KTA1298 Search Results

transistor 1g

Abstract: MARKING 1G TRANSISTOR ktc32 KTA1298
Contextual Info: KTA1298 SEMICONDUCTOR TECHNICAL DATA Shandong Yiguang Electronic Joint stock Co., Ltd * PNP EPITAXIAL SILICON TRANSISTOR Complement to KTC3265 ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Characteristic Symbol Rating Package:SOT-23 Unit Collector-Base Voltage Vcbo

KTA1298

Abstract: KTC3265 KTA1298 kec
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTA1298 EPITA XIA L PLANAR PNP TR A N SISTO R LOW FREQUENCY POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION. FEATURES • High DC Current Gain : 1ife =100~320. • Low Saturation Voltage : VcE sat =_0.4V(Max.) (Ic=-500mA, IB=-20mA).

KTA1298

Abstract: KTC3265
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KTA1298 EPITAXIAL PLANAR PNP TRANSISTOR LOW FREQUENCY PO W ER A M PLIFIER APPLICATION. POW ER SW ITCHING APPLICATION. FE A T U R E S • High DC Current Gain : hFE=100~320. • Low Saturation Voltage

Contextual Info: SEMICONDUCTOR KTA1298 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW FREQUENCY POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION. FEATURES ・High DC Current Gain : hFE=100～320. ・Low Saturation Voltage : VCE sat =-0.4V(Max.) (IC=-500mA, IB=-20mA).

Contextual Info: KTA1298 PNP Silicon Transistors COLLECTOR 3 * “G” Lead Pb -Free 1 BASE 2 SOT-23 EMITTER MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -Continuous Symbol VCEO VCBO VEBO IC Value

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 1. BASE KTA1298 TRANSISTOR（ PNP ） 2. EMITTER 3. COLLECTOR FEATURES １．０ Power dissipation PCM : 0.2 W（Tamb=25℃） Collector current ICM : -0.8 A

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors KTA1298 SOT_23 TRANSISTOR PNP 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current -0.8 A ICM: Collector-base voltage

sot-23 IY

Abstract: KTA1298 IY TRANSISTOR MARKING IY SOT
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 KTA1298 TRANSISTOR PNP 1. BASE 2. EMITTER FEATURES z Low frequency power amplifier application z Power switching application 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: Transistors SMD Type PNP Silicon Transistors KTA1298 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features 0.4 3 1 0.55 ● Collector Current: IC=-800mA +0.1 1.3-0.1 +0.1 2.4-0.1 ● Collector Power Dissipation: PC=200mW 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1

KTA1298

Abstract: MARKING IY SOT sot-23 IY marking IY
Contextual Info: SEMICONDUCTOR KTA1298 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking IY No. 1 Item Marking Device Mark I KTA1298 hFE Grade Y O,Y * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors KTC3265 SOT-23 TRANSISTOR NPN FEATURES 1. BASE 2. EMITTER z z 3. COLLECTOR High DC current gain: hFE=100-320 Complementary to KTA1298 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 KTA1298 TRANSISTOR PNP 1. BASE 2. EMITTER FEATURES z Low frequency power amplifier application z Power switching application 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

KTA1298

Abstract: KTC3265 EY transistor Transistor Marking EY npn transistor Marking EY
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors KTC3265 SOT-23 TRANSISTOR NPN FEATURES 1. BASE 2. EMITTER z z 3. COLLECTOR High DC current gain Complementary to KTA1298 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

transistor smd IY

Contextual Info: Diodes IC Transistors Transistor T SMD Type Product specification KTA1298 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features 0.4 3 1 0.55 ● Collector Current: IC=-800mA +0.1 1.3-0.1 +0.1 2.4-0.1 ● Collector Power Dissipation: PC=200mW 2 +0.1 0.95-0.1

Contextual Info: SEMICONDUCTOR KTA1298 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW FREQUENCY POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION. FEATURES 1998. 6. 15 Revision No : 1 1/2

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors KTC3265 SOT—23 ） TRANSISTOR（ NPN 1. BASE 2. EMITTER FEATURES 1.0 3. COLLECTOR ∙ High DC current gain: hFE=100-320 2.4 1.3 0.95 0.4 0.95 1.9 2.9 ∙ Complementary to kta1298

ktc32

Abstract: sot-23 EY EY transistor
Contextual Info: KTC3265 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — High DC current gain: hFE=100-320 Complementary to KTA1298 — Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value

Contextual Info: SOT-23 Plastic-Encapsulate Transistors KTA1298 SOT_23 TRANSISTOR PNP 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current -0.8 A ICM: Collector-base voltage -35 V V(BR)CBO: Operating and storage junction temperature range

KTA1298

Abstract: sot-23 IY
Contextual Info: KTA1298 PNP Silicon Transistors COLLECTOR 3 1 BASE 2 SOT-23 EMITTER MAXIMUM RATINGS Ta=25 C Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -Continuous Symbol VCEO VCBO VEBO IC Value -30 -35 -5.0 -800 Unit Vdc

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors KTC3265 SOT-23 TRANSISTOR NPN FEATURES 1. BASE 2. EMITTER z z 3. COLLECTOR High DC current gain Complementary to KTA1298 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: SOT-23 Plastic-Encapsulate Transistors KTC3265 SOT—23 ） TRANSISTOR（ NPN 1. BASE 2. EMITTER FEATURES 1.0 3. COLLECTOR ∙ High DC current gain: hFE=100-320 2.4 1.3 0.95 0.4 0.95 1.9 2.9 ∙ Complementary to kta1298 Unit : mm MAXIMUM RATINGS* TA=25℃ unless otherwise noted

IY TRANSISTOR

Abstract: sot-23 IY MARKING CODE IY TRANSISTOR MARKING CODE IY KTA1298 KTC3265 MARKING IY SOT SOT-23 marking IY
Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES KTA1298 Pb z High DC current gain:hFE=100-320. z Low saturation voltage:VCE sat =-0.4V(Max) Lead-free (IC=-500mA,IB=-20mA). B z Suitable for driver stage of small motor.

Contextual Info: KTA1298 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Low frequency power amplifier application — Power switching application MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC* TJ Parameter Collector-Base Voltage

MBR1620CT

Abstract: 1.5Ke240 MBR5020 MBR5045PT BC337 AP6KE15C S9012 s9018 MP106 MB-106
Contextual Info: MCC PART INDEX Diodes PART NUMBER 1.5KE10(C)(A) 1.5KE100(C)(A) 1.5KE11(C)(A) 1.5KE110(C)(A) 1.5KE12(C)(A) 1.5KE120(C)(A) 1.5KE13(C)(A) 1.5KE130(C)(A) 1.5KE15(C)(A) 1.5KE150(C)(A) 1.5KE16(C)(A) 1.5KE160(C)(A) 1.5KE17(C)(A) 1.5KE170(C)(A) 1.5KE18(C)(A) 1.5KE180(C)(A)