KTA12 Search Results

Contextual Info: KTA1273TL PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE TO-92L Complementary NPN type available KTC3205TL G H 1Emitter 2Collector 3Base J A Collector D 2 REF.

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTC2983D/L EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. MILLIMETERS 6 .6 0 ± 0 .2 FEATURES 6.10±0.2 • High Transition Frequency : fT=100MHz Typ. . • Complementary to KTA1225D/L 5 .0 ± 0 .2 1.10±0.2 2 .7 0 ± 0 .2

A1241

Abstract: a1241 semiconductor transistor a1241 transistor a1241 datasheet kta1241 KEC transistor kec a1241 datasheet KTA1241 kec a1241 kta124
Contextual Info: SEMICONDUCTOR KTA1241 MARKING SPECIFICATION TO-92L PACKAGE 1. Marking method Laser Marking 2. Marking No. Item Marking Description 1 Device Name A1241 KTA1241 2 Lot No. 816 98.06.23 8 Year 0 ~ 9 : 1900~1999 16 Week 16 : 16th Week 3 KEC K KEC CORP. 4 hFE Grade

transistor ktc3202

Abstract: KTC3202 KTA1270
Contextual Info: SEMICONDUCTOR KTC3202 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A Excellent hFE Linearity : hFE 2 =25(Min.) at VCE=6V, IC=400mA. Complementary to KTA1270. N E K G J D ) SYMBOL RATING UNIT

KTA1241

Abstract: transistor kta1241 transistor pnp 2V 0,5A 1W
Contextual Info: SEMICONDUCTOR KTA1241 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION. B D FEATURES A hFE=100 320 VCE=-2V, IC=-0.5A . hFE=70(Min.) (VCE=-2V, IC=-4A). P DEPTH:0.2 Low Collector Saturation Voltage. G C : VCE(sat)=-0.5V (IC=-3A, IB=-75mA).

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTA1267 e p it a x ia l p la n a r pnp t r a n s i s t o r GENERAL PURPOSE APPLICATION SWITCHING APPLICATION. FEATURES • Excellent h FE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). • Low Noise : NF=ldB(Typ.), 10dB(Max.). • Complementary to KTC3199.

transistor A1267

Abstract: A1267 a1267* transistor transistor a1267 gr A1267 transistor a1267 gr KTA1267-Y A1267 Y A-1267 KTA1267GR
Contextual Info: MCC TM Micro Commercial Components KTA1267-O KTA1267-Y KTA1267-GR
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • Excellent hFE Linearity: hFE 0.1mA /h FE (2.0mA)=0.95(Typ)

Contextual Info: Transistors SMD Type PNP Silicon Epitaxial Transistor KTA1273 SOT-89 • Features Unit:mm 1.50 ±0.1 4.50±0.1 1.80±0.1 ● Collector Power Dissipation: PC=500mW 2.50±0.1 4.00±0.1 ● Collector current: IC=-2A ● Complementary to KTC3205 0.53±0.1 3.00±0.1

transistor wu1

Abstract: transistor wu1 5
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTA1267L EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES • Excellent hFF Linearity : hFE 0.1mA /W2rnA)=0.95(Typ.). • Low Noise : NF=0.2dB(Typ.), 3dB(Max.). • Complementary to KTC3199L. MAXIMUM RATINGS (Ta=25°C)

Contextual Info: MCC KTA1270-O KTA1270-Y
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant "P" Suffix designates RoHS

KTA1273

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTA1273 EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURES • Complementary to KTC3205. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage V CBO -30 V Collector-Emitter Voltage

KTA1267

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# KTA1267 Features • • • Excellent hFE Linearity: hFE 0.1mA /h FE (2.0mA)=0.95(Typ) Low Noise: NF=1.0dB(Typ.), 10dB(Max.) Complementary to KTC3199

KTA1267

Abstract: ktC3199 transistor
Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# KTA1267 Features • • • Excellent hFE Linearity: hFE 0.1mA /h FE (2.0mA)=0.95(Typ) Low Noise: NF=1.0dB(Typ.), 10dB(Max.)

transistor 1g

Abstract: MARKING 1G TRANSISTOR ktc32 KTA1298
Contextual Info: KTA1298 SEMICONDUCTOR TECHNICAL DATA Shandong Yiguang Electronic Joint stock Co., Ltd * PNP EPITAXIAL SILICON TRANSISTOR Complement to KTC3265 ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Characteristic Symbol Rating Package:SOT-23 Unit Collector-Base Voltage Vcbo

A1267

Abstract: transistor A1267 A1267 transistor KTA12 a1267* transistor transistor a1267 gr A1267 Y
Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# KTA1267 Features • • • Excellent hFE Linearity: hFE 0.1mA /h FE (2.0mA)=0.95(Typ) Low Noise: NF=1.0dB(Typ.), 10dB(Max.)

A1267

Abstract: transistor A1267 transistor a1267 gr A1267 transistor a1267 gr KTA1267GR KTA1267-GR A1267 Y
Contextual Info: MCC TM Micro Commercial Components KTA1267-O KTA1267-Y KTA1267-GR
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • Excellent hFE Linearity: hFE 0.1mA /h FE (2.0mA)=0.95(Typ)

transistor A1267

Abstract: A1267 a1267* transistor A1267 transistor transistor a1267 gr ktc31 a1267 gr A1267 Y KTA1267GR A-1267
Contextual Info: MCC TM Micro Commercial Components KTA1267 KTA1267-O KTA1267-Y KTA1267-GR
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • Excellent hFE Linearity: hFE 0.1mA /h FE (2.0mA)=0.95(Typ)

KTA1267

Contextual Info: SEMICONDUCTOR KTA1267 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION SWITCHING APPLICATION. B FEATURES A ϒ⁄Excellent hFE Linearity O F : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ・Low Noise : NF=1dB(Typ.), 10dB(Max.). H M G ・Complementary to KTC3199.

Contextual Info: SEMICONDUCTOR KTA1272 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURES B ・High hFE : hFE=100～320. A ・Complementary to KTC3204. F O H G M MAXIMUM RATING Ta=25℃ SYMBOL RATING UNIT Collector-Base Voltage VCBO -35 V Collector-Emitter Voltage

TO92M

Contextual Info: SEMICONDUCTOR KTC3204 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURES B A ・Complementary to KTA1272. F O H M CHARACTERISTIC G MAXIMUM RATING Ta=25℃ SYMBOL RATING UNIT Collector-Base Voltage VCBO 35 V Collector-Emitter Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors KTA1274 TO-92L TRANSISTOR（PNP） FEATURES Power dissipation PCM: 1W （Tamb=25℃） Collector current ICM: -400mA Collector-base voltage V BR CBO: -80V Operating and storage junction temperature range

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TO – 92L KTA1241 TRANSISTOR PNP 1. EMITTER 2. COLLECTOR FEATURES z Low Collector Saturation Voltage z High Power Dissipation 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

KTA1281

Abstract: transistor KTA1281 ic 3020 KTC3209 HIGH SPEED SWITCHING TRANSISTOR PNP 50V 15A 01PSo ktc3209 y
Contextual Info: K E C SEMICONDUCTOR TECHNICAL KOREA ELECTRONICS CO.,LTD. KTA1281 D A TA EPITAXIAL PLANAR PNP TRANSISTOR POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. FEATURES • Low Collector Saturation Voltage : VcE sat =- 0 .5 V (Max.) (IC=-1A) • High Speed Switching Time : tstg=1.0//S(Typ.)

transistor a1271

Abstract: KTC3203 Y A1271 KTC3203 A1271 Y A1271 transistor ktC3203 y transistor KTA1271 lb25-1
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTC3203 EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURE • Complementary to KTA1271. RATING UNIT Collector-Base Voltage V CBO 35 V Collector-Emitter Voltage V CEO 30 V Em itter-Base Voltage V ebo 5 V Collector Current