KM6465 Search Results

Contextual Info: CM O S SRAM KM6465B 16,384 WORD x 4 Bit CMOS Static RAM FEATURES • Fast Access Time: 12, 15, 20, 25ns max. • Low Power Dissipation Standby (TTL) : 35mA (max.) (CMOS): 1mA (max.) • Operating KM6465B-12 :140mA (max.) KM6465B-15 :130mA (max.) KM6465B-20 :120mA (max.)

6465B

Contextual Info: KM 6465B CM O S SRAM 16,384 WORD x 4 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 12, 15, 20, 25ns max. • Low Power Dissipation Standby (TTL) : 35mA (max.) (CMOS): 1mA (max.) • Operating KM6465B-12 : 140mA (max.) KM6465B-15 : 130mA (max.)

Contextual Info: CMOS SRAM KM6465B/BL 16,384 WORD x 4 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 12, 15, 20, 25ns max. • Low Power Dissipation Standby (TTL) : 35mA (max.) (CMOS): 1mA (max.) 100^1A (max.) L-Version • Operating KM6465BP/J-12: 140mA (max.)

Contextual Info: SAMSUNG ELECTRONICS INC b4E » • TTbMlMc? OOlMObS TTÖ KM6465A/KM6465AL shgk CMOS SRAM 1 6 K x 4 Bit St ati c R A M FEATURES GENERAL DESCRIPTION • Fast Access Time: 25, 35, 45ns max. • Low Power Dissipation Standby (TTL) : 30mA (max.) (CMOS): 2mA (max.)

batery

Abstract: KM6465B-12 KM6465B-15 KM6465B-20 KM6465B-25
Contextual Info: CM O S SRAM KM6465B 16,384 WORD x 4 Bit CMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast A ccess Tim e: 12, 15, 20, 25ns max. • Lo w P ow er D issipatio n S tandby (TTL) : 35m A (max.) (CMOS): 1m A (max.) ' • Operating KM6465B-12 :140m A (max.)

Contextual Info: CMOS SRAM KM6465B 16Kx4Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 12, 15, 2 0 ,2 5 ns Max. T h e K M 6 4 6 5 B is a 6 5 ,5 3 6 -b it • Low Pow er Dissipation Random Access Memory organized as 16,3 84 words by Standby (TTL) h igh-speed S tatic

SOJ 44

Abstract: 1MX1 KM6865
Contextual Info: FUNCTION GUIDE MEMORY ICs High speed & Ultra High Speed SRAM Den. Part Name 64K KM6465B/BL KM6466B/BL KM6865B/BL KM64258B KM64258C KM64V258C KM64B258A KM64B261A KM68257B/BL KM68257C/CL KM68V257C/CL KM68B257A KM68B261A KM69B257A KM616513 KM616V513 KM611001

Contextual Info: CMOS SRAM KM6465A/KM6465AL 1 6 K x 4 Bit Static RAM FEATURES GENERAL DESCRIPTION • F a s t A c c e s s T im e : 2 5, 3 5 , 4 5 n s m ax . • Low P ow er D issipation S tandby (TTL) : 3 0 m A (m ax.) (C M O S): 2m A (max.) 100/tA (m ax.) L Version The

tpw34

Contextual Info: CMOS SRAM KM6465A/KM6465AL 1 6 K x 4 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 25, 35, 45ns max. • Low Power Dissipation Standby (TTL) : 30mA (max.) (CMOS): 2mA (max.) 100flA (max.) L-Version Operating : 120mA (max.) • Single 5 V ± 1 0 % Power Supply

KM6465BP

Contextual Info: KM6465B/BL CMOS SRAM 16,384 WORD x 4 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 12, 15, 20, 25ns max. • Low Power Dissipation Standby (TTL) : 35mA (max.) (CMOS): 1mA (max.) 100^A (max.) L-Version • Operating KM6465BP/J-12: 140mA (max.)

Contextual Info: CMOS SRAM KM6465A/KM6465AL 1 6 K x 4 Bit Static R A M FEATURES GENERAL DESCRIPTION • Fast Access Time: 25, 35, 45ns max. • Low Power Dissipation Standby (TTL) : 30mA (max.) (CMOS): 2mA (max.) 100>jA (max.) L-Version Operating : 120mA (max.) • Single 5V ± 10% Power Supply

23E D

Abstract: km6465
Contextual Info: SAMSUNG SEMICONDUCTOR INC 23E D 7^4145 DGOaab4 ñ • KM6465P/KM6465LP CMOS SRAM 16K x 4 Bit Static RAM FEATURE GENERAL DESCRIPTION • Fast Access Time 25,35,45ns max. • Low Power Dissipation Standby (TTL) : 2 mA (max.) (CMOS): 100 (iA (max.) Operating

km6465

Contextual Info: SAMSUNG ELECTRONICS INC L.7E D • 7^4142 0 Ù I 7 5 4 2 3^b « S f lG K KM6465B/BL CMOS SRAM 16,384 WORD x 4 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 12, 15, 20, 25ns max. • Low Power Dissipation Standby (TTL) : 35mA (max.)

IMS1620-35

Abstract: IMS1620-45 IMS1620-55 IMS1620-70 IMS1620L-35 IMS1620L-45 IMS1620L-55 IMS5788H-5
Contextual Info: - 82 6 4 K x m « it £ PC TAAC max ns) TCAC max (ns) TOE max (ns) CMOS S t a t i c RAM (1 6 3 8 4 X 4 ) A 2 2 P I N & TOH •in (ns) TOD max (ns) TWP nun (ns) TiR max (ns) V D D or V C C (ns) TWD nin (ns) TDS ■in (ns) TDH (V) I DD max (■A) A I I'D STANDBY

uPD23C4000

Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A

M5M5188P-55

Abstract: MCM6288P30 MB81C74-35 LH5162-25 LH5162-35 LH5165-25 LH5165-35 M5M5188P-45 MB81C74-25 P4C188
Contextual Info: 71 6 4 K A X £ £ it £ °C TAAC max (ns) TCAC max (ns) TOR max (ns) -y TOH min (ns) CMOS y -1TOD (ns) y TWP min (ns) S t a t i c tt & TDS ram (ns) RAM ( 1 6 3 8 4 x 4 ) M . TDH rain (ns) TWD (ns) TWR max (ns) V D D o- V C C (VI 2 2 P i N À m I DD max

KM424C256Z

Abstract: SIMM 30-pin 30-pin SIMM RAM KM41C256P KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"
Contextual Info: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Number Capacity Organization Speed ns Technology Features Packages Remark 64K bit KM4164BP 100/120/150 NMOS Page Mode 16 Pin DIP Now 256K bit KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J

tc55416p

Abstract: MB81C74-35 MCM6288P30 LH5162-25 LH5162-35 LH5165-25 LH5165-35 M5M5188P-45 M5M5188P-55 MB81C74-25
Contextual Info: 71 6 4 K A X £ £ it £ °C TAAC max (ns) TCAC max (ns) TOR max (ns) -y TOH min (ns) CMOS -1- y TOD (ns) y TWP min (ns) S t a t i c & tt TDS ram (ns) RAM ( 1 6 3 8 4 x 4 ) m M . TDH rain (ns) TWD (ns) TWR max (ns) V D D o- V C C (VI 2 2 P i N I DD max (mA)

DT 7188

Abstract: HY62C88-70 HY62C88L-35 HY62C88L-45 HY62C88L-55 HY62C88L-70 IDT7188L45 IDT7188L70 IDT7188L85
Contextual Info: - 70 6 4 K m tfc £ iâ&ïcffl CC TAAC •ax ns) TCAC max (ns) TOE max (ns) CMOS 7 X 4 TOH sin (ns) y / TOD nax (ns) TWP min (ns) S t a t i c [1 A M ( I 6 3 8 4 X 4 ) f t it TDS rain (ris) « T'WR max (ns) V D D or V C C I DD max (ns) TWD rain (ns) (V) (• A)

41C464

Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
Contextual Info: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page

K93C46

Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257

TC55B8128

Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6

TC55B4257

Abstract: 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v
Contextual Info: CROSS REFERENCE GUIDE MEMORY ICs 3.1 Video RAM Density 256K Feature Minimum Organization 64K x4 Samsung KM424C64 Micron Toshiba NEC Hitachi Ti HM53461 2 TMS4461 HM534251 TMS44C250 TC524256A HM534251A SMJ44C250 TC524256B HM534252 MT42C4064 /a PD41264 /<PD42264

KMCJ532512

Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7