J 2N918 Search Results

2n3287

Abstract: 2N3294 40244 2N335 2N5851
Contextual Info: 8134693 SEMICOA 40 D e J fll34bc]3 0 G 0 0 1 3 1 7 J ~ - T - a i - C > \ U-H-F AMPLIFIERS Cont’d Electrical Characteristics @ 25°C Maximum Ratings Type NPN PNP 2N3292 2N3293 2N3294 2N918 2N3478 2N2857 210839 2N3600 2N5851 2N5852 2N4252 2N4253 2N3287 2N3288

2N65s

Abstract: 2n907 2N936 2N797 2N706 2N906 2N777 2N945 2N964 2N555
Contextual Info: DIGITRÔN ELECTRONIC CORP 3bE D • 2ñ4St.D7 OOGOOGS 7 ■ • qj DGE'-p Page t,6Î - DIQITRON ELECTRONIC« #2 CORE 110 Hillside Avenue • Springfield, New Jersey 07081 • 201-379-9016 • 201-379-9019 Fax J O H N J. S C H W A R T Z

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

2N918 pin configuration

Abstract: 2SC2570 BF115 2N3933 BF167 BF173 BF180 BF181 2N5179 2N917
Contextual Info: TO-72 — A — J— B — DIM A B C D E F G H J K L f o 1 UJ IL X D MIN MAX 5,24 5,84 4,52 4,95 4,31 5,33 0,40 0,53 0,76 1,14 • 1,39 2,28 2,97 0,91 1,17 0,71 1,22 12,7 12 DEG 48 DEG ALL DIMENSIONS ARE IN M.M. Pin Configuration Available'in TO-72 CDIL Code

2sc2570

Abstract: BF200 transistor BF173 BF167 BF184 2N918 pin configuration BF115 2SC568 BF185 BF180
Contextual Info: TO-72 — A — J— B — DIM A B C D E F G H J K L f o 1 UJ IL X D MIN MAX 5,24 5,84 4,52 4,95 4,31 5,33 0,40 0,53 0,76 1,14 • 1,39 2,28 2,97 0,91 1,17 0,71 1,22 12,7 12 DEG 48 DEG ALL DIMENSIONS ARE IN M.M. Pin Configuration Available'in TO-72 CDIL Code

hy 1607

Abstract: tuned amplifier tetrode transistor 2N918 two transistors yl 1110 2N918 motorola 2n918 transistor ScansUX1007 analysis and design of multiple tuned amplifier
Contextual Info: M O TO RO LA SEMICONDUCTOR TECHNICAL INFORMATION T u n e d A m p lifie r D e s i g n with M o t o r o la ’s M C l l lO In te g r a te d Circuit A m p lifie r J O H N J. R O B E R T S O N , Project Leader, Communications Circuit Research and Development INTRODUCTION

1N5411

Abstract: npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756
Contextual Info: for HF-VHF-UHF-Microwave Applications RF Power Transistors R C A R F Power Transistors for 12.5 Volt Operation Hermetic Ceramic-Metal Stripline Package Flange TYPICAL OUTPUT POWER — WATTS 'j Hermetic Ceramic-Metal Coaxial Package (Large) Hermetic Ceramic-Metal

BFR36

Abstract: 2N3137 manchester encoder BFR99 C22B 2N5109 2N918 BFR99A BFX73 BFY90
Contextual Info: ¿7/ SGS-THOMSON TELECOM AND DATA COMMUNICATIONS H0 £[ 8 IHiOT(MD(gS RF & MICROWAVE TRANSISTORS J S TO 39 40 . 900 MHz CLASS A LINEAR FOR CATV/MATV APPLICATIONS Type PIU Package V(BR) CEO min It (V) (MHz) @ •c c 12e NF (mA) c 22b* (pF) (dB) @ ■c f

SC1674

Abstract: bf 194B BF195D 195D 2N3866 2N917 2N918 SC1730 case to-106
Contextual Info: TELEVISION/VIDEO DEVICES / SEMICONDUCTORS a I.F./R.F. amplifiers and oscillators NPN PNP . Maximum Ratings TYPE Case: SOT-25 Case: To.92 Case:To.106 P d = 250 mW PD=200mW P d = 150 mW @Tac»25*C y /B F i j ^BF BF /B F @ Ta-26*C 194A 194B 195C 195D NPN PNP

Contextual Info: TO-72 DIM D A MIN 5,24 5,84 MAX B 4,52 4,95 C D 4,31 0,40 5,33 0,53 E F - 1,14 0,76 1,39 G 2,28 . 2,97 H 0,91 1,17 J K 0,71 12,7 1,22 - L 12 DEG 48 DEG ALL DIMENSIONS ARE IN M.M. Pin Configuration Available in TO-72 CDIL Code Stylo PIN 1 TO-72 PIN 2 PIN 3

2SC2570

Abstract: BF184 BF180 2N918 pin configuration BF167 TO-72 to72 BF115 BF181 2SC568
Contextual Info: 1 f a i DIM A B C D E F G H J K L MIN 5,24 4,52 4,31 0,40 1,14 2,28 0,91 0,71 12,7 12DEG MAX 5,84 4,95 5,33 0,53 0,76 1,39 2,97 1,17 1,22 48DEG ALL DIMENSIONS ARE IN M.M. Pin Configuration Available' in TO-72 CDIL Code Style PIN 1 TO-72 PIN 2 PIN 3 PIN 4 Emitter

C495 transistor

Abstract: BF194 2N4996 BF194 equivalent BF195 bf357 BF597 BF195 equivalent BF594 transistor c495
Contextual Info: Silect High Frequency Transistors Maximum Ratings Device Type Case outline B V PTOT in brackets CBO ic S j o < hFE Ic BF594 (9) V V mA mW 30 20 30 250 V 1 10 BF595 (9) 30 20 30 250 35 BF597 (9) 40 25 30 360 38 2N4996 (2) T1S02A (2) 30 30 18 50 12 30 250

bf173

Abstract: bf182
Contextual Info: DIM A MIN MAX 5,84 B 5,24 4,52 C D 4,31 0,40 5,33 E - 0,76 4,95 0,53 F 1,14 1,39 G H 2,28 2,97 0,91 0,71 12,7 1,17 1,22 - 12 DEG 48 DEG J K L ALL DIMENSIONS ARE IN M.M. Pin Configuration Available'in TO-72 CDIL Code Style PIN 1 TO-72 PIN 2 PIN 3 PIN 4 Case

BF180

Abstract: BF115 BF167 BF184 2N918 pin configuration BF181 BF185 TO-72 TO72 2N3933
Contextual Info: DIM A B C D E F G H MIN 5,24 4,52 4,31 0,40 1,14 2,28 . 0,91 MAX 5,84 4,95 5,33 0,53 0,76 1,39 2,97 1,17 J K L 0,71 12,7 12 DEG - 1,22 48 DEG ALL DIMENSIONS ARE IN M.M. Pin Configuration Available in TO-72 CDIL Code Style PIN 1 TO-72 PIN 2 PIN 3 PIN 4 Emitter

2N4252

Abstract: 2N5851 2N4936
Contextual Info: 813 469 3 SE MIC OA MG » E | a i 3 M h T 3 D D 0 D 13 1 7 J~-T- a i - O \ U-H-F AMPLIFIERS C o n t’d Maximum Ratings Type NPN PD Ambient Electrical Characteristics @ 25°C Hf e @ ic VCB Volts Vc e V eb Volts Volts Min/Max PNP 200 200 200 200 200 200

Contextual Info: CRIMSON S E M I C O ND UC TO R INC TT •.~>=. •^^ - 2514096 CRIMSON SEMICONDUCTOR 99 D 0 0 2 9 2 D DfViCE TYPl PACKAGE BVCEO BVCBO BVEBO ICBO @ VCB V i M IN IVI M IN (VI M IN («IAI M A X |V| De ( E s m o ^ b INC ' J ~ — 3 & - c>'i COB fT Nf tp tl U A f t

PA6015A

Abstract: 2n2570 KT3101A-2 BF250 SG119 2N1269 2SC1071 2S078 LOW-POWER SILICON NPN PA6015
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 2Nl199A 2N770 2N770 2N3511 2N918 2N1268 2N1271 2N1139 2N728 FMMT2369 2N2~t U 15 20 2N1006 2Nl199 PN5131 PN5131 PN5131 2N476 2N1417 2N1663 2N5131 ~~~~~ 25 30 2N771 MPS5131 MPS5131 AST5220 2N5220 BF250 04024 A5T5219

2N918 motorola

Abstract: 2N918 MHQ918 MHQ918H MHQ918HX MHQ918HXV MIL-STD-750 2072 14NB
Contextual Info: I MHQ918 MHQ918H MHQ918HX MHQ918HXV I I I I QUAD DUAL NPN HERMETIC HIGH FREQUENCY designed for low-level, Low Noise Figure fT= 850 Transistors IC Automatic applications. Product — to 2N918 Package — Compact Insertion for Hi-Rel See Tables MAXIMUM amplifier

Contextual Info: 2N918JAN, JTX, JTXV, JA N S processed per M IL-S-19500/301 NPN Silicon Small-Signal Transistor C R YSTA IO N C S 2805 Veterans Highway Suite 14 Ronkonkoma. N Y . 11779 de^Ç'ieO lor uRta hiof fr«qu*ncy ampi.fier dKxcationE M AXIM UM R A T IN G S AatkftQ Coi«cl X E m * * V04UQ«

2n918 transistor

Abstract: 2N918 2N918A IEC134
Contextual Info: N AMER PHILIPS/DISCRETE 5SE D • ^53=131 □□lflESl S ■ 2N918 Jl T " 3 1- I S' N-P-N H.F. WIDEBAND TRANSISTOR N-P-N transistor in TO-72 metal envelope with insulated electrodes and a shield lead connected to the case. The 2N918 is primarily intended for low power amplifiers and oscillators in the v.h.f. and u.h.f.

OA 191

Abstract: 2N918 semelab
Contextual Info: Illl = ^ = Illl 2N918CSM SEME LAB GENERAL PURPOSE, SMALL SIGNAL NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dim ensions in mm inches FEATURES 0.51 ±0.10 (0.02 ±0.004) (0 .0 1 2 )

2N3572

Abstract: 2N918 DN-2001 DN918 geometry 450
Contextual Info: TRANSISTOR CHIPS 2 HIG H-FREQ UENCY S M A LL SIG N AL NPN 100% Probe Tested to These Parameters @ 25°C n FE V ro V:30 V o lli Min. <9>Vc e =1V @ lc = 1 uA lQ = 3 m A l[= 0 20 2N918 M IN 100 M IN DN918 V f 80 •CBO V o lls M in. @ ls = 3m A V olts M in. 10. A

2N918 motorola

Contextual Info: 2N918 JAN, JTX, JTXV AVAILABLE CASE 20-03, STYLE 10 TO-72 {TO-206AFJ M A X IM U M R ATING S 3 C ollector Symbol Rating Value Unit C ollecto r-E m itte r V oltag e VCEO 15 Vdc Co Ilector-B ase V oltage VCBO 30 Vdc E m itter-B ase V oltag e v EBO 3.0 Vdc ic

2N918

Abstract: 2N918 thermal resistance 2N918 oscillator
Contextual Info: 2N918 HIGH-FREQUENCY OSCILLATORS AND AMPLIFIERS DESCRIPTION The 2N918 is a silicon planar epitaxial NPN transistors in Jedec TO-72 metal case. It is designed for low-noise VHF amplifiers, oscillators up to 1 GHz, non-neutralized IF amplifiers and non-saturating circuits with rise and fall times of less than 2.5 ns.