FLC307XP Search Results

FLC307XP Datasheets (3)

Filter by Manufacturer

Select Manufacturer

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
FLC307XP		Eudyna Devices	TRANS JFET 15V	Original	PDF	49.71KB	4
FLC307XP		Fujitsu	FET, P Channel, ID 1.8 A	Original	PDF	55.15KB	4
FLC307XP-EFLC307XP-E1		Fujitsu	FET: P Channel: ID 1.8 A	Original	PDF	49.7KB	4

FLC307XP Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
GaAs FET HEMT Chips Abstract: FLC307XP C-Band Power GaAs FET HEMT Chips Contextual Info: FLC307XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 34.8dBm Typ. High Gain: G1dB = 9.5dB(Typ.) High PAE: ηadd = 37%(Typ.) Proven Reliability Drain DESCRIPTION Drain Drain Gate Gate Drain Gate Gate Source Source The FLC307XP chip is a power GaAs FET that is designed for	Original	FLC307XP FLC307XP Conditi4888 GaAs FET HEMT Chips C-Band Power GaAs FET HEMT Chips	PDF
fujitsu gaas fet Abstract: FLC307XP C-Band Power GaAs FET HEMT Chips Contextual Info: FLC307XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 34.8dBm Typ. High Gain: G1dB = 9.5dB(Typ.) High PAE: ηadd = 37%(Typ.) Proven Reliability Drain DESCRIPTION Drain Gate Drain Gate Drain Gate Gate Source Source The FLC307XP chip is a power GaAs FET that is designed for	Original	FLC307XP FLC307XP FCSI0598M200 fujitsu gaas fet C-Band Power GaAs FET HEMT Chips	PDF
FLC30 Abstract: fujitsu hemt FLC307XP Contextual Info: FLC307XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 34.8dBm Typ. High Gain: G1dB = 9.5dB(Typ.) High PAE: ηadd = 37%(Typ.) Proven Reliability Drain DESCRIPTION Drain Drain Gate Gate Drain Gate Gate Source Source The FLC307XP chip is a power GaAs FET that is designed for	Original	FLC307XP FLC307XP Conditi4888 FLC30 fujitsu hemt	PDF
C-Band Power GaAs FET HEMT Chips Abstract: fujitsu gaas fet GaAs FET HEMT Chips fujitsu hemt Contextual Info: FLC307XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 34.8dBm Typ. High Gain: G1dB = 9.5dB(Typ.) High PAE: hadd = 37%(Typ.) Proven Reliability Drain DESCRIPTION Drain Gate Drain Gate Drain Gate Gate Source Source The FLC307XP chip is a power GaAs FET that is designed for	Original	FLC307XP FLC307XP FCSI0598M200 C-Band Power GaAs FET HEMT Chips fujitsu gaas fet GaAs FET HEMT Chips fujitsu hemt	PDF
FLC30 Abstract: FLC307XP fujitsu gaas fet fujitsu hemt Contextual Info: FLC307XP - GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P-\|<jB = 34.8dBm Typ. High Gain: G ^ b = 9.5dB(Typ.) High PAE: r]add = 37%(Typ.) Proven Reliability DESCRIPTION	OCR Scan	FLC307XP FLC307XP FCSI0598M200 FLC30 fujitsu gaas fet fujitsu hemt	PDF
CD 294 Abstract: FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet Contextual Info: FLC167WF - C-Band Power GaAs FET FEATURES • • • • • High O utput Power: P-\|<jB = 3 1 .8dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 35% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package	OCR Scan	FLC167WF FLC167WF FCSI0598M200 CD 294 FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet	PDF