LB 137 TRANSISTOR Search Results

ITB68

Contextual Info: S E M IT R O N I N D U S T R I E S LT D 4 3E J> m B 137&&1 O O O O lb ? 4 E3 SLCB L7SERIES Hermetically Sealed Metal Packaged •Surge Suppressor Diode Voltage Range 5VI to 200 Volts 25 Watt Steady State ■1500 Watt Peak Power APPLICATIONS ELECTRICAL CHARACTERISTICS

ESM1350

Abstract: FIR31 r2 137 sm 889 ESM135 ESM 470
Contextual Info: ESM135 ESM 137 NPN S ILIC O N TR A N S IS TO R S . E P IT A X IA L BASE TRANSISTORS S ILIC IU M NPN, BASE EPITAXIEE ESM 139 Compl. of ESM 136, ESM 138, ESM 140 P R E L IM IN A R Y D A T A N OTICE PR ELIM IN A IR E - LF large signal power amplification Am plification BF grands signaux de puissance

BDI35

Abstract: BDI37 LB 137 transistor transistor BD 139 transistor BD139 N BD 139 N Transistor Bd 140 bd 135 BD 139 transistor BD139
Contextual Info: MOTOROLA Order this document by BD135/D SEMICONDUCTOR TECHNICAL DATA BD135 BD137 BD139 Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • • DC Current Gain — hpE = 40 Min @ Iq = 0.15 Adc

Contextual Info: FMM T3905 FMM T3906 SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS PARTMARKING DETAILS: FMMT3905 - 2W FMMT3906 - 2A ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-Base Voltage Collector-Emltter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb = 25°C

BD139

Abstract: b*137 bd139 Complement power transistor bd137 power transistor bd139 transistor bd137 BD137 bd137 Transistor BD135 BD136
Contextual Info: KSD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 136 and BD140 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic C ollector Base Voltage Sym bol : BD135 VcBO : BD137 : BD139 C ollector E m itter Voltage : BD135

D137 transistor

Abstract: D135 BD139B BD139 bd137b BD136
Contextual Info: BD135/137/139 NPN EPITAXIAL SILICO N TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-126 • Complement to BD136, B D 138 and B D 140 respectively ABSO LUTE MAXIMUM RATINGS Symbol Characteristic Collector B ase Voltage Collector Emitter Voltage

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2507AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers and com puter monitors.

bo 139

Abstract: bd 1382 semiconductor bo 137 BD 266 S BD 139 N bd 317 BD139.6 TR bd 139 BD139 NPN BD 139 140
Contextual Info: MOTORCL A SC 1EE D § L3b72S4 0GflM703 T | XSTRS/R F BD135,-6,-10,-16 BD137,-6,-10,-16 BD139,-6,-10,-16 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLA STIC M EDIUM POW ER SILIC O N NPN TR A N SISTO R 1.S AMPERE POWER TRANSISTOR . . . designed for use as audio amplifiers and drivers utilizing

Contextual Info: 4ÔE D 0 1 3 3 1 0 7 GGDD42D 7 b l H S N L B G137 chip family The G 137 chip family is an NPN bipolar multi-epitaxial planar transistor intended for applications requiring fast switching, low saturation power devices. SEMELAB LT]> 'î- 3 5 'O l • UP TO 35 AMPS

transistor 10 s125

Abstract: t4sb BULD138 S125
Contextual Info: SGS-THOMSON IM0m ELEOT@I]O<£l B U L D 138 HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR PRELIMINARY DATA . . . . SGS-THOMSON PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION

2sb1243 TRANSISTOR

Contextual Info: 2SB1243 Transistor, PNP Features Dimensions Units : mm • available in ATV TV2 package • low collector saturation voltage, typically VCE(sat) = -0.5 V at • complementary pair with 2SD1864 2SB1243 (ATV TV2) lc/lB = -2 A /-0 .2A Applications • medium power amplifier

2N2905

Abstract: 2n2905a 2N2905 2N2219 transistor 2N2905 2N2905 NPN transistor
Contextual Info: Philips Semiconductors Product specification PNP switching transistors FEATURES 2N2905; 2N2905A PINNING • High current max. 600 mA PIN • Low voltage (max. 60 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector, connected to case • High-speed switching

VCS-60V

Abstract: KSA708 KSC1008
Contextual Info: SAMSUNG SEMICONDUCTOR INC 14E D KSC1008 | 7*ib4].42 G O O b ö b b 4 | T -^ 9 - NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING • • • • Complement to KSA708 y ig h Collector-Base Voltage Vcso=80V Collector Current lc =700mA

lem HA

Abstract: transistor bu2520d BU2520D
Contextual Info: N AMER PHILI PS /D IS CRE TE blE D • LbSBTBl 002fl37b 7SM M A P X Phjljps^Semiconductorg_ Productspe Silicon diffused power transistor BU2520D GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic

BU2506DX

Contextual Info: Product specification Philips Semiconductors Silicon Diffused Power Transistor BU2506DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television

138b

Abstract: BD139 136B BD136 bd136 N
Contextual Info: • 7^537 0056363 5 ■ SCS-THOM SON M O lim iC T « ! S G S-TH0MS0N ^ 3 3 - H _ BD136 B D138-BD140 3QE D MEDIUM POWER GENERAL PURPOSE TRANSISTORS DESCRIPTION The BD136, BD138, BD140 are silicon epitaxial pla­ nar PNP transistors in Jedec TO-126 plastic

2sd2012 transistor

Contextual Info: TOSHIBA 2SD2012 Transistor Silicon NPN Triple Diffused Type Audio Frequency Power Amplifier F e a tu re s • High DC Current Gain : 100 Min. • Low Saturation Voltage ~ ^CE (Satj = 1.0V (Max.) (Ic = 2A, lB = 0.2A) • High Power Dissipation - Pc = 25W (Tc = 25~C )

bf 233

Abstract: BF233 BF234 REED RELAY 15003 bf 137
Contextual Info: BF 233 BF 234 S I L I C O N P L A N A R NPN AM MIXER OSCILLATOR, AM-FM IF AMPLIFIER The BF233 and BF 234 are silico n planar epitaxial NPN transistors in T O -18 epoxy package. They are intended fo r use in AM m ix e r/o s c illa to r stages, IF am plifiers for

Contextual Info: BD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD136, BD 138 and BD140 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic C ollector Base Voltage Sym bol : BD135 Rating Unit 45 V : BD137

BD139 N

Abstract: TRANSISTOR TC 137 BD135 LB 137 transistor power transistor bd135 BD139 BD139 NPN transistor bd135 N BD135 NPN transistor TRANSISTOR NPN BD139
Contextual Info: BD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD136, BD 138 and BD140 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol C ollector Base Voltage :B D 1 3 5 : BD137 : BD139 C ollector E m itter V o lta g e : BD135

bu808

Abstract: bu808 transistor 139 NPN transistor TO-3 Transistor AC 141 TO3 philips transistor bu808 DBU808
Contextual Info: r[ N AMER PHILIPS/DISCRETE ^53=131I UQDlâbS? 0 • t SSE D I BU808 T -3 3 -L 5 L SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed, glass-passivated npn switching transistor in a TO-3 envelope, intended fór use in three-phase AC motor control systems.

BSS65

Abstract: BSS65R
Contextual Info: PLXSSEY SEMICOND/DISCRETE 03 PNP silicon planar high speed switching transistor DE I 722DS33 ODOLbSH 4 BSS65 , T - 3 7 -// A B S O L U T E M A X I M U M R A T IN G S Param eter Sy m b o l BSS65 U nit V CBO -1 2 V C o lle cto r-E m itte r V o lta g e V CEO

w26c

Abstract: ESM 11 thomson ESM136 15S2 25CC
Contextual Info: ESM 136 ESM 138 ESM 140 PNP SILICON TRANSISTORS EPITAXIAL BASI TRANSISTORS PNP S ILIC IU M A BASE EPITAXIEE Compì, of ESM 135, 137, 139 PRELIMINARY DATA NO TICE PR EL IM IN A IRE LF large signal power amplification Am plification BF grands signaux de puissance

LB 122

Abstract: sc 1365 MPS571 MPS571B LB122
Contextual Info: 1SE D | MOTOROLA MQ TO R C LA fc>3b72SM SC b | XSTRS/R F T -2 1 -JS "“ • SEM ICOND UCTOR TECHNICAL DATA _ MPS571 MMBR571 The RF Line N P N Silicon High Frequency Transistors LOW N O ISE HIGH RF GA IN . designed for low noise, wide dynamic range front-end amplifiers and low-noise