IRFMG40 Search Results
IRFMG40 Datasheets (4)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| IRFMG40 | International Rectifier | Power MOSFET Thru-Hole (TO-254AA) | Original | 480.46KB | 7 | ||
| IRFMG40 | International Rectifier | HEXFET Power Mosfet | Scan | 215.47KB | 8 | ||
| IRFMG40D | International Rectifier | N-Channel Hexfet Transistor, 1000 Volt, 3.5 Ohm | Scan | 439.91KB | 8 | ||
| IRFMG40U | International Rectifier | N-Channel Hexfet Transistor, 1000 Volt, 3.5 Ohm | Scan | 439.92KB | 8 |
IRFMG40 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: PD - 90710B POWER MOSFET THRU-HOLE TO-254AA IRFMG40 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFMG40 R DS(on) ID 3.5Ω 3.9A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The |
Original |
90710bo-254aairfmg40mil-prf-19500 | |
AG QC TRANSISTOR
Abstract: 710a IRFMG40
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OCR Scan |
irfmg40irfmg40dirfmg40uo-254+4 | |
IRFMG40Contextual Info: PD - 90710B POWER MOSFET THRU-HOLE TO-254AA IRFMG40 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFMG40 R DS(on) ID 3.5Ω 3.9A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The |
Original |
90710bo-254aairfmg40mil-prf-19500 | |
IRF460
Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
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Original |
30am-544-0-1737-2comdb8029cirf460+9 | |
710a
Abstract: IRFMG40 IRFMG40D IRFMG40U
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OCR Scan |
irfmg40irfmg40dirfmg40uo-254+2 | |
IRFM9034
Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
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Original |
irhe7110irhe7130irhe7230irhe8110+13 | |
irfm9034Contextual Info: 1 I n t e r n a t io n a l R e c t if ie r Government and Space Products Pvt Numb« 2 (3) bvdss (Vote) RDS(on) (Ohms) ID« Tc*2T (Amps) 10« TC=100“ (Amps) Pd O Tc«25° (Watts) Fax-onOamand Number Case Styl«, (Cas* (Min») (1) HEXFET Power MOSFETs Hermetic Package, N- and P-Channel |
OCR Scan |
irfaf30irfaf40irfaf50irfag30+7 | |
2N7334
Abstract: irfg9110 H24 SMD
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OCR Scan |
irhe7110irhe8110irhe7130irhe8130+9 | |
10RIA10
Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
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Original |
do-203aahfa40hf120hfa40hf60o-254aa+15 | |
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Contextual Info: International Government and Space HEXFET Power MOSFETs XORlRe cB fie r Hermetic Package N & P Channel Case •d @ TP = 25°C lp @ Tq = 100°C R thJC Max. Pd @ TC = 25°C Outline A (K/W) (W) Number (1) 0.04 (*> 35 28 1.0 125 0.027 35 35 0.83 150 60 0.017 |
OCR Scan |
irfm044irfm054irfm064irfm140+6 | |
Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
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Original |
2c4152c4252c4442c746+16 | |
2N7550
Abstract: 2N7549 2n7545 2N7476T1 smd 92112 2N7546 IRHNJ9130SCS 2N7471 2N7426 2N7468
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Original |
2n75502n75492n75452n7476t1+6 | |
2N6764 JANTX
Abstract: 91447 IR2113L
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Original |
irh7054irh7130irh7150irh7230+9 | |
0535tContextual Info: Data Sheet No. PD-9.710A INTERNATIONAL RECTIFIER I O R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFMG4Q Product Summary 1000 Volt, 3.5 Ohm HEXFET T h e H E X F E T ® technology is th e key to International Part N um ber R D S on BVq s S |
OCR Scan |
irfmg40dirfmg40uo-254mils-19500+2 | |
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2N6782 JANTX
Abstract: 2N6758 JANTX 2N6756 JANTX 2N6766 JANTX 2N6792 JANTX 2N6796U 60022 2N7236 2n6806 jantx 2N6770 JANTX
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Original |
irh7054oct-96irh7150irh7250+13 | |