KTC31 Search Results

NPN Bipolar Transistor

Abstract: KTC3198-O TO-92 NPN Bipolar Transistor Bl 370 MARKING A1G
Contextual Info: KTC3198-O/Y/GR/BL Taiwan Semiconductor Small Signal Product TO-92 NPN Bipolar Transistor FEATURES - The transistor is subdivided into four groups according to its DC current gain: O, Y, GR, BL - Pb free and RoHS compliant MECHANICAL DATA - Case: TO-92 small outline plastic package

KTC3198A

Abstract: 41BL
Contextual Info: SEMICONDUCTOR KTC3198A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B FEATURES C A ・Excellent hFE Linearity : hFE 2 =100(Typ.) at VCE=6V, IC=150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). N ・Low Noise : NF=1dB(Typ.). at f=1kHz.

C3198

Abstract: C3198L KTC3198L marking "gr"
Contextual Info: SEMICONDUCTOR KTC3198L MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 2. Marking K 816 C3198L GR No. Item 1 KEC K 2 Lot No. 816 98.06.23 Marking Description KEC CORP. 8 Year 0 ~ 9 : 1900~1999 16 Week 16 : 16th Week 3 Device Name C3198L

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTA1267 e p it a x ia l p la n a r pnp t r a n s i s t o r GENERAL PURPOSE APPLICATION SWITCHING APPLICATION. FEATURES • Excellent h FE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). • Low Noise : NF=ldB(Typ.), 10dB(Max.). • Complementary to KTC3199.

transistor wu1

Abstract: transistor wu1 5
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTA1267L EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES • Excellent hFF Linearity : hFE 0.1mA /W2rnA)=0.95(Typ.). • Low Noise : NF=0.2dB(Typ.), 3dB(Max.). • Complementary to KTC3199L. MAXIMUM RATINGS (Ta=25°C)

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTC3113 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURE • High DC Current Gain : hFE= 600~ 3600. • Small Package. DIM M ILLIM ETERS A 3.20 MAX B 4.30 MAX 0.55 MAX C D 2.40±0.I5 1.27

Contextual Info: SEM ICO NDUCTO R TECHNICAL DATA KTC3195 EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. VHF BAND AMPLIFIER APPLICATION. FEATURES • Small Reverse Transfer Capacitance : Cre=0.7pF Typ. . • Low Noise Figure : NF=2.5dB(Typ.) (f=100MHz).

KTA1267

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# KTA1267 Features • • • Excellent hFE Linearity: hFE 0.1mA /h FE (2.0mA)=0.95(Typ) Low Noise: NF=1.0dB(Typ.), 10dB(Max.) Complementary to KTC3199

c3199

Abstract: transistor c3199 C3199 transistor transistor C3199 GR C3199 gr ktC3199 transistor C3199 y
Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components KTC3199 Features • • • • High DC Current Gain: hFE=70~700 Excellent hFE Linearity: hFE 0.1mA /h FE (2.0mA)=0.95(Typ)

KTC3198 transistor

Abstract: KTC3198 IC 555 transistor TO-92 Outline Dimensions datasheet of ic 555 ktc31
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors KTC3198 TRANSISTOR（ NPN ） TO—92 FEATURE Power dissipation PCM : 0.625 W（Tamb=25℃） Collector current ICM : 0.15 A Collector-base voltage V BR CBO : 60 V Operating and storage junction temperature range

KTA1267

Contextual Info: SEMICONDUCTOR KTA1267 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION SWITCHING APPLICATION. B FEATURES A ϒ⁄Excellent hFE Linearity O F : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ・Low Noise : NF=1dB(Typ.), 10dB(Max.). H M G ・Complementary to KTC3199.

Contextual Info: SEMICONDUCTOR KTC3195 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. VHF BAND AMPLIFIER APPLICATION. B FEATURES A ・Small Reverse Transfer Capacitance O F : Cre=0.7pF Typ. . ・Low Noise Figure : NF=2.5dB(Typ.) (f=100MHz).

Contextual Info: SEMICONDUCTOR KTC3113 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B FEATURE A ・High DC Current Gain : hFE=600～3600. O F ・Small Package. H G M MAXIMUM RATING Ta=25℃ RATING UNIT Collector-Base Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 KTC3194 TRANSISTOR NPN 1.EMITTER FEATURES z General Purpose Switching Application 2.COLLECTOR 3.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbo

KTC3199

Abstract: KTA1267 ktC3199 transistor
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTC3199 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • High DC Current Gain : hFE=70~700. • Excellent I lfe Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). • Low Noise : NF=ldB(Typ.), 10dB(Max.).

KTC3112

Contextual Info: SEMICONDUCTOR KTC3112 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURE A ᴌHigh DC Current Gain : hFE=600ᴕ3600. N E K MAXIMUM RATING Ta=25ᴱ CHARACTERISTIC G J D SYMBOL RATING UNIT Collector-Base Voltage

KTC3191

Abstract: application of common emitter amplifier
Contextual Info: SEMICONDUCTOR KTC3191 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. HF BAND AMPLIFIER APPLICATION. B A FEATURE O F ᴌLow Noise Figure : NF=3.5dB Max. (f=1MHz). H G M MAXIMUM RATING (Ta=25ᴱ) SYMBOL RATING

Contextual Info: SEMICONDUCTOR KTC3121 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR TV TUNER, UHF OSCILLATOR APPLICATION. COMMON BASE TV TUNER, UHF CONVERTER APPLICATION. (COMMON BASE) FEATURES 1998. 6. 15 Revision No : 1 1/3

Contextual Info: SEMICONDUCTOR KTC3190 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. HF BAND AMPLIFIER APPLICATION. B C A FEATURE ᴌLow Noise Figure : NF=3.5dB Max. (f=1MHz). N E K G J D MAXIMUM RATING (Ta=25ᴱ) UNIT Collector-Base Voltage

Contextual Info: SEMICONDUCTOR KTC3199 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION SWITCHING APPLICATION. FEATURES 1996. 5. 30 Revision No : 1 1/3

transistor KTC3198

Contextual Info: SEMICONDUCTOR KTC3198 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Excellent hFE Linearity : hFE 2 =100(Typ.) at VCE=6V, IC=150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). ・Low Noise : NF=1dB(Typ.). at f=1kHz.

KTC3198L

Contextual Info: SEMICONDUCTOR KTC3198L TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES B C ・Excellent hFE Linearity A : hFE 2 =100(Typ.) at VCE=6V, IC=150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). ・Low Noise : NF=0.2dB(Typ.). f=(1kHz).

transistor KTC3199

Contextual Info: MCC
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# KTA1267 Features • • • Excellent hFE Linearity: hFE 0.1mA /h FE (2.0mA)=0.95(Typ) Low Noise: NF=1.0dB(Typ.), 10dB(Max.) Complementary to KTC3199

KTC3197

Abstract: ic1403
Contextual Info: SEMICONDUCTOR KTC3197 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. VHF BAND AMPLIFIER APPLICATION. B C A FEATURES ᴌHigh Gain : Gpe=33dB Typ. (f=45MHz). ᴌGood Linearity of hFE. N E K G J D MAXIMUM RATING (Ta=25ᴱ) UNIT Collector-Base Voltage