J8 MARKING TRANSISTOR Search Results

DMA364A4

Contextual Info: DMA364A4 Tentative Total pages page DMA364A4 Silicon PNP epitaxial planar type Tr1 Silicon PNP epitaxial planar type (Tr2) For digital circuits Marking Symbol : J8 Package Code : SSSMini6-F2-B Internal Connection 6 5 Absolute Maximum Ratings Ta = 25 °C

transistor j8

Abstract: mobile fm ic J8 marking transistor marking J8
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C TV9018NND03 WBFBP-03B TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION NPN Epitaxial Silicon Transistor B C 1. BASE FEATURES High Current Gain Bandwidth Product fT=1.1 GHz (Typ)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C TV9018NND03 WBFBP-03B TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION NPN Epitaxial Silicon Transistor B FEATURES High Current Gain Bandwidth Product fT=1.1 GHz (Typ)

J8 marking transistor

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C S9018M WBFBP-03B TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION NPN Epitaxial Silicon Transistor B C 1. BASE FEATURES High Current Gain Bandwidth Product fT=1.1 GHz (Typ)

BCX17

Abstract: BCX18R marking of m7 diodes sot 23 marking code T2 sot marking t5 T4 MARKING CODE I8 SOT23 Diode marking m7 t4 u4 BCX17R
Contextual Info: FERRANTI semiconductors BCX17 BCX18 PNP Si licon Planar M e d i u m P o w e r Transistors DESCRIPTION These devices are intended for saturated sw itching, general purpose sw itch in g and driver applications. Com plem entary to the BCX19 and BCX20. Encapsulated in the popular SO T-23 package these devices

Contextual Info: TTamer philips /discrete □ bE D bb53^31 □014T41 T M A IN TEN A N C E TYPE LKE21004R J for new design use LTE21009R MICROW AVE LINEAR POWER TRANSISTOR N-P-N transistor for use in a common-emitter class-A linear power amplifier up to 2,1 GHz. Diffused emitter ballasting resistors, interdigitated structure, multicell geometry and gold sandwich

RTC146

Abstract: IEC134 LKE21004R LTE21009R
Contextual Info: N AMER GbE P H ILIP S /D IS C R E TE D • I bhS3T31 D014141 MAINTENANCE TYPE for new design use LTE21009R T ■ LKE21004R T - iz - o ± r MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor for use in a common-emitter class-A linear power amplifier up to 2,1 GHz.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C S9018M WBFBP-03B TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION NPN Epitaxial Silicon Transistor B C 1. BASE FEATURES High Current Gain Bandwidth Product fT=1.1 GHz (Typ)

S9018M

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C S9018M WBFBP-03B TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION NPN Epitaxial Silicon Transistor B C 1. BASE FEATURES High Current Gain Bandwidth Product fT=1.1 GHz (Typ)

Diodes Marking K7

Abstract: Diodes Marking K6 sot23 marking m8 transistors marking 1p BSS69 marking 1p sot23 Marking b4 SOT23 MARKING l7 MARKING K4 marking H6 sot 23
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LISTA N O DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B

Diodes Marking K6

Abstract: BCX17 Diodes Marking K7 MARKING U1 marking A06 MARKING C4 Marking H2 S4 2A S5 MARKING BCV72
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B BCW65C

smd transistor marking j8

Abstract: SMD TRANSISTOR j8 KST9018 transistor smd marking J8 transistor j8 marking J8 MARKING SMD NPN TRANSISTOR BR
Contextual Info: IC Transistors SMD Type NPN Silicon Transistor KST9018 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 ● power dissipation. PC=200mW 1 0.55 ● High current gain bandwidth product. +0.1 1.3-0.1 +0.1 2.4-0.1 • Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1

Contextual Info: Transistors IC SMD Type Product specification KST9018 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 ● power dissipation. PC=200mW 1 0.55 ● High current gain bandwidth product. +0.1 1.3-0.1 +0.1 2.4-0.1 • Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1

MCD656

Abstract: LWE2025R
Contextual Info: T -3 S -0 5 LWE2025R / V PHILIPS INTERNATIONAL SbE D • 711DflEb DDMbSTb 3Sfl ■ P H I N MICROWAVE LINEAR POWER TRANSISTOR NPN silicon power transistor fo r use in a com m on-emitter, class-A am plifier up to 2.3 GHz in CW conditions in m ilitary and professional applications.

transistor SOT23 J8

Abstract: transistor j8 S9018LT1
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9018LT1 TRANSISTOR NPN SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.05 A ICM: Collector-base voltage

FMMT2222A

Abstract: FMMT-A06 BCV71 BCV72 BCW29 BCW30 BCW31 BCW32 BCW33 BFQ31
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LISTANO DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B BCW65C

transistor t9018

Abstract: 9018 T9018F
Contextual Info: T9018 9018 NPN EPITAXIAL SILICON TRANSISTOR AM/FM IF AMPLIFIER,LOCAL OSCILIATOR OF FM/VHF TUNER * High Current Gain Bandwidth Product fT=1100MHz 1. 1.BASE 2.EMITTER 3.COLLECTOR ABSOLUTE MAXIMUM RATINGS at Ta=25 Rating 2.4 1.3 Unit Vcbo 30 V Collector-Emitter Voltage

transistor SOT23 J8

Abstract: AV9018LT1 transistor j8 S9018LT1 npn sot-23
Contextual Info: @vic SOT-23 Plastic-Encapsulate Transistors AV9018LT1 TRANSISTOR NPN SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current ICM: 0.05 A Collector-base voltage 25 V V(BR)CBO: Operating and storage junction temperature range

transistor t9018

Abstract: 9018 T9018 T9018F transistor 9018 NPN
Contextual Info: T9018 9018 NPN EPITAXIAL SILICON TRANSISTOR AM/FM IF AMPLIFIER,LOCAL OSCILIATOR OF FM/VHF TUNER * High Current Gain Bandwidth Product fT=1100MHz 1. 1.BASE 2.EMITTER 3.COLLECTOR ABSOLUTE MAXIMUM RATINGS at Ta=25 Rating 2.4 1.3 Unit Vcbo 30 V Collector-Emitter Voltage

NPN marking 8e

Abstract: FMMT2222A H9 sot 23 BCV71 BCV72 BCW29 BCW30 BCW31 BCW32 BCW33
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LISTANO DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B BCW65C

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors S9018W TRANSISTOR NPN SOT–323 FEATURES  Small Surface Mount Package MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage

oscilator

Abstract: 2SC2715
Contextual Info: 2SC2715 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 AM/FM IF AMPLIFIER,LOCAL OSCILATOR 1 OF FM/VHF TUNER High Current Gain Bandwidth 2 Product f T =600MHz 1. 1.BASE 2.EMITTER 3.COLLECTOR 0.4 0.95 0.95 2.9 1.9 2.4 1.3 Unit:mm ABSOLUTE MAXIMUM RATINGS o Ta=25 C

2SC3734LT1

Abstract: na 50
Contextual Info: 2SC3734LT1 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 AM/FM IF AMPLIFIER,LOCAL OSCILATOR 1 OF FM/VHF TUNER High Current Gain Bandwidth 2 Product f T =1100MHz 1. 1.BASE 2.EMITTER 3.COLLECTOR 0.4 0.95 0.95 2.9 1.9 2.4 1.3 Unit:mm ABSOLUTE MAXIMUM RATINGS o Ta=25 C

2SC1812

Contextual Info: 2SC1812 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 AM/FM IF AMPLIFIER,LOCAL OSCILATOR 1 OF FM/VHF TUNER High Current Gain Bandwidth 2 Product f T =1100MHz 1. 1.BASE 2.EMITTER 3.COLLECTOR 0.4 0.95 0.95 2.9 1.9 2.4 1.3 Unit:mm ABSOLUTE MAXIMUM RATINGS o Ta=25 C