IRF23 Search Results

IRF23 Datasheets (121)

Filter by Manufacturer

Select Manufacturer

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IRF230	Harris Semiconductor	Power MOSFET Selection Guide	Original	PDF	41.91KB	1
IRF230	International Rectifier	HEXFET Power Mosfet	Original	PDF	149.87KB	7
IRF230	Intersil	8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 ?, N-Channel Power MOSFETs	Original	PDF	71.12KB	7
IRF230	Semelab	N-Channel Enhancement Mode High Voltage Power MOSFET	Original	PDF	22.39KB	2
IRF230	Fairchild Semiconductor	N-Channel Power MOSFETs, 12A, 150-200 V	Scan	PDF	181.78KB	6
IRF230	Frederick Components	Power MOSFET Selection Guide	Scan	PDF	204.39KB	4
IRF230	General Electric	Power Transistor Data Book 1985	Scan	PDF	132.08KB	2
IRF230	General Electric	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A.	Scan	PDF	163.94KB	5
IRF230	Harris Semiconductor	Power MOSFET Data Book 1990	Scan	PDF	195.73KB	6
IRF230	International Rectifier	TO-3 N-Channel Hexfet Power MOSFETS	Scan	PDF	42.42KB	1
IRF230	Motorola	Switchmode Datasheet	Scan	PDF	66.21KB	1
IRF230	Motorola	European Master Selection Guide 1986	Scan	PDF	34.41KB	1
IRF230	Motorola	TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39	Scan	PDF	638.03KB	19
IRF230	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	37.22KB	1

IRF230	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	37.22KB	1
IRF230	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF	122.11KB	1
IRF230	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	101.3KB	1
IRF230	Unknown	FET Data Book	Scan	PDF	217.66KB	4
IRF230	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF	137.02KB	1
IRF230	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF	160.57KB	1

...

IRF23 Price and Stock

Filter by Manufacturer

Select Manufacturer


International Rectifier IRF234 IRF234
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical ()	IRF234		365		253	1 - 10 - 100 - 1000 $1.49 10000 $1.49	Buy Now
	IRF234		350		253	1 - 10 - 100 - 1000 $1.49 10000 $1.49	Buy Now
Rochester Electronics	IRF234		789		1	1 - 10 - 100 $1.19 1000 $0.99 10000 $0.88	Buy Now
Component Electronics, Inc	IRF234		6			1 - 10 - 100 - 1000 - 10000 -	Buy Now
International Rectifier IRF230 Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) TO-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	IRF230		3,848		1	1 $13.20 10 $12.14 100 $10.69 1000 $10.69 10000 $10.69	Buy Now
Quest Components ()	IRF230		144			1 $13.50 10 $13.50 100 $8.32 1000 $7.42 10000 $7.42	Buy Now
	IRF230		1			1 $15.07 10 $15.07 100 $15.07 1000 $15.07 10000 $15.07	Buy Now
Vishay Siliconix IRF230 Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) TO-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	IRF230		8			1 - 10 - 100 - 1000 - 10000 -	Get Quote
New Jersey Semiconductor Products Inc IRF230 N-CH 75W 200V GFS=3-9S 0.400 OHMS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	IRF230		3,073			1 $14.30 10 $14.30 100 $14.30 1000 $11.55 10000 $11.00	Buy Now
Microsemi Corporation IRF230 N-CH 75W 200V GFS=3-9S 0.400 OHMS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	IRF230		25			1 $15.30 10 $11.47 100 $9.95 1000 $9.95 10000 $9.95	Buy Now

Find more IRF23 price and stock on Findchips.com

IRF23 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
TO-254 Abstract: T0-204 IRF450 equivalent Contextual Info: CT'Sificonix .X J P in c o r p o r a te d Industry Standard Military MOSFETs Package Equivalent Commercial Part Number 0.18 75 T0-204 IRF130 542 9.0 0.40 75 T0-204 IRF230 542 400 5.5 1.0 75 TO-204 IRF330 542 500 4.5 1.5 75 TO-204 IRF430 542 Part Number V BRJDSS	OCR Scan	2n6756 2n6758 2n6760 2n6762 +92n6764 2n6766 2n6768 2n6770 2n6788 2n6790 to-254 t0-204 irf450 equivalent	PDF
CMD8 Contextual Info: IRF232 IRF233 IRF630 By IRF631 Its IRF632 IRF633 2N6759 IRF330 IRF331 IRF333 IRF730 IRF731 Nola1: Non-JEDEC registered valua. lD@ = 25°C Tc 'ro = 100°C VGS th Id e(mA) (V) Min Max R[)S(oo) • d (ft) e (A) (nC) Max Ch. <PF) Con <PF) CtM Proc. Max (PF)	OCR Scan	dd3711b t-39-01 cmd8	PDF
IRF232 Abstract: IRF233 Contextual Info: FIT FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged ness and reliability. IRF232,233 8.0 AMPERES 200,150 VOLTS	OCR Scan	irf232 00a//usec irf233	PDF
250M Abstract: IRF240 Contextual Info: electrical characteristics T q - 2 5 ° C (unless otherwise specified) CHARACTERISTIC [ off characteristics Drain-Source Breakdown Voltage IRF230/D86DN2 (VGS = 0V, lD = 250 ,uA) IRF231/D86EM2 Zero Gate Voltage Drain Current (Vps = Max Rating, VGs = 0V, T c = 25°C)	OCR Scan	irf230/d86dn2 irf231/d86em2 00a//usec 250m +1irf240	PDF
IRF230 Contextual Info: IRF230 TO–3 TO–204AA Package Outline. Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42)	Original	irf230 204aa 00a/ms	PDF
irf234 n Abstract: TA17413 Contextual Info: IRF234, IRF235, IRF236, IRF237 S E M I C O N D U C T O R 8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 8.1A and 6.5A, 275V and 250V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power	Original	irf234 irf235 irf236 irf237 +2ta17413 irf234 n	PDF
IRF232 Abstract: IRF230 IRF231 IRF233 TB334 Contextual Info: IRF230, IRF231, IRF232, IRF233 Semiconductor 8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 8.0A and 9.0A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power	Original	irf230 irf231 irf232 irf233 +1tb334	PDF
irf234 n Abstract: irf*234 n IRF236 IRF234 IRF237 IRF235 TB334 Contextual Info: IRF234, IRF235, IRF236, IRF237 Semiconductor 8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 8.1A and 6.5A, 275V and 250V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power	Original	irf234 irf235 irf236 irf237 +3irf234 n irf*234 n tb334	PDF
F233 Abstract: IRF230 Contextual Info: 7964142 k \| 7WHS OGOSG^HSf SAMSUNG SEM ICON DU CTOR I N C _ 98D 0 5 0 9 4 _D T * 3 V l I "-CHANNEL POWER MOSFETS IRF230/231/232/233 FEATURES LOW RDS on Improved inductive ruggedness Fast switching times Rugged poiysilicon gate cell structure Low input capacitance	OCR Scan	irf230/231/232/233 irf231 00gs435 f233 +1irf230	PDF
irf*234 n Abstract: IRF235 sm 4205 IRF234d GE-X8 Contextual Info: IRF234, IRF235 IRF236, IRF237 21 HARRIS N-Channel Power MOSFETs Avalanche-Energy Rated May 1992 Package Features T O -2 0 4 A A • 8.1A and 6.5A, 275V - 250V B O T T O M VIEW • rD S °n = 0 -4 5 0 and 0 .6 8 ÎÎ • Single Pulse Avalanche Energy Rated	OCR Scan	irf234 irf235 irf236 irf237 +4irf*234 n sm 4205 irf234d ge-x8	PDF
MTP20N10 Abstract: 1RF531 Contextual Info: NATL N-Channel Power MOSFETs Continued 2N67S5 2N6756 IRF130 IRF132 IRF133 IRF530 S 1-6 IRF532 IRF533 MTP20N10 2N6757 IRF230 IRF231 lD @ TC = 25 'C (A) •rD Tc = 100-C (A) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-2Û4AA (42) TO-204AA	OCR Scan	2n67s5 2n6756 irf130 irf131 +7irf132 irf133 irf530 1rf531 irf532 irf533 mtp20n10	PDF
Contextual Info: IRF233R Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)150 V(BR)GSS (V)20 I(D) Max. (A)8.0 I(DM) Max. (A) Pulsed I(D)5 @Temp (øC)100 IDM Max (@25øC Amb)32 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-55õ	Original	irf233r	PDF
Contextual Info: IRF237 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)275 V(BR)GSS (V)20 I(D) Max. (A)6.5 I(DM) Max. (A) Pulsed I(D)4.1 @Temp (øC)100 IDM Max (@25øC Amb)26 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-55õ	Original	irf237	PDF
IRF150 To220 package Abstract: irf150 to220 IRFP240 xg32 ULTRA FAST RECOVERY RECTIFIERS to-220 irf64d to-3p 1500V IRF122 IRF123 IRF131 Contextual Info: FREDERICK COMPONENTS MIE 3> • 37n4ñS Q0D01b3 5 M F C I A CORTON CO M PA N Y C POWER MOSFETs P ART-N O IRF120 IRF122 IRF123 IRF130 IRF131 IRF132 IRF133 IRF140 IRF141 IRF142 IRF143 IRF150 IRF151 IRF152 IRF153 IRF220 IRF221 IRF222 IRF223 IRF230 IRF231 IRF232	OCR Scan	q0d01b3 irf120 irf122 irf123 +13irf130 irf131 irf132 irf133 irf140 irf141 irf150 to220 package irf150 to220 irfp240 xg32 ultra fast recovery rectifiers to-220 irf64d to-3p 1500v	PDF

Contextual Info: IRF230, IRF231, IRF232, IRF233 Semiconductor 8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 8.0A and 9.0A, 150V and 200V • High Input Impedance These are N-Channel enhancement mode silicon gate	OCR Scan	irf230 irf231 irf232 irf233	PDF
irf*234 n Contextual Info: HARRIS SEMICOND SECTOR 40E » • 430 2 2 7 1 GOBM'RQH b « H A S 33 HARRIS IR F234, IRF235 IR F236, IR F237 August 1991 N-Channel Power MOSFETs Avalanche-Energy Rated l\ Features Package T 0 -2 0 4 A A • 8.1A and 6 .SA, 2 7 5 V - 2 5 0V • rD S o n =	OCR Scan	irf235 irf234 irf236 irf237 +2rf234 irf*234 n	PDF
irf230 Abstract: IRF2301 irf232 Contextual Info: IRF230, IRF231, IRF232, IRF233 S E M I C O N D U C T O R 8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 8.0A and 9.0A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power	Original	irf230 irf231 irf232 irf233 +2ta17412 irf2301	PDF
Contextual Info: IRF233 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)150 V(BR)GSS (V)20 I(D) Max. (A)8.0 I(DM) Max. (A) Pulsed I(D)5 @Temp (øC)100 IDM Max (@25øC Amb)32 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-55õ	Original	irf233	PDF
Contextual Info: IRF236 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)275 V(BR)GSS (V)20 I(D) Max. (A)8.1 I(DM) Max. (A) Pulsed I(D)5.1 @Temp (øC)100 IDM Max (@25øC Amb)32 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-55õ	Original	irf236	PDF
sm 0038 Abstract: 250M IRF230 IRF231 Contextual Info: F U IRF230.231 D86DN2,M2 T 9.0 AMPERES 200,150 VOLTS Rd S ON = 0.4 n RELD EFFECT POWER TRANSISTOR This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged	OCR Scan	irf230 p86pn2 00a///sec sm 0038 +2250m irf231	PDF
Equivalent IRF 44 Abstract: sony 2sj54 VN0109N3 irf 80 n BUZ44 VN0104N5 2SJ54 irf 44 n VN0108N2 VN0104N1 Contextual Info: Siliconix 1-1? f l CO CO COCO Ol o LL. U . t t ù i • ■ N M C O M «M O LL. U . IRF230 ■ IRF231 - IRF232 ■ IRF233 IRF630 ■ IRF631 - IRF632 ■ IRF633 200VMOSPOWER These power FETs are designed especially for switching regulators, power converters,	OCR Scan	o-220 vn1000d irf522 vn1000a +13irf540 irf632 irf640 equivalent irf 44 sony 2sj54 vn0109n3 irf 80 n buz44 vn0104n5 2sj54 irf 44 n vn0108n2 vn0104n1	PDF
ZO 150 Abstract: dg1u IRF230 1RF232 IRF231 IRF232 IRF233 IRF23 ic l00a S101 Contextual Info: 01 J E 1 3fl7S0öl DG1Ü2Ö4 S \| ~ 0 ^ 3 *9 -/I SOLID STATE 01E 18284 3875081 G E a ta n a a ra ro w e r M O S FE Ts IRF230, IRF231, IRF232, IRF233 File Number 1568 Power MOS Field-Effect Transistors N -CH A NN EL E N H A N C EM EN T MODE N-Channel Enhancement-Mode	OCR Scan	irf230 irf231 irf232 irf233 +850v-200v if230 zo 150 dg1u 1rf232 irf23 ic l00a s101	PDF
IRF230 Contextual Info: IRF230 TO–3 TO–204AA Package Outline. Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42)	Original	irf230 204aa irf230-jqr-b irf230smd +3irf230smd-jqr-b irf230x o276ab	PDF
irf*234 n Abstract: TA17413 Contextual Info: IRF234, IRF235, IRF236, IRF237 h a r r is 8.1 A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 8.1 A and 6.5A, 275V and 250V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power	OCR Scan	irf234 irf235 irf236 irf237 +5ta17413 andrf234 rf236 rf237 irf*234 n	PDF

IRF23 Search Results

IRF23 Datasheets (121)

IRF23 Price and Stock

International Rectifier IRF234

International Rectifier IRF230

Vishay Siliconix IRF230

New Jersey Semiconductor Products Inc IRF230

Microsemi Corporation IRF230

IRF23 Datasheets Context Search

TO-254

CMD8

IRF232

250M

IRF230

irf234 n

IRF232

irf234 n

F233

irf*234 n

MTP20N10

IRF150 To220 package

irf*234 n

irf230

sm 0038

Equivalent IRF 44

ZO 150

IRF230

irf*234 n