MA170 Search Results

SS321

Abstract: SE708 D07 15 SS322 SS337 DT230A HPIXP2350ADT DZ800 MA1703 MA1704
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES Continued U BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf @ 25°C Max. M ax. @ V r (V) 30 20 100 Co @ lF(mA) (V) 50 1 .00 30 1.00 Package O utline No. S p e cificatio n Sh eet No. @ OV trr (pif) (nsec) Package

SS321 equivalent

Abstract: DIODE 1N9148 1N4307 1N4532 DIODE 1N3605 SE708 2N2222 chip 2N2369 transistor DZ800 MA1703
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES Continued U @ 25°C BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf Max. Max. @ Vr(V) 30 20 100 Co @ OV @ lF(mA) (V) 1.00 1.00 (pif) (nsec) Package Type trr Package Outline No. Specification Sheet No. 50 2 4

MA2B171

Abstract: MA170 MA171 MA2B170
Contextual Info: Switching Diodes MA2B170, MA2B171 MA170, MA171 Silicon epitaxial planar type Unit : mm For high-speed switching circuits • Large forward current IF(AV) • High switching speed • Small terminal capacitance, Ct 24 min. • Absolute Maximum Ratings Ta = 25°C

A114D

Abstract: A114F SE708 DT230B DT230F STB-568 GER4007 a114n DZ800 MA1703
Contextual Info: SILICON S IG N A L DIODES 100 M A T Y P E S Continued U BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf @ 25°C Max. M ax. @ V r (V) 30 20 100 Co @ lF(mA) (V) 50 1 .00 30 1.00 Package O utline No. S p e cificatio n Sh eet No. @ OV trr (pif) (nsec)

MA2B171

Contextual Info: Switching Diodes MA2B170 MA170 , MA2B171 (MA171) Silicon epitaxial planar type For high-speed switching circuits Unit: mm • Features 24 min. ■ Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Rating Unit VR 40 V MA2B170 Repetitive peak reverse voltage

MA2B171

Abstract: MA170 MA171 MA2B170 SC-40
Contextual Info: Switching Diodes MA2B170 MA170 , MA2B171 (MA171) Silicon epitaxial planar type For high-speed switching circuits Unit: mm • Features 24 min. ■ Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Rating Unit VR 40 V MA2B170 MA2B171 Repetitive peak

MA2B171

Abstract: MA170 MA171 MA2B170 SC-40
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA2B170 (MA170), MA2B171 (MA171) Silicon epitaxial planar type For high-speed switching circuits M Di ain sc te on na tin nc ue e/ d Unit: mm • Features 24 min. ■ Absolute Maximum Ratings Ta = 25°C

MA2B171

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA2B170 (MA170), MA2B171 (MA171) Silicon epitaxial planar type For high-speed switching circuits Unit: mm • Features 24 min. ■ Absolute Maximum Ratings Ta = 25°C Parameter

2N601

Abstract: TA761 asy26 2n6365 AC188K Low-Power Germanium PNP 2N3371 2N3280 2N369 MXO55GA-4C-20.25M
Contextual Info: LOW-POWER GERMANIUM PNP Item Number Part Number 10 15 20 25 30 35 40 2S8186 2Nl129 TA81 TA81 TA81 2S8486 MA1705 MA1705 AC188K AC188K AC188K 2N3371 ACl15 AC154 AC156 ACl13 ASY82 ASY83 TI384 UPI404 2N310 2N215 2N369 2N499 TA761 TA761 TA761 2N2095 2N2964 2N2965

MA2B171

Abstract: MA2B170 MA170 MA171
Contextual Info: Switching Diodes MA2B170, MA2B171 MA170, MA171 Silicon epitaxial planar type Unit : mm For high-speed switching circuits φ 0.56 max. 1 • Features 4.5 max. • Large forward current IF(AV) • High switching speed • Small terminal capacitance, Ct 24 min.

MA171

Abstract: MA170
Contextual Info: 2SK1478 Switching Diodes MA170, MA171 Silicon epitaxial planer type For high speed switching circuits Unit : mm φ0.56 max. 1 • Features ● High switching speed ● Small capacity between pins, Ct 24 min. Large forward current IF AV 4.5 max. ● COLORED BAND

marking code 62z

Abstract: philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent
Contextual Info: 2001.05 Summary Application Example ANT The HVD141/142 features very small capacitance and on- resistance. These superior characteristics can provide isolation for the transmitting and receiving antenna switch sections and improve the insertion loss. TX RX

rtl8139b

Abstract: RTL8129 RTL8139BL Realtek RTL8029 AS realtek rtl8129 realtek uwb mA759 RTL8029 realtek rtl8029 realtek rtl8139 programming
Contextual Info: RTL8139B L Preliminary REALTEK SINGLE CHIP FAST ETHERNET CONTROLLER WITH POWER MANAGEMENT RTL8139B(L) 1. Features: l 128 pins QFP/LQFP environment only. Both need 5-volt l Integrated Fast Ethernet MAC, Physical chip working voltage as power source. l and transceiver in one chip

rtl8139cl

Abstract: RTL8139CL-LF realtek rtl8139 programming RTL8139C RTL8139A RTL8139C-LF 007CH REALTEK 8129 FLY mobile MOTHERBOARD CIRCUIT diagram 003EH-003FH
Contextual Info: RTL8139C RTL8139C-LF RTL8139CL RTL8139CL-LF 3.3V SINGLE-CHIP FAST ETHERNET CONTROLLER WITH POWER MANAGEMENT DATASHEET Rev. 1.6 29 December 2005 Track ID: JATR-1076-21 Realtek Semiconductor Corp. No. 2, Innovation Road II, Hsinchu Science Park, Hsinchu 300, Taiwan

RTL8139 BootROM

Abstract: RTL8139 reference design realtek rtl8139 programming RTL8139 Circuit RTL8139C REV15 RTL8139CL realtek rtl8139 RTL8129 RTL8139A
Contextual Info: RTL8139C L + REALTEK 3.3V SINGLE CHIP FAST ETHERNET CONTROLLER WITH POWER MANAGEMENT RTL8139C(L)+ 6.32 Transmit Priority Polling Register (TPPoll) . 38 6.33 C+ Command Register (C+CR) . 38 6.34 Receive Descriptor Start Address Register (RDSAR). 39

Contextual Info: Diodes • Silicon Diodes Switching Vr Type No. (V ) If Ir * Ir (AV) max. (nA) (mA) CD max. *typ. (pF) trr max. (ns) Package Vr Type No. (V ) N o. If Ir * Ir (av) max. (nA) (mA) Co max. *typ. trr max. (ns) Package No. (P F ) MA111 « 80 100 100 1.2 3 S Mini (2 pins)

2N25

Abstract: ge 142 2SB450 GET113 2SA244 AC139/AC142 2SB450A ASY82 SFT121 SFT142
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

in4151

Abstract: 1N4532 1N4148 1N4149 1N4151 1N4152 1N914 1N914A 1N914B 1N916
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES Part Number 1N914 1N 914A 1N 914B BV @ 100/1A Min. V I r @ 2 5 °C Max. (ri A) @ V r (V ) V f Max. (V ) @ I f (m A ) Co @ DV (pf) trr (77S E C ) Package Outline Package Outline Number 100 100 25 30 1.00 10 4 25 20 1.00

Low-Power Germanium PNP

Abstract: 2N1377 2n1375 TR526 2N524A 2N3428 2n525a diode GG 64 2N1432 AC123
Contextual Info: LOW-POWER GERMANIUM PNP Item Number Part Number 10 15 20 >= 2G524 2Nl057 2N1371 2N1375 ACY16 TRS50 TR650 TR650 2N1997 2N597 2N2382 2N524A TR43A TR43A TR43A 2G525 2G525 2G525 CK658 CKS5C 30 CK65 CK65A 2N1451 TR43 TR43 TR43 2N1447 2N526 ~~:~~ 35 40 TR461 2N237

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

JE1100

Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices

varactor 36z

Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r

DIODO 1N4148

Abstract: diodo 1N914 1N4532 2 935 diodo in4727 1N4727 1N4148 1N4149 DZ806 1N4152
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES Part Number 1N 914 1N 914A 1N 9 1 4 B BV @ 100/1A Min. V I r @ 25°C Max. (ri A) @ V r (V) V f Max. (V) @ I f (m A) Co @ DV (pf) trr (77S E C ) Package Outline Package Outline Num ber 100 100 25 30 1.00 10 4 25 20 1.00

1n4148 D035

Abstract: DHD806 DHD800 1N916 JANTX JANTX 1N916 1N4532 DE104 DZ805 IN4305 1N4148
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES Part Number 1N914 1N 914A 1N 914B BV @ 100/1A Min. V I r @ 2 5 °C Max. (ri A) @ V r (V) V f Max. (V ) @ I f (m A ) Co @ DV (pf) trr (77S E C ) Package Outline Package Outline Number 100 100 25 30 1.00 10 4 25 20 1.00