LC50MA Search Results

2N5417

Abstract: A 14U UD3008 2N5292 BD263 BD264A CI44 transistor t05 BC412 KIS434
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

BC507

Abstract: l18b 5.1 channel producing ic BC180 bc507 transistor TIS107 ME60 PET1075 PET1075A PET6003
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

BF125

Abstract: PET8002 l18b GW 9n BFW74 BFW75 BFW76 BFX53 T046 ML101A
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

Contextual Info: 2N3905 2N3906 PNP SILICON PLANAR EPITAXIAL TRANSI STOBS THE 2N3905 AND 2N3906 ABE PNP SILICON PLANAR EPITAXIAL TRANSISTORS. THEY ARE INTENDED FOR GENERAL PURPOSE, SATUHATEDSWITCHING AND AMPLIFIER APPLICATIONS. THEY ARE COMPLIMENTARY TO 2N3903 AND 2N3904 RESPECTIVELY.

TF-450

Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR Z T X 10 4 7 A ISSUE 3 -JANUARY 1995_ _ FEATURES * Very Low Saturation Voltage * High Gain * 4 Amp Continuous Current APPLICATIONS * DC-DC Convertors * Power Management - Supply Switching

Contextual Info: SM-8 COMPLEMENTARY M EDIUM POWER HIGH GAIN TRANSISTORS ZDT6718 ISSUE 1 - NOVEMBER 1995 - ci c r _U Bi Ct C L =□ Ei NPN C» 1 1 ZD b2 c2 l 1 ZO e2 pnp PARTMARKING DETAIL- T6718 ABSOLUTE MAXIMUM RATINGS. PARAMETER SY M B O L NPN

Contextual Info: SuperSOT SOT23 NPN SILICON POWER SWITCHING TRANSISTORS FMMT617 FMMT618 FMMT619 FMMT624 FMMT625 ISS U E 3 - N O V EM B ER 1995_ FEATURES * 625mW POWER DISSIPATIO N * * * * * lc C O N T 3 A 12A Peak Pulse Current Excellent HF£ Characteristics Up To 12A (pulsed)

2TX750

Abstract: VCS-60V ZTX750 ZTX751 ZTX752 ZTX753
Contextual Info: PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IS S U E 2 - J U L Y 94_ FEATURES * 60 Volt V,CEO 2 A m p continuous current Lo w saturation voltage P ,o t = 1 W a t t ABSOLUTE M A X IM U M RATINGS. ZTX750 ZTX751 UNIT V CB0 -60 -80 V

transistor C 245 b

Abstract: ZTX1053A
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1053A ISSU E 2 - JANUARY 1995_ — — — — — — — - ABSOLUTE M A X IM U M RATINGS. PARAMETER SYM BO L Collector-Base Voltage ZT X 1 05 3A U N IT v CBO 150 V Coliector-Emitter Voltage

2n2709

Abstract: C621 2N4411 c643 OC44 400M BSV55AP BSV55P T072 GM300
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

BC138 TRANSISTOR

Abstract: 2N4043 ME2001 2N1020 2N3523 2N4042 2N4241 BC138 bc143 TLO 61
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

BAL0105-100

Abstract: J3315 Scans-00115697
Contextual Info: 0182998 ACRIAN GENERAL INC ”t? DE [ □ l A S ' H Ò DD01BE1 1 |~5 A\m& 0105-100 DESCRIPTION 100 WATTS - 28 VOLTS 100-500 MHz The 0105-100 is an internally matched, balanced transistor designed for broadband applications. It may be operated Class A, AB or C and is an improved

tea 1601 t

Abstract: l18b PT23 tea 1601 UD3008 2N2719 ME2001
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

2N2907AUB

Contextual Info: 61089 2N2907A U B S U R F A C E M O U N T PN P G E N E R A L P U R P O S E T R A N S IS T O R JMi~ OPTOELECTRONIC PRODUCTS DIVISION Features • • • • • Ceramic surface mount package Miniature package to minimize circuit board area Hermetically sealed

ztx658

Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ZTX658 ISSU E 1 - APRIL 94_ FEATURES * 400 Volt V CE0 * 0.5 A m p continuous current * Ptot=1W att A P P L IC A T IO N S * Telephone dialler circuits E-Lina T 092 Compatible

P1y transistor

Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 -JANUARY 1995_ ' - ZTX1056A FEATURES * V c e o =1 6 0 V * 3 A m p C o n t in u o u s Current * 6 A m p P u lse Current * L o w Sa tu ra tio n V olta ge ABSOLUTE MAXIM UM RATINGS.

C621

Abstract: SD5013 2N551 transistor c640 npn Transistors 2n551
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

18200T

Abstract: germanium low power 150mW 460MSA 2N2097A C621 LM 18200T P1004 RT1116 2SC814 transistor C633
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

Contextual Info: 61083 2N2907AUA SURFACE MOUNT PNP GENERAL PURPOSE TRANSISTOR OPTOELECTRONIC PRODUCTS DIVISION 0.225 5.72 0.215 (5.46) Features • • • • jns*- Ceramic surface mount package Miniature package to minimize circuit board area Hermetically sealed Mil-S-19500 screening available

Contextual Info: MS- 2N2907AUA SURFACE MOUNT PNP GENERAL PURPOSE TRANSISTOR 61083 OPTOELECTRONIC PRODUCTS DIVISION Features — Ceramic surface mount package Miniature package to minimize circuit board area Hermetically sealed Mil-S-19500 screening available PIN 1 IDENTIFIER

Contextual Info: 61095 Features • • • • jn a- 2N2907A GENERAL PURPOSE PNP TRANSISTOR OPTOELECTRONIC PRODUCTS DIVISION 3 Leads - Dia 0 021 0.53 0.016(0.41) 0.210 (5.33) 0.170(4.32) TO-18 style package Rugged package - able to withstand high acceleration load Hermetically sealed

transistor marking 1y

Abstract: HB573
Contextual Info: KST3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA-25t: Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature

2n4401

Abstract: TRANSISTOR 2N 4401 "cb it" 4400 transistor transistor 4400
Contextual Info: 2N4400/4401 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: Veto=40V • Collector Dissipation: pc max =625mW TO -92 ABSOLUTE MAXIMUM RATINGS (T,=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage

Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 -FEBRUARY 95_ ZTX1051A _ _ _ FEATURES * Bcev=150V * Very Low Saturation Voltage * High Gain * Inherently Low Noise APPLICATIONS * Em ergency Lighting * Low Noise Audio