PDTC114EE |
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NXP Semiconductors
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PDTC114EE - NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhm - Complement: PDTA114EE ; hFE max:>30 ; hFE min: 30 ; IO max: 100 mA; Input resistor: 10 kOhm; Polarity: NPN ; Ptot max: 150 mW; Resistor ratio: 1 ; VCEO max: 50 V |
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PDTC114EE |
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Philips Semiconductors
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NPN Resistor-Equipped Transistor, R1 = 10 kohm, R2 = 10 kohm |
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PDTC114EE |
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Philips Semiconductors
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NPN resistor-equipped transistor |
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PDTC114EE,115 |
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NXP Semiconductors
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NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhm - Complement: PDTA114EE ; hFE max:>30 ; hFE min: 30 ; IO max: 100 mA; Input resistor: 10 kOhm; Polarity: NPN ; Ptot max: 150 mW; Resistor ratio: 1 ; VCEO max: 50 V; Package: SOT416 (SC-75); Container: Tape reel smd |
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PDTC114EE,115 |
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NXP Semiconductors
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PDTC114 - TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-75, 3 PIN, BIP General Purpose Small Signal |
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PDTC114EEF |
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Philips Semiconductors
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NPN Resistor-Equipped Transistor, R1 = 10 kohm, R2 = 10 kohm |
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PDTC114EEF |
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Philips Semiconductors
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NPN resistor-equipped transistor |
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PDTC114EEFTR |
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Philips Semiconductors
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NPN resistor-equipped transistor |
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PDTC114EET/R |
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NXP Semiconductors
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NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhm - Complement: PDTA114EE ; hFE max:>30 ; hFE min: 30 ; IO max: 100 mA; Input resistor: 10 kOhm; Polarity: NPN ; Ptot max: 150 mW; Resistor ratio: 1 ; VCEO max: 50 V |
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PDTC114EETR |
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Philips Semiconductors
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NPN resistor-equipped transistor |
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PDTC114EK |
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NXP Semiconductors
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PDTC114EK - NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhm - Complement: PDTA114EK ; hFE max:>30 ; hFE min: 30 ; IO max: 100 mA; Input resistor: 10 kOhm; Polarity: NPN ; Ptot max: 250 mW; Resistor ratio: 1 ; VCEO max: 50 V |
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PDTC114EK |
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Philips Semiconductors
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NPN Resistor-Equipped Transistor, R1 = 10 kohm, R2 = 10 kohm |
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PDTC114EK |
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Philips Semiconductors
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NPN resistor-equipped transistor |
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PDTC114EK,115 |
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Philips Semiconductors
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Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 250MW SMT3 |
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PDTC114EK,135 |
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Philips Semiconductors
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Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 250MW SMT3 |
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PDTC114EKT4 |
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Philips Semiconductors
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NPN resistor-equipped transistor |
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PDTC114EKT/R |
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NXP Semiconductors
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NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhm - Complement: PDTA114EK ; hFE max:>30 ; hFE min: 30 ; IO max: 100 mA; Input resistor: 10 kOhm; Polarity: NPN ; Ptot max: 250 mW; Resistor ratio: 1 ; VCEO max: 50 V |
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PDTC114EM |
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NXP Semiconductors
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PDTC114EM - NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhm |
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PDTC114EM |
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Philips Semiconductors
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NPN Resistor-Equipped Transistor, R1 = 10 kohm, R2 = 10 kohm |
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PDTC114EM |
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Philips Semiconductors
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PDTC114E series, NPN resistor-equipped transistors, R1 = 10 kOhm, R2 = 10 kOhm |
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