KM64257 Search Results

KM64258BJ-20

Abstract: KM64258BJ-15
Contextual Info: CMOS SRAM KM64258B 6 4 K X 4 Bit High-Speed CMOS Static RAM With OE FEATURES GENERAL DESCRIPTION • Fast A ccess Tim e: 15, 20, 25ns (max.) • Low Power Dissipation Standby (TTL) : 40m A (max.) (CMOS): 2mA (max) Operating KM64257BP/J-15: 140m A (max.)

Contextual Info: PRELIMINARY CMOS SRAM KM64258B 6 4 K X 4 Bit High-Speed CMOS Static RAM With OE FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 20, 25ns (max.) • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS): 2mA (max) Operating KM64257BP/J-15: 140mA (max.)

R0026

Abstract: km64257
Contextual Info: CMOS SRAM KM64257A/KM64257AL 6 4 K x 4 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 25,35,45ns max. • Low Power Dissipation Standby (TTL) : 3 mA (max.) (CMOS): 2mA (max.) 100/iA (max.) L-Version Operating : 120 mA (max.) • Single 5 V ± 1 0 % Power Supply

KM64258BP-15

Abstract: KM64258BJ-20 KM64258BJ-15 KM64258
Contextual Info: PRELIMINARY KM64258B CMOS SRAM 6 4 K X 4 Bit High-Speed CMOS Static RAM With OE FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 20, 25ns (max.) • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS): 2mA (max) Operating KM64257BP)J-15: 140mA (max.)

Contextual Info: KM64257A/KM64257AL CMOS SRAM 6 4 K x 4 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 25,35,45ns max. • Low Power Dissipation Standby (TTI.) : 3 mA (max.) (CMOS): 2mA (max.) 100f<A (max.) L-Version Operating : 120 mA (max.) • Single 5V + 10% Power Supply

Contextual Info: KM64257A/KM64257AL CMOS SRAM 6 4 K x 4 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 25,35,45ns max. • Low Power Dissipation Standby (TTL) : 3 mA (max.) (CMOS): 2mA (max.) 100/jA (max.) L-Version Operating : 120 mA (max.) • Single 5 V ± 1 0 % Power Supply

toshiba 32k*8 sram

Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
Contextual Info: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258

STATIC RAM 8464

Abstract: IMS1433 SSM6116 IMS1630 SSM6171 SSM7188 hitachi selection guide SSM7164 hm6264 ic 6116 ram
Contextual Info: 16K Product S e le c tio n -C ro s s Reference Guide 16K Static RAM — Product Selection Typical Power mW Maximum Speed (ns) Part No/'» L7C167 Description Packages Available121 Com. Mil. Oper. Inactive Pins 8 10 135 75 20 DIP, LCC SOIC (Gull-Wing) SOJ (J-Lead)

KM424C256Z

Abstract: SIMM 30-pin 30-pin SIMM RAM KM41C256P KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"
Contextual Info: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Number Capacity Organization Speed ns Technology Features Packages Remark 64K bit KM4164BP 100/120/150 NMOS Page Mode 16 Pin DIP Now 256K bit KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J

41C464

Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
Contextual Info: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page

K93C46

Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257

TC55B8128

Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6

KM424C256Z

Abstract: KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ
Contextual Info: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C258Z Features Packages Remark 256K X 1 256K X 1 256K X 1 256K X 1 70/80/100 70/80/100

KM41C1000BJ

Abstract: KM44C256BP KM41C1000BP KM41C1001BP KM41C256P KM44C256BJ km4164 KM41C256J KM44C1000LJ KM41C464Z
Contextual Info: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Num ber Capacity 64K b it KM4164BP 256 K b it KM41C256P I [ I Technology Features Packages R em ark 100/120/150 NM OS Page M ode 16 Pin DIP 70/80/100 70/80/100 70/80/100 70/80/100 Fast Page Fast Page