BSS65
Abstract: BSS65R
Contextual Info: PLXSSEY SEMICOND/DISCRETE 03 PNP silicon planar high speed switching transistor DE I 722DS33 ODOLbSH 4 BSS65 , T - 3 7 -// A B S O L U T E M A X I M U M R A T IN G S Param eter Sy m b o l BSS65 U nit V CBO -1 2 V C o lle cto r-E m itte r V o lta g e V CEO
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722ds33bss65722gs33bss65r |
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BPX25
Contextual Info: PLESSEY SEMICO ND/DISCRETE 7220533 P L E S S E Y IS SEMICOND I E|722DS33 QQQSQ1S S /DISCRETE 95D 05015 SILICON PLANAR PHOTOTRANSISTORS G E N E R A L A P P L IC A T IO N S OF F ERRAN TI P H O T O T R A N SIST O R S Alarm Systems, Process Control, Edge and Position Sensing, Optical Character Recognition, Tape
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722ds33zm100zm100/110bpx25/29+5zm110bpx25bpx29zmp31/51zmp31
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G199
Abstract: ferranti 199 G198
Contextual Info: PLESSEY S E MI CO ND / D I SC R E T E TS 7220533 PLESSEY SEMICOND/DISCRETE p Ë l? a S D S 3 3 95D 05695 ^ 3 *7 -0 ? ' Z V N 2535 N-channel enhancement mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown
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zvn2535a75s0533g-200g-201+9752ds330d0570dg-202g-203722ds33000s7d2g199ferranti 199g198
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ZVN2206B
Abstract: E195D plessey g-1
Contextual Info: PLESSEY SE MICON D/ DI SC RE TE 7220533 PLESSEY TS DE I 7S E 0 S 33 DDGSbb^ 95D 05 6 6 9 SEMICOND/DISCRETE - [“ ^ N-channel enhancement mode vertical DMOS FET 3 ^ 7 ZVN2206 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown
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zvn2206zvn2206bzvn2206ldq0sb72+6g-1747s2d5330005b73g-175e195dplessey g-1
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G-329
Abstract: ZVP3306 ZVP3306A
Contextual Info: PLESSEY SEMICOND/DISCRETE 7220533 PLESSEY TS SEMICOND/DISCRETE ZVP2220 DE I 75EDS33 ODOSflEE 1 9SD 05822 T '3 7 \ 2 5 G-324 PLESSEY SEMICOND/DISCRETE 7220533 PLESSEY TS SEMICOND/DISCRETE G-325 d F | 7S2[]S33 QOaSflES □ |~~ 95D 05 823 D PLESSEY SEMICOND/DISCRETE
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75eds33zvp2220g-324g-325+77ee0533g-3267220s33-r-31-25zvp3306g-329zvp3306a
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ZVP2110L
Abstract: ZVP2110 g291
Contextual Info: T5 PLESSEY SEMICOND/DISCRETE 7220533 PLESSEY T • C o m p a c t ge om etry • F a s t s w itc h in g sp e e d s • N o s e c o n d a ry b re a k d o w n • E x ce lle n t te m p e ratu re sta b ility • H igh in p u t im p e d a n ce • L o w cu rren t drive
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zvp2110g-290722ds33g-291+4g-292g-293zvp2110lg291
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G227
Abstract: g228
Contextual Info: PLESSEY SENICOND/DISCRETE 7220533 PLESSEY ~TS DE~| 7EE0S3B □ 0 D S 7 n S 95D SEMICOND/DISCRETE 05719 T-39-11 N-channel enhancement mode vertical DMOS FET ZVN3220 FEATURES • C o m p a c t g e o m etry • F a s t s w itc h in g sp e e d s • N o se c o n d a ry b re akd o w n
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t-39-11zvn3220zvn3220l-----------------------------t-39-11+55/zvn3220l/09/6600ds724g-226g227g228
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N-0120
Abstract: N0120
Contextual Info: PLESSEY SENICOND/DISCRETE 7220533 PLESSEY TS SEMICOND/DISCRETE DE 1 7 5 2 D 5 3 3 D D D S t m 95D 0 5 6 0 9 T - 3 ^ .^ 5 - N-channel enhancement mode vertical D M O S FET ZVN 0120 FEATU RES • Com pact geometry • Fast sw itching speeds • No secondary breakdown
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g-115722ds3300g5bl4g-116+675eg533g-1177220s33g-118n-0120n0120
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