KTC32 Search Results

Contextual Info: KTA1273TL PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE TO-92L Complementary NPN type available KTC3205TL G H 1Emitter 2Collector 3Base J A Collector D 2 REF.

transistor ktc3202

Abstract: KTC3202 KTA1270
Contextual Info: SEMICONDUCTOR KTC3202 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A Excellent hFE Linearity : hFE 2 =25(Min.) at VCE=6V, IC=400mA. Complementary to KTA1270. N E K G J D ) SYMBOL RATING UNIT

KTC3207

Contextual Info: SEMICONDUCTOR KTC3207 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE SWITCHING APPLICATION. COLOR TV HORIZONTAL DIRVER APPLICATION. COLOR TV CHROMA OUTPUT APPLICATION. B D A FEATURES High Voltage : V BR CEO=300V. P DEPTH:0.2 Small Collector Output Capacitance : Cob=3.0pF(Typ.).

KTC3295

Abstract: MARKING TA
Contextual Info: SEMICONDUCTOR KTC3295 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking TA No. 1 Item Marking Device Mark T KTC3295 hFE Grade A A,B * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method

KTC3207T

Abstract: KTC3207
Contextual Info: SEMICONDUCTOR KTC3207T MARKING SPECIFICATION TSM PACKAGE 1. Marking method Laser Marking No. 2 LXO 1 1 2. Marking Item Marking Description Device Mark LX KTC3207T hFE Grade O O,Y * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

c3200 BL

Abstract: c3200gr c3200 gr C3200 transistor c3200 KTC3200 c3200 transistor KTc3200 BL K C3200 BL hFE kec
Contextual Info: SEMICONDUCTOR KTC3200 MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 2. Marking K 816 C3200 GR No. Item 1 KEC K 2 Lot No. 816 98.06.23 Marking Description KEC CORP. 8 Year 0 ~ 9 : 1900~1999 16 Week 16 : 16th Week 3 Device Name C3200 KTC3200

025DBV

Contextual Info: SEMICONDUCTOR KTC3295 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURE ・High hFE : hFE=600～3600. ・Noise Figure : 0.5dB Typ. at f=100Hz. MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage

KTC3206

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors KTC3206 TO-92L TRANSISTOR NPN 1. EMITTER FEATURE z High Breakdown Voltage : VCEO=150V(Min.) z Low Output Capacitance : Cob=5.0pF(Max.) z High Transition Frequency : fT=120MHz(Typ.).

Contextual Info: Transistors SMD Type PNP Silicon Epitaxial Transistor KTA1273 SOT-89 • Features Unit:mm 1.50 ±0.1 4.50±0.1 1.80±0.1 ● Collector Power Dissipation: PC=500mW 2.50±0.1 4.00±0.1 ● Collector current: IC=-2A ● Complementary to KTC3205 0.53±0.1 3.00±0.1

KTA1273

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTA1273 EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURES • Complementary to KTC3205. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage V CBO -30 V Collector-Emitter Voltage

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# KTC3202 Features • • • • General Purpose Application Switching Application Excellent hFE Linearity: hFE 2 =25(Min. ) at V CE=6V, IC=400mA

transistor 1g

Abstract: MARKING 1G TRANSISTOR ktc32 KTA1298
Contextual Info: KTA1298 SEMICONDUCTOR TECHNICAL DATA Shandong Yiguang Electronic Joint stock Co., Ltd * PNP EPITAXIAL SILICON TRANSISTOR Complement to KTC3265 ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Characteristic Symbol Rating Package:SOT-23 Unit Collector-Base Voltage Vcbo

Contextual Info: SEMICONDUCTOR KTC3245 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. FEATURES B C ・High Breakdown Voltage. A ・Collector Power Dissipation : PC=625mW. N E K SYMBOL RATING UNIT Collector-Base Voltage VCBO 400 V Collector-Emitter Voltage

Contextual Info: SEMICONDUCTOR KTA1272 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURES B ・High hFE : hFE=100～320. A ・Complementary to KTC3204. F O H G M MAXIMUM RATING Ta=25℃ SYMBOL RATING UNIT Collector-Base Voltage VCBO -35 V Collector-Emitter Voltage

KTC3205 transistor

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors KTC3205 TRANSISTOR NPN TO-92L 1. EMITTER FEATURES Power dissipation PCM: 2. COLLECTOR 1 W (Tamb=25℃) 3. BASE Collector current ICM: 2 A 30 V Collector-base voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors KTC3202 TRANSISTOR NPN TO-92 FEATURES General Purpose Application Switching Application 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors KTC3205 TO-92L TRANSISTOR NPN 1. EMITTER 2. COLLECTOR FEATURES 3. BASE Power dissipation PCM: 1 W (Ta=25℃) 123 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors KTC3205 ） TRANSISTOR（ NPN TO-92L FEATURES Power dissipation PCM: 1W （Tamb=25℃） 1.EMITTER Collector current ICM: 2A 2.COLLECTOR 3.BASE Collector-base voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors KTC3207 TO-92L TRANSISTOR NPN 1. EMITTER FEATURES Power dissipation PCM: 2. COLLECTOR 1 3. BASE W (Tamb=25℃) Collector current 100 mA ICM: Collector-base voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors KTC3265 SOT-23 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.8 A ICM: Collector-base voltage

transistor a1271

Abstract: KTC3203 Y A1271 KTC3203 A1271 Y A1271 transistor ktC3203 y transistor KTA1271 lb25-1
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTC3203 EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURE • Complementary to KTA1271. RATING UNIT Collector-Base Voltage V CBO 35 V Collector-Emitter Voltage V CEO 30 V Em itter-Base Voltage V ebo 5 V Collector Current

KTC3203Y

Abstract: KTC3203 KTC3203 Y ktc32 Transistor hFE CLASSIFICATION Marking CE KTA1271 y KTC3203-O ktC3203 y transistor npn transistor to 92 KTA1271
Contextual Info: MCC TM Micro Commercial Components KTC3203-O
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# KTC3203-Y Features • • • • General Purpose Application Switching Application Excellent hFE Linearity: hFE 2 =35(Min. ) at V CE=1.0V, IC=700mA

Transistor KTC3205

Abstract: KTC3205 KTC3205 transistor kta1273* transistor KTA1273 *A1273 Transistor
Contextual Info: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTC3205 EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURE • Complementary to KTA1273. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage V CBO 30 V Collector-Emitter Voltage

KTC3217

Contextual Info: SEMICONDUCTOR TECHNICAL D A TA KOREA ELECTRONICS CO.,LTD. KTC3217 TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE SWITCHING APPLICATION. COLOR TV HORIZONTAL DIRVER APPLICATION. COLOR TV CHROMA OUTPUT APPLICATION. FEATURES • High Voltage : V b r c e o = 4 5 0 V .