JB 71 Search Results

F-95972

Abstract: TB27 DIN 7967 JB 71
Contextual Info: Ille Rechte Vorbehalten/ All rigkts ris a n i 1,2 \ \ L J L J / Detail. m a t er ia l = nickel silver 0,15 thick 279 Ul 22-SEP-OO 1 7967 1O-MAR-97 U 8 9 8 08-DEC-94 Mod. Dot. JB JB JB Nome Dat. Nun D8-DEC-94 JB Insp. All Dirn, in n Stand. Orig. Size DIN A

JBM L

Abstract: L-52-101 L-52-104
Contextual Info: Passive Delay Lines Delay Range 5-250 nsec STYLE L-52 7-pin SIP 5 equally-spaced taps Compatible With Various Logic Systems including ^ _ 800 nom -•» ♦ 275 MAX jB i G 1 L-52-XXX 1 2 3 4 -H _ 1 - * ►) K 800 n o m - »>| jB i ''l

FLK017XP

Abstract: GaAs FET HEMT Chips
Contextual Info: FLK017XP - GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P-|<jB = 20.5dBm Typ. High Gain: G ^ b = 8.0dB(Typ.) High PAE: riadd = 26%(Typ.) Proven Reliability DESCRIPTION

FLC30

Abstract: FLC307XP fujitsu gaas fet fujitsu hemt
Contextual Info: FLC307XP - GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P-|<jB = 34.8dBm Typ. High Gain: G ^ b = 9.5dB(Typ.) High PAE: r]add = 37%(Typ.) Proven Reliability DESCRIPTION

fujitsu gaas fet

Abstract: FLC257MH-6 QW12
Contextual Info: FLC257MH-6 - C-Band Power GaAs FET FEATURES • • • • • High Output Power: P-|<jB = 34.0dBm Typ. High Gain: G ^ b = 9.0dB(Typ.) High PAE: riadd = 36%(Typ.) Proven Reliability

Contextual Info: ^ k ^Ä P^'CK A RD ELECTRIC DIVISION jiN 0 9 ^ 7 r f & f t f k jb a jb jty p ^ i ~ o ^ general m o t o r s c o r p o r a t io n WARBEN, OHIO □ J TinH * c ü s h i — h n Q H ui m i, c OCO- H I 7 HCOiiiS I-g »' OrW * =*ni!iO 3 3 aZnriT: - r ;3 ^ m Cl 5

Contextual Info: FLC087XP - GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P-|<jB = 28.5dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: r i ^ d = 31.5%(Typ.) Proven Reliability DESCRIPTION

FLK027XP

Abstract: FLK027XV urn 3177 GaAs FET HEMT Chips
Contextual Info: FLK027XP, FLK027XV - GaAs FET & HEMT Chips FEATURES • • • • High O utput Power: P-|<jB = 24.0dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: r iadd = 32% (Typ.) Proven Reliability DESCRIPTION

FLC057WG

Abstract: fujitsu GHz gaas fet fujitsu gaas fet
Contextual Info: FLC057WG - C-Band Power GaAs FET FEATURES • • • • • High Output Power: P-|<jB = 27.0dBm Typ. High Gain: G-j^B = 9.0dB(Typ.) High PAE: r iadd = 38%(Typ.) Proven Reliability

FLC317MG-4

Abstract: S211 fujitsu gaas fet
Contextual Info: FLC317MG-4 - C-Band Power GaAs FET FEATURES • • • • • High Output Power: P-|<jB = 34.8dBm Typ. High Gain: G-j^B = 9.5dB(Typ.) High PAE: r iadd = 37%(Typ.) Proven Reliability

80C152

Abstract: 80C152JA
Contextual Info: irrte* 8XC152JA/JB/JC/JD UNIVERSAL COMMUNICATION CONTROLLER 8-BIT MICROCONTROLLER • 8K Factory Mask Programmable ROM Available ■ Superset of 80051 Architecture ■ 64KB Data Memory Addressing ■ Multi-Protocol Serial Communication I/O Port 2.048 Mbps/2.4 Mbps Max

71M6531

Abstract: 71M6532
Contextual Info: CT/SHUNT \ fW&Wi Ü LOAD NEUTRAL CT JB LOAD • ■fSMW o ADC IAP* IAN* VA IBP* IBN* VB V3.3A V3.3 SYS TERIDIAN 71M6531 71M6532 GNDA GNDD PWR MODE CONTROL WAKE-UP REGULATOR VBAT V2.5 Ì VOLTAGE REF VREF VBIAS SERIAL PORTS TX TEMP SENSOR IR POWER FAULT TX/D I02

Contextual Info: FMCI 718LN-02 FUJITSU Ku, K-Band Power GaAs Modules FEATURES • • • • • • • High Output Power: P-|<jB = 12dBm Typ. High Gain: G-ih r = 13.5dB(Typ.) Low In/Out VSWR Low Noise: NF = 2.5dB (Typ.) Broad Band: 17.7 ~ 18.7GHz Impedance Matched Zin/Zout = 50Q

Beckman resistor network

Abstract: Beckman RESISTOR NETWORKS Beckman Industrial BECKMAN 332 Beckman Industrial RESISTOR NETWORK Beckman Industrial 330 Beckman ser 3615 A 473 G hbic
Contextual Info: BECKMAN INDSTL/ ELEC TECH 44E MM 1 3 3 b b l D D DOOB' l Jb 7 «BIC TkZ-OS f Model L-Series Single In-Line Low Profile Conformal Thick Film Resistor Netw ork 71 / / Electrical S tandard Resistance Range, Ohm s 22 to 1Meg Standard Resistance Tolerance, at 25°C

CD 294

Abstract: FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet
Contextual Info: FLC167WF - C-Band Power GaAs FET FEATURES • • • • • High O utput Power: P-|<jB = 3 1 .8dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 35% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package

Contextual Info: PART NAME PART No. JUNCTION BOX REVISION DATE JB-3957 7-18-11 MATERIAL - 16 GA. [1.5mm] STEEL FINISH - SMOOTH GRAY POWDERCOAT 4.00 101.6 GROUNDING EMBOSS 8.00 203.2 2.00 50.8 2.00 50.8 .50 12.7 5.00 127 8.00 203.2 COVER REMOVED SCREWS: #10-32 x .31"[8mm] LG.

Contextual Info: PART NAME PART No. JUNCTION BOX REVISION DATE JB-3955 7-18-11 MATERIAL - 16 GA. [1.5mm] STEEL FINISH - SMOOTH GRAY POWDERCOAT 4.00 101.6 GROUNDING EMBOSS 6.00 152.4 2.00 50.8 2.00 50.8 .50 12.7 3.00 76.2 6.00 152.4 COVER REMOVED SCREWS: #10-32 x .31"[8mm] LG.

Contextual Info: PART NAME PART No. JUNCTION BOX REVISION DATE JB-3961 7-18-11 MATERIAL - 16 GA. [1.5mm] STEEL FINISH - SMOOTH GRAY POWDERCOAT 6.00 152.4 GROUNDING EMBOSS 10.00 254 2.00 50.8 2.00 50.8 .50 12.7 7.00 177.8 10.00 254 COVER REMOVED SCREWS: #10-32 x .31"[8mm] LG.

E 62320

Abstract: 62320 rectifier E.62320 36MT120A 26mt120a 26MT40A 36MT60A 36MT80A 26MT60A 26MT80A
Contextual Info: t International gü]Rectifier s e r ie s m b SINGLE PHASE BRIDGE & jb Power Modules 10A 25A 35A Features • Universal, 3 way terminals: push-on, wrap around o r solder ■ High thermal conductivity package, electrically insulated case ■ C snier hole fixing

E 62320

Abstract: 100JB-L IRF 725 100JB 26MB-A 36MB-A 250JB-L
Contextual Info: Bulletin I2715 rev. E 08/97 MB & JB SERIES SINGLE PHASE BRIDGE Power Modules Features 10 A 25 A 35 A Universal, 3 way terminals: push-on, wrap around or solder High thermal conductivity package, electrically insulated case Center hole fixing Excellent power/volume ratio

Contextual Info: PR U ILDIM IDIM fflR f in te i 8XC152JA/JB/JC/JD UNIVERSAL COMMUNICATION CONTROLLER 8-BIT MICROCONTROLLER • 8K Factory Mask Programmable ROM Available ■ Superset of 80C51 Architecture ■ Multi-Protocol Serial Communication I/O Port 2.048 Mbps/2.4 Mbps Max

83C152JA

Abstract: JC JB jt
Contextual Info: ß ff ig y iM iß O A B n f 8XC152JA/JB/JC/JD UNIVERSAL COMMUNICATION CONTROLLER 8-BIT MICROCONTROLLER • 8K Factory Mask Programmable ROM Available ■ Superset of 80C51 Architecture ■ 64KB Data Memory Addressing ■ Multi-Protocol Serial Communication

Contextual Info: 8XC152JA/JB/JC/JD UNIVERSAL COMMUNICATION CONTROLLER 8-BIT MICROCONTROLLER • 8K Factory Mask Programmable ROM Available ■ ■ Superset of 80C51 Architecture Multi-Protocol Serial Communication I/O Port 2.048 Mbps/2.4 Mbps Max — SDLC/HDLC Only — CSMA/CD and SDLC/HDLC

Contextual Info: FLR056XV Füjrrsu GaAs FET and HEMT Chips FEATURES • High Output Power: P-|<jB = 26.0dBm Typ. • High Gain: G ^ b = 8.0dB(Typ.) • High PAE: r)adc| = 29%(Typ.) • Proven Reliability DESCRIPTION The FLR056XV chip is a power GaAs FET that is designed for