L425 Search Results

L4256-80

Abstract: 42568 1251n GM41 gm-41
Contextual Info: Order this document by MCM414256/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA o MCM41 4256 MCM41 L4256 256K x 4 CMOS Dynamic RAM . Page Mode, The MCM41 4256 is a 1.0 K CMOS high-speed, dynamic random access memory. It is organized as 262,144 four-bit words and fabricated with CMOS silicon-gate process

Contextual Info: L4254E Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.2.3p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage90 Q Factor Min. f(co) Min. (Hz) Cut-off freq.30G P(D) Max. (W)3.5 Semiconductor MaterialSilicon Package StyleAxial-6

L4255

Abstract: 19B8 he 234 DJ42
Contextual Info: tv|su7syu 1{,w6 2/y+{3 y~w1wy3{1*23*y2 =`V]Yag gY`cYeUgheY < /62 LUgYX ib_gU[Y< 522P=> gb 92 LUgYX WheeYag < 34= +cYe cb_Y, Dafh_Ug]ba ib_gU[Y +G]a0, < 7222P=> JebgYWg]ba XY[eYY ?DH62272 < DJ42 A]_Y Hb0<L4255;95 A]_Y Hb0<@475592 MWeYj gYe`]aU_. ?DH eU]_ 1 MWeYj `bhagYX.

L4255

Abstract: c 3807
Contextual Info: tw}}s v8s zu 2|-x7 30z,|4 z*x2xz4|2+34+z3 =`V]Yag gY`cYeUgheY < /62 LUgYX ib_gU[Y< 522P=> gb 92 LUgYX WheeYag < 34= +cYe cb_Y, Dafh_Ug]ba ib_gU[Y +G]a0, < 7222P=> JebgYWg]ba XY[eYY ?DH62272 < DJ42 A]_Y Hb0<L4255;95 A]_Y Hb0<@475592 MWeYj gYe`]aU_. ?DH eU]_ 1 MWeYj `bhagYX.

8251a usart interface from z80

Abstract: UDL TM 500 f922 verilog code for 8254 timer l912 256x32 POWER MODULE TM 31 udl 500 78K3 F5S4
Contextual Info: L4E75BS DÜHBÖGb 3ÔÔ B I N E C E CB-C7, 5-VOLT 0.8-M ICRON CELL-BASED CMOS ASIC NEC NEC Electronics Inc. August 1993 Description Figure 1. Integrated HDD Solution with CBC7 Cell-Based ASIC with Embedded 78K3 MPU, Compiled SRAMs and A/D Converters CB-C7 cell-based product family is a 0.8-micron drawn

31-oq

Abstract: 7C342-25 CY7C342-35HMB 7C342-35 CY7C342 CY7C342B OQ11
Contextual Info: CY7C342 CY7C342B rif CYPRESS 128-Macrocell M AX EPLD Features Functional Description • 128 macrocells in 8 LABs • 8 dedicated inputs, 52 bidirectional I/O pins • Programmable interconnect array • 0.8-micron double-metal CMOS EPROM technology CY7C342

transistor f422

Abstract: transistor f423 f422 transistor transistor f421 BV09 F423 fet 13187 RJ4B L442 bvoe
Contextual Info: CMOS-8LCX 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS CROSSCHECK TEST SUPPORT NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family consists of ultra-high performance, sub-micron gate arrays, targeted for

CXA2053Q

Abstract: SFH- SONY
Contextual Info: SONY CXA2053Q US Audio Multiplexing Decoder Description The CXA2053Q is an 1C designed as a decoder for th e Z enith T V M u lti-c h a n n e l System and also corresponds with |2C BUS. Functions include stereo dem odulation, S A P S e p a ra te Audio Program

LY190-128064

Abstract: SSD1308Z 23/11175
Contextual Info: 力元電子（香港）有限公司 OLED 显示屏说明书 型号：LY190-128064 地址：深圳市南山區南光路 126 號鵬都大廈 B 座 1504 電話：0755-26523608 傳真：0755-86368541 郵編：518052 郵箱：jack@liyuan-elec.com 網址：www.liyuan-elec.com

Contextual Info: 力元電子（香港）有限公司 OLED 显示屏说明书 型号：LY240-096016 地址：深圳市南山區南光路 126 號鵬都大廈 B 座 1504 電話：0755-26523608 傳真：0755-86368541 郵編：518052 郵箱：jack@liyuan-elec.com 網址：www.liyuan-elec.com

l426

Abstract: S558-5999-G8 S558-5999-G9
Contextual Info: 10/100BASE-T LAN MAGNETICS Single Port Transformer Modules LM00409 • Meets all IEEE 802.3 standards including 350µH with 8mA bias • Low profile, surface mount packaging rated to 225° C peak IR reflow temperature • Operating temperature 0° to 70° C

transistor f422

Abstract: transistor f423 F422 transistor transistor f421 nec product naming rule BK-DK
Contextual Info: i O 1993 iir n r, . . NEC E le ctro n ics Inc. Prelim inary Description CMOS-8LCX 3-VOLT, 0.50-M ICRON CMOS GATE ARRAYS c ro s s c h e c k te s t s u p p o rt February 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family are ultra-high perform­

Contextual Info: y i/ iy j x iy i/ i D ual-O utput, S w itch -M o d e R eg u lato r + 5 V to ± 1 2 V o r± 1 5 V _General Description _ Features The MAX742 DC-DC converter is a controller for dual-out­ put power supplies In the 3W to 60W range. Relying on

Q8031

Abstract: ISL9504 U7500 SLG8LP436 ISL9504 macbook "board view" macbook 820-1889 c5966 U6200 PP3V42G3H
Contextual Info: 8 6 7 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 2 3 4 5 1 CK APPD M42C MLB REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE C 474680 PRODUCTION RELEASED

414256

Abstract: MCM414256P80 MCM414256-70 XEXX 414256 dram
Contextual Info: ; r . Order this docum ent by M CM414256/D MOTOROLA I SEMICONDUCTOR TECHNICAL DATA 256K x 4 CMOS Dynamic RAM MCM414256 L4256 Page Mode P PACKAGE 300 MIL PLASTIC CASE 738C The MCM414256 is a 1.0 ^ CMOS high-speed, dynamic random access memory. It is organized as 262,144 four-bit words and fabricated with CMOS silicon-gate process

L1239

Abstract: l0728 l0312 SGS L282 L0936 L11616 L9960 0x00000404 L1198 L1322
Contextual Info: Go to next Section: PCI to Local Bridge Performance Study Return to Table of Contents Using the PCI 9060 without a CPU SGS Thomson MPEG with PCI 9060 PCI 9060/MPEG AN January 14, 1996 MPEG to PCI bus Application Note _ _ _

AR1310

Abstract: AR3010 AR9102 AR1303 ms 25237-327 Telefunken TLX 22 4 G5602 MV55A rca 7646 RCA 7945
Contextual Info: 1080 Johnson Drive Buffalo Grove, IL 60089 708-459-3400 Fax 708-459-2708 _ «OHI C hicago M iniature WHERE INNOVATION COMES TO LIGHT C o m p e titiv e Cross R e fe re n c e Competitor Page

bv0T

Abstract: 658X
Contextual Info: N E C ELECTRONICS INC b7E D • b4E75S5 QQ3T701 4bD HINECE CMOS-8L 3 -V O LT, 0.50-M IC R O N cm os g a te a r r a y s ä I M t L NEC Electronics Inc. P re lim in a r y Description October 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family consists of ultra-high per­

D65806

Abstract: 9215K1
Contextual Info: tFEB i 7 1993 CMOS-8 5 VOLT, 0 .65-MICRON CMOS GATE ARRAYS NEC Electronics Inc. Prelim inary January 1993 Figure 1. Sample CMOS-8 Packages Description NEC’s 5-volt CMOS-8 family are ultra-high performance, sub-m icron gate arrays, targe te d fo r a pp lications

nec 2561 equivalent

Abstract: f bj04 TBA 931 765 floppy disk controller 78K3 L435 f305 F423 nec 2401 bg05
Contextual Info: CB-C7, 5-VOLT 0.8-MICRON CELL-BASED CMOS ASIC NEC Electronics Inc. August 1993 Description CB-C7 cell-based product family is a 0.8-micron drawn process with two- or three-layer metalization and is offered in 22 I/O pad ring step sizes. It is ideal for applications such

J18M

Abstract: itt 2222 marking code F302 L-423 d 65632 "Single-Port RAM" marking L442 em 288 NEC uPD 65658 RU4D
Contextual Info: <S *W¿ NEC C M O S -6 /6 A /6 V /6 X 1 .0 -M IC R O N C M O S G A TE A R R A Y S NEC Electronics Inc. April 1992 Description Figure 1. Sample CMOS-6/6A/6V/6X Packages NEC’s CMOS-6 gate array fam ilies CMOS-6, CMOS6A, CM OS-6V and CMOS-6X are ultra-high perform ­

Digital IC CMOS 16x1 mux

Abstract: PART NUMBERING NEC IC DECODER ic tba 810 f34 function generator 80c42 F981 IC NEC VOLTAGE COMPARATOR IC LIST 3volt inverter 765 floppy disk controller 16x1 mux
Contextual Info: b42?525 00437T3 TTT « N E C E |^ | 1^1 t w C B-C7, 3-VO LT 0.8-M IC R O N c e l l - b a s e d c m o s a s ic NEC Electronics Inc. C Preliminary Description The CB-C7,3-volt cell-based product family is intended for low power portables and battery-operated products. A

transistor f422

Abstract: transistor f423 BKDF f422 transistor B00J f422 F423 fet 13187 RJ4B ru4f
Contextual Info: N E C ELECTRONICS INC b7E D NEC NEC Electronics Inc. I b *427525 Q D 3 ci 7 n bTD « N E C E CMOS-8LCX 3-VOLT, O.5O-MICRON CMOS GATE ARRAYS CROSSCHECK TEST SUPPORT Prelim inary Description O c to b e r 1 9 9 3 Figure 1. Various CMOS-8LCX Packages N EC 's 3-volt C M O S -8L C X family consists of ultra-high

transistor 2N4

Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Contextual Info: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION