IRF01 Search Results

IRF0110

Abstract: IRF0120 IRFD9123 irfu320 THOMSON DISTRIBUTOR 58e d IRFD113 IRFD1Z0 IRFD9014 IRFU121 irfu310
Contextual Info: THOMSON/ DISTRIBUTOR SÄE I • 1ClEbB73 0 0 0 S 8 0 0 International io n Rectifier 7SS ■ HEXFET Power MOSFETs Plastic Insertable Package HEXDIP N-Channel Vqs Drain Source Voltage Volts) Part Number IRFD015 IRFD014 IRFD025 IRFD024 IRFD1Z3 IRFD113 IRFD123

IRF09120

Abstract: 251G FF323 IRFF310 F9122 IRFF130 IRF0120
Contextual Info: - f M % tt ± $ H V ds or € Vg s T a = 2 5 l3 Id Po a Vgs th ) I dss I gs s m tf ï & ï Ds(on) Vd s = ’l ï (V) * /CH * /CH (A) (W) (nA) Vgs (V) C m A) V ds (V) m in max (V) (V) I d (on) C is s g fs Coss C rss $1- B m % V g s =0 (max) Id (mA) ♦ typ

IRF013

Abstract: D33A power MOSFET IRF610 1RF610 irf610 samsung irf610 mosfet IRF61Q irf610 613 33A
Contextual Info: N-CHANNEL POWER MOSFETS IRF610/611/612/613 FEATURES TO-220 • Lower R d s ON • Improved inductive ruggedness • Fast switching times • • • • Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

40w fluorescent lamp inverter circuit

Abstract: irf014 ir2155 40w electronic ballast power supply using IR2153 ir2153 application IR2153 light FLUORESCENT TUBE ballast on IR2153 INVERTER using IR2153 Electronic ballast 40W
Contextual Info: FLUORESCENT BALLAST DESIGN USING PASSIVE P.F.C. AND CREST FACTOR CONTROL by Peter N. Wood International Rectifier Corporation 233 Kansas Street, El Segundo, CA 90245 Abstract-crest factor in Fluorescent lamps is the ratio of peak to rms current. e.g. for a sinusoidal current

Contextual Info: HIP5062 fD H A R R IS S E M I C O N D U C T O R Power Control 1C Single Chip Dual Switching Power Supply May 1992 Features Description • Two Current Mode Control Regulators The HIP5062 is a complete power control IC, incorporating two high power DMOS transistors, CMOS logic and two low level analog control

Contextual Info: 33 HIP5062 Power Control 1C Single Chip Dual Switching Power Supply Ap rii 19g4 Features Description • Two Current Mode Control Regulators The HIP5062 is a complete power control IC, incorporating two high power DMOS transistors, CMOS logic and two low level analog control

ir2155 40w electronic ballast

Abstract: ir2153 application power supply using IR2153 electronic ballast with 555 ic irf014 40w fluorescent lamp inverter circuit application IR2153 IR2155 555 timer ic 40w electronic ballast
Contextual Info: APPLICATION NOTE AN998 International Rectifier • 233 Kansas Street El Segundo CA 90245 USA Fluorescent Ballast Design Using Passive P.F.C. and Crest Factor Control by Peter N. Wood I. INTRODUCTION Power quality standards are being imposed worldwide in order to maximize the efficiency of the

40w fluorescent lamp inverter circuit

Abstract: ir2155 40w electronic ballast irf014 INVERTER using IR2153 IR2153 toroid ir2153 application IR2153 electronic ballast with 555 ic Electronic ballast 40W power supply using IR2153
Contextual Info: Fluorescent Ballast Design Using Passive P.F.C. and Crest Factor Control by Peter N. Wood International Rectifier Corporation 233 Kansas Street, El Segundo, CA 90245, USA ABSTRACT-Crest Factor in Fluorescent lamps is the ratio of lpeak to RMS current. e.g. for a sinusoidal

mfe9200

Abstract: F111 IRFD9123 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120 IRF09120 1rfd9120
Contextual Info: - 258 - f M t± £ € ft A t Vd s or i Vd g £ Vg s & Ta=25cC 1! Id Pd * /CH * /CH Id s s Ig s s Vg s min Vg s (V) Vd s (V) th) max (V) Id (itA) % (V) IR p -100 ± 2 0 -1.0 1 ±500 ±20 -250 -100 -2.0 -4.0 -0.25 IRFD9123 IR p -60 ± 2 0 -0.8 1 ±500 ±2 0

IRF 544 N MOSFET

Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Contextual Info: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no

VN5000TNE

Abstract: IRF0123 VMP4 motorola 20n IRF0113 mosfet vn66af VN0106N2 mosfet 2sk* to-92 mosfet 20n 735M
Contextual Info: MOSFET Item Part Number Manufacturer V BR DSS loss Max Po Max ros (on) gFS Min VGS(th) elsa Max Max tr Max tf Max TOper Max Package Style N-Channel Enhancement-Type, (Co nt' d) 5 S01124Bo S01124Bo VNOS10l 2N7000 VN2222l So1117Bo So1117N S01137Bo VN2222lM 15

Contextual Info: ff! HIP5062 H A R R IS S E M I C O N D U C T O R b ef°V ‘ August 1998 File Num ber 3208.2 \\o Ÿ& Power Control 1C Single Chip Dual Switch­ ing Power Supply Features The HIP5062 is a complete power control 1C, incorporating two high power DMOS transistors, CMOS logic and two low

IRF460 in TO220

Abstract: IRF09110 IRF448 of IRF9540 and IRF540 irf460 switching irf460 to247 IRF250 TO-247 IRF244 Application of irf250 IRFD9120 N CHANNEL
Contextual Info: HEXFET Power MOSFETs Products From IR FullPak N-Channel FullPak Fully-isolated HEXFETs from the heatsink/enclosure , then the FullPak is for you. Until now, semiconductors were insulated from grounded heatsinks with insulating w ashers and nylon screws. Improper Installation of

Contextual Info: Sì HIP5062 H A F R F R IS S E M I C O N D U C T O R August 1998 File Number 3208.2 Ÿ& Features Power Control 1C Single Chip Dual Switch­ ing Power Supply Two Current Mode Control Regulators Two 60V, 5A On-chip DMOS Transistors Thermal Protection Over-Voltage Protection

1RF610

Abstract: IRFS10 IRF611 IRF N-Channel Power MOSFETs IRF612 IRF613 IRF610R IRF611R IRF612R IRF613R
Contextual Info: 2 H A R R I S I R I R F 6 1 O F R 6 1 / 6 / 6 1 1 R 1 / 6 1 1 / 6 2 1 R 2 / 6 / 6 1 1 3 3 R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u st 1991 Features Package TO -22D A B TOP VIEW • 2.6A and 3.3A, 150V - 200V • l'DSion) = 1-5H and 2.4i l

thyristor TAG 8506

Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
Contextual Info: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y

diode sg 73A

Abstract: irf010 IRF012 sg 82a SG 73a IRF0120 tr/diode sg 73A
Contextual Info: N-CHANNEL POWER MOSFETS IRFR010/12/14/15 FEATURES • • • • • • • Lower Ros ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

1RFZ40

Abstract: MFE9200 1rfz44 1RFD123 irfz12 IRF145 irfu9220 irfu9222 IRFZ45 IRH450
Contextual Info: - M € tí: f ft * t Vds or Vd g € £ fê Vg s Ta=25^ Id Pd * /CH * /CH IGSS V g s th) IDSS ft % Bg. Ciss Coss Crss ft & *typ (A) Id (A) *typ (S) (*typ) (*typ) (*typ) (max) (max) (max) (pF) (pF) (pF) Id (A) m % Vd s (V) ínA) Vg s (V) 1R F Z 3 5 IR N

irfd113

Abstract: IRFD110R IRFD111R IRFD112R IRFD113R IRFD111
Contextual Info: _Rugged Power MOSFETs File N um ber IRFD110R, IRFD111R, IRFD112R, IRFD113R 2035 Avalanche Energy Rated N-Channel Power MOSFETs 1A and 0.8A, 60V-100V ros on = 0.60 and 0.80 N-CHANNEL ENHANCEMENT MODE o Features: • Single pulse avalanche energy rated

F111

Abstract: IRFD9123 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120 1rfd9120 LM3661TL-1.25
Contextual Info: - 258 - f ft M t± £ € A£ t Vd s Vg s or Vd g i % V 1RFD9120 IRFD9123 IRFD9210 IRFD9213 iRFD9220 IR IR IR IR IR 1RFD9223 IRFF110 IR IR IR IRFF111 IRFF112 IRFF113 IRFF120 IRFF121 IRFF122 IR IR IR IR IR IRFF123 !R IRFF130 IR IR IR IR IR IR IR IR IR IR

IRF8C30

Abstract: 1RF640 1RFBC40 1RF840 IRFD9010 IRFAF50 IRFAF52 IRFAG50 IRFBC32 1RFD110
Contextual Info: - f M ± Vd s or tt € « fi t Vd g h V £ m fë (Ta=25t3) Vg s (V) Id 1GSS Pt> * /CH * /CH (A) (W) (nA) V g s th) 1DSS Vg s (V) (MA) Vd s (V) (V) (V) ft m '14 Ciss Vd s = Vg s Id (mA) Coss Crss Vg s -O (max) *typ V g s ( 0 ) (V) Id (A) *typ (A) 257 (Ta=25°C)

MOSFET irf 939

Abstract: irf610
Contextual Info: HE D I 4ÔS54S2 GaGfl4bb Data Sheet No. PD-9.326H 5 | INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER l l O R l REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IR F6 1 Q IRFS1 1 IRF6 1 2 N-CHANNEL IRFG1 3 200 Volt, 1.5 Ohm HEXFET T0-220AB Plastic Package

IRF8C30

Abstract: 1RFBC40 IRFBC32 IRFD123 IRFD9010 250/IRF8C30 IRFAF50 IRFAF52 IRFAG50
Contextual Info: f M « tt € t h ± fi Vd s or £ Vd g V fë (Ta=25t3) Vg s Id 1GSS Pt> * /CH * /CH (A) (W) (V) V g s th) 1DSS (nA) Vg s (V) (MA) Vd s (V) (V) (V) - m m ft '14 (Ta=25°C) Ciss Vd s = Vg s Id (mA) Coss Crss Vg s -O (max) *typ V g s (V) (0) Id (A) *typ (A)

Contextual Info: M3D2271 D O S i S t D 434 H A S H IP 5062 H a r r is SEM ICONDUCTOR mm I III Power Control 1C Single Chip Dual Switching Power Supply Aprii 1994 Description Features • Two Current Mode Control Regulators The HIP5062 is a complete power control IC, incorporating two high