PDTC114E Search Results
PDTC114E Datasheets (70)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PDTC114EE | NXP Semiconductors | PDTC114EE - NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhm - Complement: PDTA114EE ; hFE max:>30 ; hFE min: 30 ; IO max: 100 mA; Input resistor: 10 kOhm; Polarity: NPN ; Ptot max: 150 mW; Resistor ratio: 1 ; VCEO max: 50 V | Original | 730.96KB | 17 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PDTC114EE | Philips Semiconductors | NPN Resistor-Equipped Transistor, R1 = 10 kohm, R2 = 10 kohm | Original | 82.93KB | 16 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PDTC114EE | Philips Semiconductors | NPN resistor-equipped transistor | Original | 54.47KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PDTC114EE,115 | NXP Semiconductors | NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhm - Complement: PDTA114EE ; hFE max:>30 ; hFE min: 30 ; IO max: 100 mA; Input resistor: 10 kOhm; Polarity: NPN ; Ptot max: 150 mW; Resistor ratio: 1 ; VCEO max: 50 V; Package: SOT416 (SC-75); Container: Tape reel smd | Original | 100.88KB | 14 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PDTC114EE,115 | NXP Semiconductors | PDTC114 - TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-75, 3 PIN, BIP General Purpose Small Signal | Original | 730.96KB | 17 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PDTC114EEF | Philips Semiconductors | NPN Resistor-Equipped Transistor, R1 = 10 kohm, R2 = 10 kohm | Original | 82.93KB | 16 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PDTC114EEF | Philips Semiconductors | NPN resistor-equipped transistor | Original | 51.2KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PDTC114EEFTR | Philips Semiconductors | NPN resistor-equipped transistor | Original | 54.02KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PDTC114EET/R | NXP Semiconductors | NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhm - Complement: PDTA114EE ; hFE max:>30 ; hFE min: 30 ; IO max: 100 mA; Input resistor: 10 kOhm; Polarity: NPN ; Ptot max: 150 mW; Resistor ratio: 1 ; VCEO max: 50 V | Original | 100.88KB | 14 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PDTC114EETR | Philips Semiconductors | NPN resistor-equipped transistor | Original | 54.46KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PDTC114EK | NXP Semiconductors | PDTC114EK - NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhm - Complement: PDTA114EK ; hFE max:>30 ; hFE min: 30 ; IO max: 100 mA; Input resistor: 10 kOhm; Polarity: NPN ; Ptot max: 250 mW; Resistor ratio: 1 ; VCEO max: 50 V | Original | 730.96KB | 17 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PDTC114EK | Philips Semiconductors | NPN Resistor-Equipped Transistor, R1 = 10 kohm, R2 = 10 kohm | Original | 82.93KB | 16 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PDTC114EK | Philips Semiconductors | NPN resistor-equipped transistor | Original | 55.53KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PDTC114EK,115 | Philips Semiconductors | Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 250MW SMT3 | Original | 14 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PDTC114EK,135 | Philips Semiconductors | Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 250MW SMT3 | Original | 14 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PDTC114EKT4 | Philips Semiconductors | NPN resistor-equipped transistor | Original | 55.53KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PDTC114EKT/R | NXP Semiconductors | NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhm - Complement: PDTA114EK ; hFE max:>30 ; hFE min: 30 ; IO max: 100 mA; Input resistor: 10 kOhm; Polarity: NPN ; Ptot max: 250 mW; Resistor ratio: 1 ; VCEO max: 50 V | Original | 100.88KB | 14 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PDTC114EM | NXP Semiconductors | PDTC114EM - NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhm | Original | 730.96KB | 17 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PDTC114EM | Philips Semiconductors | NPN Resistor-Equipped Transistor, R1 = 10 kohm, R2 = 10 kohm | Original | 82.93KB | 16 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PDTC114EM | Philips Semiconductors | PDTC114E series, NPN resistor-equipped transistors, R1 = 10 kOhm, R2 = 10 kOhm | Original | 85.69KB | 14 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PDTC114E Price and Stock
NXP Semiconductors PDTC114ET/YARPDTC114ET/YAR |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
PDTC114ET/YAR | 2,632,500 | 9,260 |
|
Buy Now | ||||||
| PDTC114ET/YAR | 18,000 | 9,260 |
|
Buy Now | |||||||
|
PDTC114ET/YAR | 2,650,500 | 1 |
|
Buy Now | ||||||
Nexperia PDTC114ET,215Trans Digital BJT NPN 50V 0.1A 250mW 3-Pin SOT-23 T/R |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
PDTC114ET,215 | 1,665,000 | 6,000 |
|
Buy Now | ||||||
| PDTC114ET,215 | 336,000 | 6,000 |
|
Buy Now | |||||||
|
PDTC114ET,215 | Tape & Reel | 117,000 | 3,000 |
|
Buy Now | |||||
|
PDTC114ET,215 | Tape & Reel | 322 | 100 |
|
Buy Now | |||||
| PDTC114ET,215 | Cut Tape | 322 | 1 |
|
Buy Now | ||||||
| PDTC114ET,215 | Tape & Reel | 3,000 |
|
Buy Now | |||||||
|
PDTC114ET,215 | 3,095 | 1 |
|
Buy Now | ||||||
|
PDTC114ET,215 | 3,649 |
|
Buy Now | |||||||
| PDTC114ET,215 | 3,649 |
|
Buy Now | ||||||||
| PDTC114ET,215 | 3,271 |
|
Buy Now | ||||||||
| PDTC114ET,215 | 3,271 |
|
Buy Now | ||||||||
|
PDTC114ET,215 | 179,980 | 1 |
|
Buy Now | ||||||
|
PDTC114ET,215 | 30 Weeks | 60,000 |
|
Buy Now | ||||||
|
PDTC114ET,215 | 32 Weeks | 3,000 |
|
Get Quote | ||||||
|
PDTC114ET,215 | 6,000 | 3,000 |
|
Buy Now | ||||||
Philips Semiconductors PDTC114EM,315PDTC114EM,315 |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
PDTC114EM,315 | 1,370,000 | 5,629 |
|
Buy Now | ||||||
|
PDTC114EM,315 | 1,371,780 | 1 |
|
Buy Now | ||||||
Philips Semiconductors PDTC114EK,115PDTC114EK,115 |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
PDTC114EK,115 | 273,000 | 4,038 |
|
Buy Now | ||||||
|
PDTC114EK,115 | 273,000 | 1 |
|
Buy Now | ||||||
Nexperia PDTC114ET-QRTrans Digital BJT NPN 50V 0.1A 250mW 3-Pin SOT-23 T/R Automotive AEC-Q101 |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
PDTC114ET-QR | 213,000 | 6,000 |
|
Buy Now | ||||||
| PDTC114ET-QR | 15,000 | 12,876 |
|
Buy Now | |||||||
|
PDTC114ET-QR | 15,000 | 1 |
|
Buy Now | ||||||
|
PDTC114ET-QR | 8,980 | 1 |
|
Buy Now | ||||||
|
PDTC114ET-QR | 6,000 |
|
Get Quote | |||||||
|
PDTC114ET-QR | 30 Weeks | 51,000 |
|
Buy Now | ||||||
|
PDTC114ET-QR | 822,000 | 32 Weeks | 3,000 |
|
Buy Now | |||||
|
PDTC114ET-QR | 93,000 | 3,000 |
|
Buy Now | ||||||
|
PDTC114ET-QR | 12,356 |
|
Get Quote | |||||||
|
PDTC114ET-QR | 150,000 |
|
Buy Now | |||||||
PDTC114E Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
PDTC114EU
Abstract: PDTA114EU PDTA114E
|
Original |
m3d102pdtc114eumam134ot323+4 | |
PDTC114Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D114 PDTC114EK NPN resistor-equipped transistor Product specification Supersedes data of 1997 Jul 04 File under Discrete Semiconductors, SC04 1998 May 19 Philips Semiconductors Product specification NPN resistor-equipped transistor |
Original |
m3d114pdtc114eksc-59pdta114ek+4 | |
|
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D088 PDTC114ET NPN resistor-equipped transistor Product specification Supersedes data of 1998 May 19 1998 Nov 26 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114ET FEATURES |
Original |
m3d088pdtc114etpdta114etmga893+3 | |
|
Contextual Info: 83B PDTC114EMB SO T8 NPN resistor-equipped transistor; R1 = 10 k , R2 = 10 k Rev. 1 — 21 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. |
Original |
pdtc114embdfn1006b-3ot883bpdta114emb+1 | |
transistor t09
Abstract: PDTC114EU
|
OCR Scan |
pdtc114euot323pdta114eutransistor t09 | |
transistor p16
Abstract: pdtc114et
|
OCR Scan |
pdtc114etpdta114ettransistor p16 | |
TRANSISTOR SMD MARKING CODE rd
Abstract: TRANSISTOR SMD MARKING CODE SP marking code UL SMD Transistor SMD TRANSISTOR MARKING DE TRANSISTOR SMD CODE PACKAGE SOT23 PDTA114EEF PDTC114EEF SC-89 SMD transistor MARKING CODE 213
|
Original |
m3d425pdtc114eefmam412sc-89+9 | |
marking code 10 sot23
Abstract: PDTC114ET PDTA114ET
|
Original |
m3d088pdtc114etmam097sca63+3 | |
PDTA114EK
Abstract: PDTC114EK
|
Original |
m3d114pdtc114ekmam284sc-59+3 | |
PDTC114EU,115Contextual Info: PDTC114E series NPN resistor-equipped transistors; R1 = 10 k, R2 = 10 k Rev. 12 — 21 December 2011 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET family in small Surface-Mounted Device (SMD) plastic packages. |
Original |
pdtc114epdtc114eeot416sc-75+7 | |
TC114E
Abstract: PDTC114ES PDTC114EE PDTC114EEF PDTC114EK PDTC114EM PDTC114ET PDTC114EU SC-75 SC-89
|
Original |
pdtc114er75/10/pp14tc114epdtc114es+8 | |
PDTC114EM
Abstract: PDTC114E Series
|
Original |
pdtc114epdtc114eepdtc114empdtc114et+7 | |
TC114E
Abstract: PDTC114ES PDTC114EE PDTC114EEF PDTC114EK PDTC114EM PDTC114ET PDTC114EU SC-75 SC-89
|
Original |
pdtc114esca76r75/10/pp14tc114e+9 | |
transistor B 892
Abstract: PDTC114EE
|
OCR Scan |
pdtc114eesc-75pdta114eetransistor b 892 | |
|
|
|||
PDTC114ES
Abstract: PDTA114ES
|
Original |
m3d173pdtc114esmam364sca60+2 | |
PDTC114EE
Abstract: PDTA114EE SC-75
|
Original |
m3d173pdtc114ee115002/00/04/pp8pdta114ee+1 | |
T09 marking
Abstract: T09 sot323
|
Original |
m3d102pdtc114euot323pdta114eu+5 | |
vces
Abstract: PDTC114ES
|
Original |
m3d186pdtc114espdta114esmgl136+4 | |
PDTC114EE
Abstract: 04833 04-833
|
Original |
m3d173pdtc114eesc-75pdta114ee+6 | |
PDTC114ES
Abstract: PDTA114ES
|
OCR Scan |
pdtc114espdta114es | |
SMD transistor MARKING CODE 43
Abstract: TRANSISTOR SMD MARKING CODE A1 TRANSISTOR SMD MARKING CODE 42 SMD Transistor A1 TC114E smd TRANSISTOR code marking 36 smd TRANSISTOR code marking 013 Transistor SMD marking code NV smd transistor 023 TRANSISTOR SMD MARKING CODE X D
|
Original |
pdtc114eresistor-equippdtc114eepdtc114eupdtc114eef+10 | |
transistor w 04 59Contextual Info: Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114EK FEATURES • Built-in bias resistors R1 and R2 typ. 10 k n each • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space |
OCR Scan |
pdtc114eksc-59pdta114ektransistor w 04 59 | |
t8 smd transistorContextual Info: 83B PDTC114EMB SO T8 NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ Rev. 1 — 21 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. |
Original |
pdtc114embdfn1006b-3ot883bpdta114emb+2 | |
339 marking code SMD transistorContextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC114EEF NPN resistor-equipped transistor Preliminary specification 1998 Nov 11 Philips Semiconductors Preliminary specification NPN resistor-equipped transistor PDTC114EEF FEATURES • Power dissipation comparable to |
Original |
m3d425pdtc114eefsc-89ot490+4 | |