IRF9511
Abstract: IRF9Z15 IRF9613 IRF9632 IRF9631 IRF9643 IRF9642 IRF9641
Contextual Info: FUNCTION GUIDE POWER MOSFETs TO-220 P-CHANNEL B Vdss V Part Number ID(onXA) RDS(onXn) -4 .0 0 -4 .7 0 -8 .9 0 -9 .8 0 -15 .0 0 -18 .0 0 0.70 0.50 0.33 0.28 0.21 0.14 IRF9Z12 IRF9Z10 IRF9Z22 IRF9Z20 IRF9Z32 IRF9Z30 - 60.00 -2 .5 0 -3 .0 0 -4 .0 0 -4 .7 0
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o-220irf9z12irf9z10irf9z22+12irf9z20irf9z32irf9z30irf9513irf9511irf9z15irf9613irf9632irf9631irf9643irf9642irf9641
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THERMISTOR NTC 100K
Abstract: tip42a 2N7000 "direct replacement"
Contextual Info: U-509 Using the bq2007 Enhanced Features for Fast Charge voltage threshold MCV . To avoid possible premature fast-charge termination when charging batteries after long periods of storage, the bq2007 disables PVD, and -∆V detection during a short “hold-off” period at the start
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u-509bq2007bq200customerthermistor ntc 100k+2tip42a2n7000 "direct replacement
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irf9110
Abstract: SOT-123 IRF224 irf113 1rf48 BUZ10 BUZ63 IRF9122 irfl33 IRF034
Contextual Info: - 250 - Ta=25<1C f m € tt € t Vd s or 4- V d g Vg s (V) (V) If l: * /CH * /CH (A) (W) V g s th) 1DSS Jg s s Pd Id max (nA) Vg s (V) C m A) Vd s (V) (V) (V) Id (mA) ff] % ft 1± Ciss (max) *typ V g s ( 0 ) (V) *typ (A) Id (A) 140* -25 TO-220AB 190* 25 TO-220AB
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1rf9z32o-220ab1rf48irf034+12buz171o-220ftbirf120to-204aairf9110sot-123irf224irf113buz10buz63irf9122irfl33
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SOT-123
Abstract: IRF9110 PHILIPS TO220 blf544b BLF246 BLF348 irc224 IRC350 IRC530 IRC832
Contextual Info: - % % A f ft i Vd s or Vd g tt £ i T Vg s Ta=25'C) «É. Ig s s Id Pd * /C H * /CH (W) Vds (V) Id (nA) g fs Io(on) C ís s Coss ft B m ♦typ Vg s (V) (0) Id (A) * ty p (A) Vg s (V) *typ (S) Id (max) (max) (max) % (A) (pF) (pF) (pF) Vd s (V) % (V) P '200 ± 2 0
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2k6847o-205af2n68492n6851+15ot-268bif548ot-262irf9z10o-220sot-123irf9110philips to220blf544bblf246blf348irc224irc350irc530irc832
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IRF9Z30
Abstract: IRF9Z32 a510a RF92
Contextual Info: HE 0 I MflSSMSE Q000b3b 4 | Data Sheet No. PD-9.471A INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IO R IRFSZ30 IRFSZ32 P-CHANNEL 5 0 VOLT POWER MOSFETs Features -50 Volt, 0.14 Ohm, HEXFET T0-220AB Plastic Package The HEXFET® technology is the key to International Rectifier’s
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t0-220abc-390irf9z30irf9z32+2a510arf92
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IRf 444 MOSFET
Abstract: DIODE Z32 irf9z34 IRF9Z30 irf9z34 mosfet IRF z34 MOSFET IRF high current p-channel P-channel power mosfet irf IRF9Z35 IRf 444
Contextual Info: SAMSUNG ELECTRONICS INC fc^E D • 7^4142 IRF9Z34/Z35 IRF9Z30/Z32 □ □ 1 2 2 Iìc T77 M S U G K P-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R ds <on > Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure
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irf9z34/z35irf9z30/z32irf9z30irf9z34+9irf9z32irf9z35irf 444 mosfetdiode z32irf9z34 mosfetirf z34 mosfetirf high current p-channelp-channel power mosfet irfirf 444
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1rf730
Abstract: IRF9513 IRF9521 irfbf30 IRFBG30 THOMSON DISTRIBUTOR 58e d IRF9511 IRF9523 IRFBC30 IRFBE32
Contextual Info: THO d SO N/ D I S T R I B U T O R SflE D • T02t.ñ73 0 D D S Ô D 2 52S ■ International Rectifier TCSK HEXFET Power MOSFETs Plastic Insertable Package TO-220 N-Channel >DM Pu'*« Drain Current Amps Pp Max Power Dissipation (Watts) 1.7 2.0 2.8 3.3 4.5
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o-220irf712t0-22qabirf710+16irf722irf720irf732irf730irf742irf7401rf730irf9513irf9521irfbf30irfbg30thomson distributor 58e dirf9511irf9523irfbc30irfbe32
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1RF9Z30
Abstract: irf9z34 IRF9Z30
Contextual Info: IRF9Z34/Z35 IRF9Z30/Z32 P-CHANNEL POWER MOSFETS FEATURES • Lower Rds <on • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance • Extended safe operating area • Improved high temperature reliability
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irf9z34/z35irf9z30/z321rf9z30irf9z34+3irf9z32irf9z35irf9z30
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MTM13N50E
Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
Contextual Info: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”
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buz10buz11buz11abuz11s2+16buz15buz171buz20buz21buz23buz31mtm13n50ep40n1024n40p50n058n50epower mosfet cross reference guidemotorola 20n50etp50n05eirf510 mosfet irf64033n10e
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IC LM317 CIRCUITS
Abstract: PHILIPS ntc 640 197-103LA6-A01 keystone carbon b*137 tco thermistor 78L05 datasheet benchmarq Keystone RL0703-5744-103-S1 philips carbon film resistor
Contextual Info: Using the bq2003 to Control Fast Charge The bq2003 monitors the voltage across the battery to detect -∆V, which is a very reliable charge terminator for NiCd batteries. -∆V detection in the bq2003 may be temporarily disabled during periods when the charge current fluctuates
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bq2003ic lm317 circuitsphilips ntc 640197-103la6-a01+7keystone carbonb*137tco thermistor78l05 datasheetbenchmarqkeystone rl0703-5744-103-s1philips carbon film resistor
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equivalent transistor LM317T
Abstract: Philips 2322-640-63103 ba2003 U1 LM317 ln4148-type 78L05 cv
Contextual Info: BENCHMARQ_ Using the bq2003 to Control Fast Charge Introduction This application note describes the use and functions of the bq2003 gating a current source to fast charge NiCd or NiMH batteries. Examples describe th e ease with which the bq2003 is incorporated into applications.
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bq2003equivalent transistor lm317tphilips 2322-640-63103ba2003+3u1 lm317ln4148-type78l05 cv
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Fenwal NTC
Abstract: philips carbon film resistor BQ2003 Applications HLMP-4700 layout for LM317 keystone carbon thermistor pcb layout for LM317 BQ2003 IRFR9020 Keystone RL0703-5744-103-S1
Contextual Info: U-505 Using the bq2003 to Control Fast Charge The bq2003 monitors the voltage across the battery to detect -∆V, which is a very reliable charge terminator for NiCd batteries. -∆V detection in the bq2003 may be temporarily disabled during periods when the charge current fluctuates
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u-505bq2003fenwal ntcphilips carbon film resistor+7bq2003 applicationshlmp-4700layout for lm317keystone carbon thermistorpcb layout for lm317irfr9020keystone rl0703-5744-103-s1
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blf544b
Abstract: IRF224 IRF48 IRF9110 usb pre amplifier circuit diagram IRF035 irf113 IRF034 IRF123 blf245
Contextual Info: - 250 - m € tt € f Ta=25<1C t Vds Vg s or 4- Vdg Id If 1RF9Z32 IRF48 IRF034 IRFQ35 1RF044 IRF045 1RF120 IRF121 IRF122 IRF123 IRFI30 IRF131 IRF132 IRFI33 IRF14Û IRF141 IRFI42 IRF143 IRF150 IRF151 IRF152 IRF153 IRF220 IRF221 IRF222 IRF223 IRF224 IRF225
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1rf9z32o-220ab1rf48irf034+14ot-268bif548ot-262irf9z10o-220blf544birf224irf48irf9110usb pre amplifier circuit diagramirf035irf113irf123blf245
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78L05 TO 220
Abstract: bargraph LCD LED BARGRAPH pin configuration 4.5 digits lcd display low bat 78L05 D2 PACK IRF9Z20 IRF9Z22 IRFD9014 IRFD9024 IRFR9010
Contextual Info: Using the bq2007 Enhanced Features for Fast Charge threshold TCO , a safety time-out, and a maximum cell voltage threshold (MCV). To avoid possible premature fast-charge termination when charging batteries after long periods of storage, the bq2007 disables PVD, and
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bq20071n54001n41481n751a+121n58211n400178l05 to 220bargraph lcdled bargraph pin configuration4.5 digits lcd display low bat78l05 d2 packirf9z20irf9z22irfd9014irfd9024irfr9010
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irf9110
Abstract: SOT-123 BLF245 BLF246B sot 123 SOT123 philips ID 35 BLF242 BLF245B BLF246
Contextual Info: - Ta=25°C f SJ € tí: Vd s or « i Vd g % (V) ft % Vg s & tí Iü(on) Vd s - Ciss g fs Coss Crss * /CH * /CH m ax Vg s (A) m (nA) (V) (max) Vd s CuA) (V) (V) *typ Id (mA) (V) S* fé ffi n V g s =0 Vg s (V) (0) Vg s (V) *typ Id (A) Vg s (V) (A) *typ Id
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blf242ot-123bif244blf245+13ot-268bif548ot-262irf9z10o-220irf9110sot-123blf246bsot 123sot123philips id 35blf245bblf246
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Q2N4401
Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Contextual Info: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog
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rd91ebq2n4401d1n3940q2n2907a+7d1n1190q2sc1815q2n3055q2n1132d1n750d02cz10d1n751
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DIODE Z32
Abstract: IRF9Z30
Contextual Info: P-CHANNEL POWER MOSFETS IRF9Z30/Z32 FEATURES • • • • • • • Lower Rds ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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irf9z30/z32irf9z30irf9z32--15a+1diode z32
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IFRZ44
Abstract: IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N
Contextual Info: PRODUCT INDEX ALPHA NUMERIC INDEX Part numbers In BOLD are preferred standard parts. PART NO. 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRFS30 IRF531 IRF532 IRF533 IRF540 IRF541
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2n39042n39062n44002n4401+162n44022n44032n50872ns0882ns5512n6s15ifrz44irfz43ka3842dirf510 switchtransistor mc7805ctka336ztransistor mc7812cthigh voltage pnp transistor 700virfz44 pnpks82c670n
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tw 7 charging circuits
Abstract: 78L05 TO-220 MTP23P06E
Contextual Info: |5 j benchmarq_ Using the bq2007 Enhanced Features for Fast Charge Introduction This application note describe« the correct setup of the bq2007 features and gives design examples for a NiCd or NiMH switch-mode and gated current source fast charger
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bq2007dv2007s11n54001n4148+51n751a1n5821tw 7 charging circuits78l05 to-220mtp23p06e
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