MICROELECTRONICS CORP. H01N60S Series N-Channel Power Field Effect Transistor H01N60S Series Pin Assignment Tab Description 1 This high voltage MOSFET uses an advanced termination scheme to

PDTA144E

Abstract: TRANSISTOR SMD MARKING CODE spt marking A1 smt3 PNP transistor TRANSISTOR SMD MARKING CODE 42 Marking Code SMD transistors smd code marking LP marking PP16 code smd TRANSISTOR code marking e1 PDTA144ES PDTA144EE
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PDTA144E series PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ Product specification Supersedes data of 1999 Apr 20 2003 Apr 10 Philips Semiconductors Product specification PNP resistor-equipped transistors;

MOSFET MARK y2

Abstract: H01N60S H01N60SI H01N60SJ MOSFET MARK H1 mosfet y1
Contextual Info: HI-SINCERITY Spec. No. : MOS200501 Issued Date : 2005.01.01 Revised Date : 2005.09.28 Page No. : 1/5 MICROELECTRONICS CORP. H01N60S Series N-Channel Power Field Effect Transistor H01N60S Series Pin Assignment Tab Description 1 This high voltage MOSFET uses an advanced termination scheme to

MOSFET MARK y2

Abstract: H01N60I MOSFET MARK H1 H01N60 H01N60J TL 434 mosfet sn60
Contextual Info: HI-SINCERITY Spec. No. : MOS200502 Issued Date : 2005.03.01 Revised Date : 2005.09.28 Page No. : 1/5 MICROELECTRONICS CORP. H01N60 Series H01N60 Series Pin Assignment N-Channel Power Field Effect Transistor Tab Description 1 This high voltage MOSFET uses an advanced termination scheme to

MOSFET MARK y2

Abstract: mosfet k 61 y1 mosfet y1 MOSFET MARK H1 marking code k1 marking y1 H01N60I marking A1 TRANSISTOR PB40 H01N60
Contextual Info: HI-SINCERITY Spec. No. : MOS200502 Issued Date : 2005.03.01 Revised Date : 2006.08.31 Page No. : 1/5 MICROELECTRONICS CORP. H01N60 Series H01N60 Series Pin Assignment N-Channel Power Field Effect Transistor Tab Description 1 This high voltage MOSFET uses an advanced termination scheme to

transistor SMD t4

Abstract: PDTC143XE marking code E2 p SMD Transistor PDTA143 PDTA143XE PDTA143X
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PDTC143X series NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ Product specification Supersedes data of 2002 Jan 15 2003 Apr 10 Philips Semiconductors Product specification NPN resistor-equipped transistors;

PDTA143XE

Abstract: PDTC143XE PDTA143X smd code marking LP PDTA143
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PDTA143X series PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ Product specification Supersedes data of 2002 Mar 14 2003 Apr 10 Philips Semiconductors Product specification PNP resistor-equipped transistors;

Field-Effect Transistors

Abstract: SOT54variant diodes PACKAGE
Contextual Info: DISCRETE SEMICONDUCTORS Package outlines Small-signal Field-effect Transistors and Diodes 1999 May 11 PACKAGE INFORMATION Page SOD68 . SOD110 . SOD323 . SOD523 . SOT23 . SOT54 . SOT54variant . SOT143B . SOT143R . SOT323 . SOT343N

TRANSISTOR SMD MARKING CODE spt

Abstract: ta114 Marking Code For SMD Devices SMD PNP MARKING DE PDTA114
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PDTA114T series PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = open Product specification Supersedes data of 1999 Apr 13 2003 Apr 10 Philips Semiconductors Product specification PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = open