BC313
Abstract: BC211 tranzystor A 21E J BC313 2BC313 TEWA
Contextual Info: TRANZYSTOR * BC313 7 - 74/2 p-n-p SWW 1156-221 T ra n z y sto r k rz em o w y e p ip la n a rn y sre d n ie j m ocy m aiej czqstotliw oici. J e s t p rzezn aczo n y do sto so w an ia : — w sto p n iac h ste ru j^ c y c h o d c h y la n ia poziom ego o d b io rn ik o w tele w iz y jn y c h
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bc313bc211tranzystora 21e+3j bc3132bc313tewa
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2N4250 motorola
Abstract: bc154 KT501S LOW-POWER SILICON PNP BC313-16
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 20 TMPT956H4 2N5255 2N5256 TMPT812M4 2SA1037KFR 2SA1037KFR MMBA812M6 MMBA812M6 ~~g~~~~~: 25 30 35 . 40 45 50 BC479 2SA733 2SB819 TMPT956H5 2SA493G•TM· Y 2SB435G PN4250 A5T4250 2N4250 MPS4250 D29E7 BC313·1a
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bc1602n3581mmba956h52n5819+9ges5819tp5819d29e6tis932n4250 motorolabc154kt501slow-power silicon pnpbc313-16
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2SA708 NEC
Abstract: MMST8598 150JJ BCW93B motorola BC361-10 LOW-POWER SILICON PNP BC488A 6u sot-23 2SA1283C
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 D29E9 D29E9 TP5821 BCW93A BCW93A 2SA560 BC488 BC488-18 BC488-5 BC488L BC361-10 BC432 BC1Sl-l0 BC303-5 BC303-5 BC303-5 2N2591 BCW97A 2N4032 2NS223 ~~~~ 25 30 35 40 BFT70 BFT80 BFT80 2N4028 MPS751 2N2S03
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d29e9tp5821bcw93a2sa560+13bc488bc488-18bc488-5bc488l2sa708 necmmst8598150jjbcw93b motorolabc361-10low-power silicon pnpbc488a6u sot-232sa1283c
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2SA1005K
Abstract: BC512 2N3644 2N5383 BC251 LOW-POWER SILICON PNP KT310 BC204B 2N601 2SA1005L
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 15 20 MPS3906 MPS3906 MPS3906 NS3906 NTM3906 NTM3906 PET3906 PXT3906 PXT3906 TP5383 YTS3906 2N3906 2N5383 2N5366 2N5366 2N5366 0402 0402 BFY64 2N5367 ~~':5U3~ 25 30 35 40 MPS6533M MMCM2907 MPS6534
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mps3906ns3906ntm3906pet3906+12pxt3906tp53832sa1005kbc5122n36442n5383bc251low-power silicon pnpkt310bc204b2n6012sa1005l
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BC25SB
Abstract: MRF547 S02907A 425M SF231 LOW-POWER SILICON PNP KT361K trw rf NTM2907A MRF549
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO >= HSE141 SF231 SF331 MMBT8598 MMBT2907A PH2907A PN2907A 2N2905A 2N2907A 2N576:r 5 fO ~~~26i07A 20 25 30 ~~h~o~o SCtd MMST2907A MMST2907A NTM2907A NTM2907A NT2907A NT2907A PH2907AR P2N2907A 2N2905AL
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hse141sf231sf331mmbt8598+15mmbt2907aph2907apn2907a2n2905a2n2907a2n576bc25sbmrf547s02907a425mlow-power silicon pnpkt361ktrw rfntm2907amrf549
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2SA1283D
Abstract: bcw56a Motorola 2N3809 LOW-POWER SILICON PNP TO77
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 5 10 BC303-6 BC303-6 2N3579 KT214Gl BCW89 BCW89 BCW89 BCW89R BCW89R BCW89R ~~XIJ2A -15 20 25 30 - 35 40 2N4413A BSR30 BSR30 BCW56A PB6014S 2SBll16AL BC488A18 BC488A5 -SO 60 70 -80 85 -90 95 ~eelnClex See Index
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bc303-62n3579kt214glbcw89+6bcw89r2sa1283dbcw56amotorola 2n3809low-power silicon pnpto77
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aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
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11ta0a12a025aa0290u0u55+16a0291a0292a0305a0306a0a56a0a59aeg diode si 61 laeg diodes d6sgs transistorsbc23bsiliconix u315mz306by126bcv59ac1282n3680
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BTP-128-400
Abstract: blyp22 BTP128 p 181 transoptor CQDP74 BZP683 Bfcp99 UCY74123 BD282 BTP129
Contextual Info: jfifj U N I T P R tS l GEMI E L E M E N T Y P Ö t P R Z E W O D N I K O W E I U K L A D Y S C A L O N E 1 9 7 9 /8 0 KATALOG SKRÖCONY ► • ■■ H U II ■ I S ■ . -. I . . . . . NAUKOWO-PRODUKCYJNE CENTRUM PÖIPRZEWODNIKÖW NAUKOWO-PRODUKCYJNE CENTRUM PÓLPRZEWODNIKÓW
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ns113b31/c4o-116mp-117+16cb-79mp-186cb-68cb-109ce75acb-108btp-128-400blyp22btp128p 181 transoptorcqdp74bzp683bfcp99ucy74123bd282btp129
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BC238 h parameter
Abstract: bc313 BC167 BC231 BC317 BC107 bc101 BC168 BC320 30Hz-15kHz
Contextual Info: CRO BC107,8,9 BC167,8,9 BC237,8,9 BC317,8,9 THE ABOVE TYPES ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS. BC107, 8, 9 are complementary to BC177, 8, 9. BC167, 8, 9 are complementary to BC257, 8, 9.
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bc107bc167bc237bc317+10bc177bc257bc307bc238 h parameterbc313bc231bc101bc168bc32030hz-15khz
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BC167
Abstract: BC107 CE amplifier BC1O7 BC237 complementary hFE Group BC169 bc107 bc168
Contextual Info: BC107,8,9 BC167,8,9 BC237,8,9 BC317,8,9 CRO THE ABOVE TYPES ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS. BC107, 8, 9 are complementary to BC177, 8, 9. BC167, 8, 9 are complementary to BC257, 8, 9.
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bc107bc177bc167bc257+12bc237bc307bc317bc320o-92bo-92fbc107 ce amplifierbc1o7bc237 complementaryhfe groupbc169bc168
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Katalog CEMI
Abstract: OA81 diode byp 660-50r Philips BC147 p 181 transoptor Mullard oa81 Hitachi 12V MS 5A-181 OA81 BA102 diode telefunken hr 780 rds
Contextual Info: WSTIJP W ydaw nictw a Przem yslu M aszynowego WEMA przekazujq uzytkow nikom branzow y katalog pt. E l e m e n t y pólp rz e w o d n i k o w e , zaw ierajqcy dokladne inform acje techniczne dotycz^ce elem entów pólprzew odnikow ych produkow anych w Polsce n a skal^ przem yslow ^. W szystkie w yroby
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katalog cemioa81 diodebyp 660-50rphilips bc147+6p 181 transoptormullard oa81hitachi 12v ms 5a-181oa81ba102 diodetelefunken hr 780 rds
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MH1SS1
Abstract: MHB4011 MH5400S Katalog tesla diod C520D A244D MAC198 MA3006 KF520 B260D
Contextual Info: Prehled diskrétních polovodicovÿch soucástek a dalsích dovâzenÿch typú z nèkdej si RVHP TRANZISTORY TYRISTORY • TRIAKY • DIAKY DIODY • LED • DISPLEJE OPTOCLENY a dalsí prvky . spolu s náhradami . a nej pouzívanéj sí standardní zahranicní soucástky
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roku1984/85mh1ss1mhb4011mh5400s+7katalog tesla diodc520da244dmac198ma3006kf520b260d
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bu2527af
Abstract: wk16412 WK16413 WK16414 Tesla katalog VQE24 VQE14 4DR823B kr206 5DR801B
Contextual Info: Pøehled diskrétních polovodièových souèástek TESLA a dalích dováených typù z nìkdejí RVHP TRANZISTORY TYRISTORY TRIAKY DIAKY DIODY LED DISPLEJE OPTOÈLENY a dalí prvky
spolu s náhradami
a nejpouívanìjí standardní
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roku1984/85vqb200vqb201vqc10+15vqe11vqe12vqe13vqe14vqe21vqe22bu2527afwk16412wk16413wk16414tesla katalogvqe244dr823bkr2065dr801b
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Tr431
Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200
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25t12z1012z1014z1018+16aa138aa140aa142aa200aa21qaa300tr4311n1525cs1256hgbsf17dd0418db6ab1274 transistor1n34a mplt236sn76
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KT 819 transistor
Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
Contextual Info: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e
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kt 819 transistor2n2222a 338sf129dsf137d+6ssy20bkt819wsf127ekfy18 321kp303wkfy18
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APY12
Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Contextual Info: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP
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edition-1978ausgabe-1978bs3934so-26+12ot-114ns371apy12byy32ac176aey26bav77bby20bd545bbav27transistor kt 209 maf367
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KD502
Abstract: KU607 KU605 KFY18 KD503 KF517 KC507 KU608 KD3055 KFY46
Contextual Info: N lZ K O F R E K V E N C N l t r a n z i s t o r y n -p -n M e zn i hodnoty Typ h 21E h2/i>* le so p ii U c b max U cb V Uce V 101N U70 102N U70 103N U70 104N U70 10 20 20 20 20 25 25 25 105N U70 106N U70 107N U70 32 32 32 3 0 ’ 3 0 ') 30') 10 10 10 101NU71
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101nu70102nu70103nu70104nu70+16105nu70106nu70107nu70101nu71102nu71103nu71kd502ku607ku605kfy18kd503kf517kc507ku608kd3055kfy46
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
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BSX19 equivalent
Abstract: BC350 bc107 BFW63 bcw17 SHORT DATA ON 2N744 transistor BC287 2N3020 BC451 2N2868
Contextual Info: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX PRODUCT GUIDE SELECTION GUIDE CROSS REFERENCE HANDLING PRECAUTION QUALITY SURFACE MOUNTING CASE: SOT-23 DATASHEETS PACKAGES Page 4 5 7 9 14 24 25 30 35 419 INTRODUCTION This databook contains datasheets covering the range of discrete devices for small
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ot-23bsx19 equivalentbc350bc107+7bfw63bcw17short data on 2n744transistor bc2872n3020bc4512n2868
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MOLEX-53261-2
Abstract: bridge 45 b 50 20 c1v BC417 travelmate M1621 bc349 asus M24CO2 K0029 BC148 pin configuration BC357
Contextual Info: TRAVELMATE 340 9/14/99 +3.3V +3.3V +3.3V SB_SMI# 99203SC 48.40F01.011 1 4 SB_STPCLK# U75A 1 4 SCD1U16V 1 2 3 7 RN68 BC493 U75B 4 5 CC_SMI# 6 7 TSLCX125 +3.3V 6 SB_NMI 6 SB_SMI# 6 SB_INTR 6 SB_FERR# SB_NMI SB_SMI# SB_INTR SB_FERR# 1 2 3 4 SB_A20M# SB_STPCLK#
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99203sc40f01scd1u16vbc493+14tslcx125tsahct12510kr2100r2molex-53261-2bridge 45 b 50 20 c1vbc417travelmate m1621bc349asusm24co2k0029bc148 pin configurationbc357
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mcl d01 display
Abstract: M1535 a1 wistron winstron BC712 BC179 BC698 oz711 geforce2 MH167
Contextual Info: CPU DDR BUFFER PG.4,5 2M * 32bit*4Bank* 4 PG.15 CRT VGA PG.18 LCD NVIDIA GEFORCE2GO 100/200 LVDS PG.18 TV OUT AGP 4x 1.5v 66MHz PG.6,7,8,9 TV ENCODER CH7007 PG.17 1394 VT6306L PG.28 CARDBUS OZ6912/711E3 PG.25,26 SMART CARD ATA 66/100 MiniPCI PIDE HDD PG.30
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32bit100mhz266mhz66mhz+15ch700733mhzvt6306loz6912/711e38100blmcl d01 displaym1535 a1wistronwinstronbc712bc179bc698oz711geforce2mh167
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bc211
Abstract: bc 574 BC313 J BC211 tranzystor bc2113 TEWA M66-M 2XBC211
Contextual Info: 5 - 74/2 TRANZYSTOR ^ BC211 SWW 1156-221 Tranzystor krzem ow y epiplanartiy sredniej m ocy m alej cz^stotliw oici. Jest przeznaczony do stosow ania: — w stopniach steruj^cych odchylania poziom ego odbiorn ik 6w telew izyjn ych — w stopniach w yjSciow ych w zm acniaczy cz^stotliwoSci
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bc211bc313bc 574j bc211+5tranzystorbc2113tewam66-m2xbc211
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st178
Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
Contextual Info: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech nician and yet economically meet replacement needs of the wide variety of entertainment equipment
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sylvan58mc09a001-0066x0003-00150746a+1568x000368x0003-001t-e013793b3-393b3-4st178diode e1110ck705ecg semiconductor replacement guidecs1237me1120te10881n9421n733adelco dtg-110b transistor
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transistor bc 138
Abstract: bc 301 transistor transistor Bc 287 bc 303 transistor transistor BC 341 transistor BC 388 TRANSISTOR BC 345 transistor bc 144 transistor BC 310 transistor BC 185
Contextual Info: 6 0 9 1 7 8 8 M I C R O E L E C T R O N I C S criiy» as D E Ït.D 'ilT flfl DODDbSS 82 D 0 0 6 5 5 7 Medium Power Amplifiers and Switches POLARITY M AXIM UM RATINGS CASE BC119 BC 138 BC 139 BC 140 BC 141 N N P N N TO-39 TO-39 TO-39 TO-39 TO-39 800 800 700
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bc119to-237to-02melf-002+15melf-006mt-12sto/s-20o-16hs40/s-transistor bc 138bc 301 transistortransistor bc 287bc 303 transistortransistor bc 341transistor bc 388transistor bc 345transistor bc 144transistor bc 310transistor bc 185
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