KM416C Search Results

C1000B

Abstract: 3020C
Contextual Info: KM416C1000BT ELECTRONICS CMOS DRAM 1M x16B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode C M O S DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh

km416c1200j

Abstract: km416c1200 MAS 10 RCD 71FC
Contextual Info: SAMSUNG ELECTRONICS INC b?E ]> • 7Tmi4E D01b3ña 731 SMGK CMOS DRAM KM416C1200 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The S am sung KM416C1200 is a CMOS high speed 1,048,576 bit x 16 Dynam ic Random A ccess Memory. Its

km416c254b

Contextual Info: CMOS DRAM KM416C254B, KM416V254B 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a fam ily of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,

Contextual Info: High Speed KM416C254D CMOS DRAM High Speed 256K x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Access time -4 , power consumption(Normal or Low power) and package type(SOJ or TSOP-II)

KM416C64

Contextual Info: KM416C64 CMOS DRAM 6 4 K x 1 6 B it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 65,536 x 16 bit Extended Date Out CMOS DRAMs. Extended Date Out Mode offers high speed random access of memory cells within the same row. Access time 55, 60 or 70 , power consumption

Contextual Info: SAMSUNG ELECTRONICS INC b7E D 7 ^4 1 4 2 0 G1 S Ö 73 ‘t ë ô CMOS DRAM KM416C256A/AL/ALL 256Kx 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tRAC tcAc tRC 60ns 15ns 110ns KM416C256A/AÜALL-7 70ns 20ns 130ns

Contextual Info: KM416C1204A/A-L/A-F CMOS DRAM 1M x 16 Bit CMOS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION • Performance range: KM416C1204A-6/A-L6/A-F6 tRAC tCAC tRC tHPC 60ns 17ns 110ns 24ns KM416C1204A-7/A-L7/A-F7 70ns 20ns 130ns 29ns KM416C1204A-8/A-L8/A-F8

Contextual Info: KM416C256D, KM416V256D CMOS DRAM 256K x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time (-5,-6,-7), power consumption(Normal or Low power) and

Contextual Info: SAMSUNG ELECTRONICS INC b?E D • 7^4142 GGlb343 S73 ■ SMGK KM416C1000 CMOS DRAM 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C1000 is a CMOS high speed 1,048,576 bit x 16 Dynamic Random Access Memory. Its

Contextual Info: SAMSUNG ELECTRONICS INC b7E D KM416C1200L/LL • 7^4142 DDlbmO TG6 « S H C K CMOS DRAM 1 M x 1 6 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C1200L/LL is a CMOS high speed 1,048,576 b itx 1 6 D ynam ic Random A ccess Memory.

km416c60j

Abstract: KM416C60
Contextual Info: KM416C60 CMOS DRAM 64Kx 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 65,536 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time 55,60 or 70 power consumption (Normal

VG264265B

Abstract: TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference
Contextual Info: Cross Reference Guide 1.3. Cross Reference Guide 1.3.1. Cross Reference of 256kxl6 DRAM Vendors\Configuration VIS Hitachi Hyundai Micron Motorola NEC Samsung Toshiba TI 256kxl6, 5V, EDO VG264265B HM514265D HY514264B MT4C16270 N/A PD4244265LE KM416C254D TC5144265D

KM416C256ALJ-7

Contextual Info: KM416C256ALJ-7 1/2 IL00 * C-MOS 4M (256K X 16)-BIT DYNAMIC RAM WITH FAST PAGE MODE -TOP VIEW- 16 DQ1 I/O 1 VDD(+5V) 2 GND 40 39 DQ16 I/O 17 18 19 DQ2 I/O 3 38 DQ15 I/O DQ3 I/O 4 37 DQ14 I/O DQ4 I/O 5 36 DQ13 I/O 22 23 24 25 6 VDD(+5V) DQ5 I/O 7 GND 35

Contextual Info: KM416C256D, KM416V256D CMOS DRAM 2 5 6 K x 16 Bit C M O S Dynamic RA M with Fast Page Mode DESCRIPTION This is a family of 262.144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage -*-5.0V or +3.3V , access time

Contextual Info: KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle (1K Ref. or 4K Ref.), access time (-5 or -6), power consumption(Normal or Low power) and package type(SOJ or TSOP-ll) are optional features of this family. All of this family have CASbefore-RAS refresh, ftAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in t-version. This

C254D

Abstract: e5a5
Contextual Info: High Speed KM416C254D CMOS DRAM High Speed 256K x 16Bit CM OS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Access time -4 , power consumption(Normal or Low power) and package type(SOJ or TSOP-II)

Contextual Info: KM416C256B, KM416V256B CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

la 1004a

Contextual Info: KM416C1004A, KM416C1204A KM416V1004A, KM416V1204A CMOS ORAM 1 M x 1 6B it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Dxtended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply

Contextual Info: KM416C1004A/A-L/A-F CMOS DRAM 1M x 16 Bit CMOS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C1004A/A-L/A-F is a CMOS high speed 1,048,576 bit x 16 Dynamic Random Access Memory. Its design is optimized for high performance

Contextual Info: KM416C1OOOA/A-L/A-F CMOS DRAM 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tRAC tCAC tRC 60ns 15ns 110ns KM416C1000A-7/A-L7/A-F7 70ns 20ns 130ns KM416C1000A-8/A-L8/A-F8 80ns 20ns 150ns KM416C1000A-6/A-L6/A-F6

e5as

Contextual Info: KM416C254D, KM416V254D CMOS DRAM 256K x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or + 3.3V , Access time (-5,-6 or -7), power consumption(Normal or

Contextual Info: PRELIMINARY CMOS DRAM KM416C1200 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KM416C1200 is a CMOS high speed 1,048,576 bit x 16 Dynamic Random Access Memory. Its design is optimized for high performance applications

Contextual Info: KM416C1000A, KM416C1200A KM416V1 OPPA, KM416V12PPA CMOS DRAM 1M x 16Bit CM O S Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh

KM416C1000-7

Contextual Info: KM416C1000 CMOS DRAM 1 M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C1000 is a CMOS high speed 1,048,576 bit x 16 Dynamic Random Access Memory. Its design is optimized fo r high performance applications