FLC057WG Search Results

FLC057WG Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
FLC057WG		Fujitsu	C-Band Power GaAs FET	Original	PDF	88.01KB	4
FLC057WG-E1		Fujitsu	FET: P Channel: ID 0.3 A	Original	PDF	87.98KB	4

FLC057WG Price and Stock

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FUJITSU Limited


FUJITSU Limited FLC057WG RF Small Signal Field-Effect Transistor, 1-Element, Gallium Arsenide
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Chip Stock	FLC057WG		155			1 - 10 - 100 - 1000 - 10000 -	Get Quote

FLC057WG Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
FLC057WG Abstract: fujitsu GHz gaas fet fujitsu gaas fet Contextual Info: FLC057WG - C-Band Power GaAs FET FEATURES • • • • • High Output Power: P-\|<jB = 27.0dBm Typ. High Gain: G-j^B = 9.0dB(Typ.) High PAE: r iadd = 38%(Typ.) Proven Reliability	OCR Scan	FLC057WG FLC057WG FCSI0598M200 fujitsu GHz gaas fet fujitsu gaas fet	PDF
C-Band Power GaAs FET Abstract: FLC057WG Contextual Info: FLC057WG C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 27.0dBm Typ. High Gain: G1dB = 9.0dB(Typ.) High PAE: ηadd = 38%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC057WG is a power GaAs FET that is designed for general	Original	FLC057WG FLC057WG C-Band Power GaAs FET	PDF
FLC057WG Contextual Info: FLC057WG C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 27.0dBm Typ. High Gain: G1dB = 9.0dB(Typ.) High PAE: ηadd = 38%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC057WG is a power GaAs FET that is designed for general	Original	FLC057WG FLC057WG St4888	PDF
Contextual Info: FLC057WG C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 27.0dBm Typ. High Gain: G1dB = 9.0dB(Typ.) High PAE: ηadd = 38%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC057WG is a power GaAs FET that is designed for general	Original	FLC057WG FLC057WG	PDF
Contextual Info: FLC057WG C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 27.0dBm Typ. High Gain: G1dB = 9.0dB(Typ.) High PAE: ηadd = 38%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC057WG is a power GaAs FET that is designed for general	Original	FLC057WG FLC057WG	PDF
FLC057WG Contextual Info: FLC057WG C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 27.0dBm Typ. High Gain: G1dB = 9.0dB(Typ.) High PAE: ηadd = 38%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC057WG is a power GaAs FET that is designed for general	Original	FLC057WG FLC057WG FCSI0598M200	PDF
FLC057WG Contextual Info: FLC057WG C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 27.0dBm Typ. High Gain: G1dB = 9.0dB(Typ.) High PAE: hadd = 38%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC057WG is a power GaAs FET that is designed for general	Original	FLC057WG FLC057WG FCSI0598M200	PDF
FLL57MK Abstract: ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG fll600iq-2 FLL357 fll177 FLL357ME Contextual Info: Wireless Devices: GaAs FETs High Power GaAs FETs Sumitomo Electric has developed 40W - 80W high power Push-Pull GaAs FETs for Mobile Base Station applications such as Cellular, WCDMA, LTE and WiMAX. Additionally, plastic packaged devices are under development for cost driven systems.	Original	FLL810IQ-4C FLL600IQ-2 FLL400IP-2 FLL300IL-1 FLL200IB-1 FLL300IL-2 FLL200IB-2 FLL300IL-3 FLL200IB-3 FLL57MK ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG FLL357 fll177 FLL357ME	PDF