KTC3199 Search Results

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTA1267 e p it a x ia l p la n a r pnp t r a n s i s t o r GENERAL PURPOSE APPLICATION SWITCHING APPLICATION. FEATURES • Excellent h FE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). • Low Noise : NF=ldB(Typ.), 10dB(Max.). • Complementary to KTC3199.

transistor wu1

Abstract: transistor wu1 5
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTA1267L EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES • Excellent hFF Linearity : hFE 0.1mA /W2rnA)=0.95(Typ.). • Low Noise : NF=0.2dB(Typ.), 3dB(Max.). • Complementary to KTC3199L. MAXIMUM RATINGS (Ta=25°C)

KTA1267

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# KTA1267 Features • • • Excellent hFE Linearity: hFE 0.1mA /h FE (2.0mA)=0.95(Typ) Low Noise: NF=1.0dB(Typ.), 10dB(Max.) Complementary to KTC3199

c3199

Abstract: transistor c3199 C3199 transistor transistor C3199 GR C3199 gr ktC3199 transistor C3199 y
Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components KTC3199 Features • • • • High DC Current Gain: hFE=70~700 Excellent hFE Linearity: hFE 0.1mA /h FE (2.0mA)=0.95(Typ)

KTA1267

Contextual Info: SEMICONDUCTOR KTA1267 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION SWITCHING APPLICATION. B FEATURES A ϒ⁄Excellent hFE Linearity O F : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ・Low Noise : NF=1dB(Typ.), 10dB(Max.). H M G ・Complementary to KTC3199.

KTC3199

Abstract: KTA1267 ktC3199 transistor
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTC3199 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • High DC Current Gain : hFE=70~700. • Excellent I lfe Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). • Low Noise : NF=ldB(Typ.), 10dB(Max.).

Contextual Info: SEMICONDUCTOR KTC3199 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION SWITCHING APPLICATION. FEATURES 1996. 5. 30 Revision No : 1 1/3

transistor KTC3199

Contextual Info: MCC
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# KTA1267 Features • • • Excellent hFE Linearity: hFE 0.1mA /h FE (2.0mA)=0.95(Typ) Low Noise: NF=1.0dB(Typ.), 10dB(Max.) Complementary to KTC3199

KTC3199 GR

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components KTC3199 Features • • • • High DC Current Gain: hFE=70~700 Excellent hFE Linearity: hFE 0.1mA /h FE (2.0mA)=0.95(Typ)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO – 92S KTA1267 TRANSISTOR PNP 1. EMITTER FEATURES z Excellent hFE Linearity z Complementary to KTC3199 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

c3199

Abstract: C3199L C319 KTC3199L
Contextual Info: SEMICONDUCTOR KTC3199L MARKING SPECIFICATION TO-92M PACKAGE 1. Marking method Laser Marking 2. Marking C3199L GR 816 No. Item Marking Description 1 Device Name C3199L KTC3199L 2 hFE Grade GR O,Y,GR,BL 3 Lot No. 816 98.06.23 Revision No : 00 8 Year 0 ~ 9 : 1900~1999

c3199

Abstract: transistor C3199 GR
Contextual Info: MCC TM Micro Commercial Components KTC3199-O KTC3199-Y KTC3199-GR KTC3199-BL
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • x • • • • NPN General Purpose Application

KTA1267L

Abstract: KTC3199L
Contextual Info: SEMICONDUCTOR KTA1267L TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES B ᴌExcellent hFE Linearity A : hFE 0.1mA /hFE(2mA)=0.95(Typ.). O F ᴌLow Noise : NF=0.2dB(Typ.), 3dB(Max.). ᴌComplementary to KTC3199L. H G

KTA1267

Abstract: KTC3199 KTA1267 GR
Contextual Info: SEMICONDUCTOR KTA1267 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION SWITCHING APPLICATION. B FEATURES A Excellent hFE Linearity O F : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ᴌLow Noise : NF=1dB(Typ.), 10dB(Max.). H M G ᴌComplementary to KTC3199.

KTC31

Abstract: KTC3199 GR ktc3199 y
Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components KTC3199 Features • • • • NPN General Purpose Application High DC Current Gain: hFE=70~700 Excellent hFE Linearity: hFE 0.1mA /h FE (2.0mA)=0.95(Typ)

c3199

Abstract: transistor c3199 C3199 transistor KTC3199GR transistor C3199 GR C3199 gr KTC3199Y C3199 y ktc31 KTC3199 GR
Contextual Info: MCC KTC3199 KTC3199-O KTC3199-Y KTC3199-GR KTC3199-BL
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • High DC Current Gain: hFE=70~700

ER100

Contextual Info: S EM IC O N D U C T O R KTC3199 TECHNI CAL DATA EPI TAXI AL PLANAR NPN TRA NS IST OR G E N E R A L PUR PO SE A PPLICATIO N SW ITC H IN G APPLICATIO N. FEA T U RE S • H igh DC C urrent G ain : h FE=70~700. • E xcellent h FE L inearity : h FE 0 .1m A /h FE(2m A )=0.95(T yp.).

C3199

Abstract: transistor c3199 c3199gr KTC3199 GR C3199 transistor C3199 gr C3199 y KTC3199 C3199 equivalent transistor KTC3199
Contextual Info: SEMICONDUCTOR KTC3199 MARKING SPECIFICATION TO-92M PACKAGE 1. Marking method Laser Marking 2. Marking C3199 GR 116 No. Item Marking 1 Device Name C3199 KTC3199 2 hFE Grade GR O,Y,GR,BL 3 Lot No. 116 01.09.27 Revision No : 01 Description 1 Year 0 ~ 9 : 2000~2009

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors KTC3199 TO-92S TRANSISTOR NPN FEATURES Power dissipation PCM: 1. EMITTER 400 2. COLLECTOR mW (Tamb=25℃) Collector current 150 mA ICM: Collector-base voltage 50 V

Contextual Info: SEMICONDUCTOR KTA1267 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION SWITCHING APPLICATION. FEATURES ϒ⁄Excellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ・Low Noise : NF=1dB(Typ.), 10dB(Max.). ・Complementary to KTC3199.

KTA1267L

Abstract: KTC3199L
Contextual Info: SEMICONDUCTOR KTC3199L TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AUDIO AMPLIFIER APPLICATION. FEATURES B ᴌHigh DC Current Gain : hFE=70ᴕ700. A ᴌExcellent hFE Linearity O F : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ᴌLow Noise : NF=0.2dB(Typ.), 3dB(Max.).

transistor KTC3199

Abstract: KTA1267 KTC3199 KTC3199 GR
Contextual Info: SEMICONDUCTOR KTC3199 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION SWITCHING APPLICATION. B FEATURES A ᴌHigh DC Current Gain : hFE=70~700. O F ᴌExcellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). H M G ᴌLow Noise : NF=1dB(Typ.), 10dB(Max.).

KTC3199 GR

Abstract: KTC3199 transistor KTC3199 ktC3199 transistor ktc3199 y ktc31 npn hfe 120-240
Contextual Info: KTC3199 KTC3199 TO-92S TRANSISTOR NPN FEATURES Power dissipation PCM: 1. EMITTER 400 2. COLLECTOR mW (Tamb=25℃) Collector current ICM: 150 mA Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range 3. BASE 123 TJ, Tstg: -55℃ to +150℃

KTC3199 GR

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# KTC3199 Features • • • • NPN General Purpose Application High DC Current Gain: hFE=70~700 Excellent hFE Linearity: hFE 0.1mA /h FE (2.0mA)=0.95(Typ)