KM416C1200J Search Results

km416c1200j

Abstract: km416c1200 MAS 10 RCD 71FC
Contextual Info: SAMSUNG ELECTRONICS INC b?E ]> • 7Tmi4E D01b3ña 731 SMGK CMOS DRAM KM416C1200 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The S am sung KM416C1200 is a CMOS high speed 1,048,576 bit x 16 Dynam ic Random A ccess Memory. Its

KM416C1200

Abstract: TCA 1085 km416c1200j
Contextual Info: CMOS DRAM KM416C1200 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • P e rfo rm a n c e range: The S am sung KM416C1200 is a CMOS h ig h speed 1,048,576 bit x 16 D ynam ic Random A ccess Memory. Its de sig n is op tim ize d fo r high pe rform ance a p p lica tio n s

Contextual Info: PRELIMINARY CMOS DRAM KM416C1200 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KM416C1200 is a CMOS high speed 1,048,576 bit x 16 Dynamic Random Access Memory. Its design is optimized for high performance applications

IR014

Abstract: ABB B45 SD411664400001 I0603B C6050 pbe-4 ic 14069 C611U 8oC51 vadem 468
Contextual Info: S33,S35,R3 4 ,W3 5,A L I 9,AN3 5 FOR VCC PXN142/119 1T C153 100U/6.3V CP7243 JV1 «JP_V R D 025_013 11 1 1 14 92 < P A [3.31i S7d9 7170 vvvv cccc cccc DD VV I §11 40 VV S cc V CA4A ? g CA4B ^ CA3 C R C S A # /C E# CRCSB#/ADSC# CROEA#/OE# CROEB#/ADV# CRWO#

Contextual Info: PRELIMINARY CMOS DRAM KM416C1200 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C1200 is a CMOS high speed 1,048,576 bit x 16 Dynamic Random Access Memory. Its design is optimized for high performance applications

Contextual Info: CMOS DRAM KM416C1200 1 M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C1200 is a CMOS high speed 1,048,576 bit x 16 Dynamic Random Access Memory. Its design is optimized for high performance applications

5362203

Contextual Info: DRAM MODULE 8 Mega Byte KMM5362203W/WG Fast Page Mode 2Mx36 DRAM SIMM , 1K Refresh, 5V Using 1Mx16 BAN DRAM and 1Mx4 Quad CAS DRAM G E N E R A L DESCRIPTIO N FEATURES • Performance Range. The Sam sung KM M 5362203W is a 2M bit x 36 D ynam ic RAM high density m em ory m odule The

KM416C1200

Contextual Info: S A MS UN G E L E C T R O N I C S INC b7E D • KM416C1200 7 T m i 4 E 0 0 1 b 3 ññ 731 CMOS DRAM 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KM416C1200 is a CMOS high speed 1,048,576 bit x 16 Dynamic Random Access Memory. Its

4mx4

Abstract: 24-PIN
Contextual Info: M E M O R Y IC s Dynamic RAM Capacity FUNCTION G UIDE Continued Part Number Organization KM44C4002T Speed(ns) Technology CMOS Static Column CMOS CMOS CMOS Static Column Static Column Static Column CMOS CMOS Static Column Static Column 24 Pin TSOP-ll(Reverse)

1Mx4

Contextual Info: DRAM MODULE 4 Mega Byte KMM5361203W/WG Fast Page Mode 1Mx36 DRAM SIMM , 1K Refresh, 5V Using 1Mx16 B/W DRAM and 1Mx4 Quad CAS DRAM GENERAL DESCRIPTION FEATURES • Performance Range: The Samsung KMM5361203W is a 1M bit x 32 Dynamic RAM high density memory module The