IRF Z 44 ST Search Results

IRf 334

Contextual Info: PD - 95503 IRF5804PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max (mW) ID -40V 198@VGS = -10V 334@VGS = -4.5V -2.5A -2.0A Description These P-channel HEXFET® Power MOSFETs from

IRFR6215

Abstract: IRFU6215
Contextual Info: PD-95080A IRFR6215PbF IRFU6215PbF P-Channel l 175°C Operating Temperature l Surface Mount IRFR6215 l Straight Lead (IRFU6215) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = -150V

irf440

Contextual Info: IOR IRF Series Devices IRF Series Data Sheet T h e IR F D a ta S h e e t d e s c rib e s 32 d e v ic e s , 28 N -C h a n n e l a n d 4 P -C h a n n e l, a ll c o n ta in e d in th e T O -2 Û 4 A A o r T 0 - 2 0 4 A E p a c k a g e . T h is d a ta s h e e t

D0217

Abstract: IRFP 620 IRF622 application FZJ 111 irf 44 n FZJ 101 transistor irf620 pj62 IRF620 IRF621
Contextual Info: 3GE » • 7^23? 002=1703 1 ■ ' T v3P|- [ S G S -T H O M S O N * 7 # [ * œ Œ ( g r a [ i * § r= IR F 6 2 0 / F I - 6 2 1 /F I IR F 6 2 2 / F I - 6 2 3 /F I Z S G S-thomJoF TYPE N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS V DSS 200 V 200 V ^DS(on

IRF 1640 G

Abstract: IRF 1640 DD-10V
Contextual Info: 4703B/4703BX FIRST-IN FIRST-OUT FIFO BUFFER MEMORY FA IR CH ILD CMOS MACROLOGIC DESCRIPTIO N — The 4703B /4703B X is an expandable fall-through type high-speed First-In First-O ut (F IF O ) B uffe r M em ory optim ized fo r high speed disc or tape c o n tro l­

mosfet p-channel 300v irf

Abstract: P-Channel 200V MOSFET TSOP6 Si3443DVPbF IRF5850 IRF5851 IRF5852 mosfet 23 Tsop-6 PD-95240 p-channel 250V 30A power mosfet IRF 100A 500V
Contextual Info: PD-95240 Si3443DVPbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel -2.5V Rated Lead-Free D A D 1 6 2 5 3 4 VDSS = -20V D G D S RDS on = 0.065Ω Top View Description These P-channel MOSFETs from International Rectifier

pmi SW01

Abstract: pmi sw 01 SW01B SW01F SW01 SW-01 D100PA SW02 SW-01B SW-02
Contextual Info: - 274 S W -0 1 ,S W -0 2 I N, D, [T [T s ,E v -E GND [7 s, U o ,[ T IN , T S P S T JF E T IRf<= Z>J^c uj'N 2 lO °2 JnrC C O N T R O L L O G IC m v* Tj] n-c 3 s3 To] d 3 S W ITC H STATE SW-01 SW-02 L O G IC INy 1 NO TE: ON OFF IN y = IN P U T 1-4 7 ] in3

MOSFET IRF 380

Abstract: MOSFET IRF 1010 NS4263 AN-994 IRFB4610 IRFS4610 IRFSL4610 irf 100v 100A
Contextual Info: PD - 96906C IRFB4610 IRFS4610 IRFSL4610 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt

c40 concrete

Abstract: IEC C13 pinout tv lcd Schematic Power Supply 1C17 AT86RF211 AT86RF211S RF211 C10nF AT86R
Contextual Info: How Atmel Made a High Performance RF Transceiver As Easy to Implement as a Microcontroller! ElectroMagnetic Compatibility EMC Introduction As recently as a few years ago, RF engineers considered it normal (because of the very low-level input signals involved) to "sweat profusely" when making their mixed

PD7811

Abstract: capacitor MKL d78pg11 153 SP-J eprom 2732A nec uPD7811 smh 210
Contextual Info: ¿/PD78PG11 HIGH-END, 8-BIT, SIN G LE -C H IP N M 0 S m ic r o c o m p u t e r W ITH P IG G Y B A C K EPRO M W ML W NEC Electronics Inc. Description Pin Configuration The NEC /UPD78PG11 is a prototyping device used to emulate the masked-ROM //PD7811. The user can

jrf 520

Abstract: irf 44 n schematic diagram UPS 600 Power structure IRF520 irf5205 IRF521 IRF520 application note IRF 520 TRANSISTOR n 522 IRF522
Contextual Info: 3QE P /S T J • 7cjScjg37 QQSTTb? 3 ■ S G S -T H O M S O N ^ D œ iŒ ig T O iO ig i 6^ S-THOMSON TYPE N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS V Dss ^D S on IRF520 IRF520FI IRF521 IRF521FI 100 100 80 80 0.27 Q 0.27 n Id ' 9.2 A 7 A IRF522 IRF522FI

ha11211

Contextual Info: H A 1 1 2 1 1 FM/AM Stereo Receiver System HA11211 l ± X f IF ìs ¿ VfòìgL t 5 iX h ± X t “ y S t t t Ê I C - T ', ifcwj: •} * « t g , mm • m FM 35 O I F T 's ~f o ^ m in s # o î& sé ^ * - r • A l C t , 1 *r <n IC T FM t AM IF 7 V 7” è

D78C10

Abstract: PD78C10 PD78C11 PD78C10CW 78C10 irf 4110 13412 capacitor MKL PD78C14G-36 PD78C11G-36
Contextual Info: N E C ELECTRONICS INC Tfi D Ë J fc>457S2S 0D133ñfl ¿/PD78C10/C11/C14 8-BIT, SIN G LE-CH IP CMOS M ICROCOM PUTERS WITH A /D CO N VER TER NEC NEC Electronics Inc. -— 6427525 N E C S ELECTRO N ICS Description The/7PD78C10, A/PD78C11, and/nPD78C14 single-chip

pj 88 diode

Abstract: pj 59 diode irfu9120 pj 84 diode IRFR9120 irfr 9120 irfu9121 IRFR9121 irff* p-channel hexfet C82 diode
Contextual Info: HE D | MflSSMSS Q0Qfl332 fc» | Data Sheet No. PD-9.520B INTERNATIONAL R E C T I F I E R T-37-25 INTERNATIONAL RECTIFIER I O R REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRFR9120 IRFR9121 IRFUS120 IRFU0121 P -C H A N N E L -100 Volt, 0.60 Ohm HEXFET

74ls590

Abstract: ic ns 4263
Contextual Info: GD54/74LS590 8-BIT BINARY COUNTERS WITH OUTPUT REGISTERS Features Pin C onfiguration • • • • • 8-Bit Counter with Register Parallel Register Outputs Counter has Direct Clear 3-State Outputs Guaranteed Counter Frequency . DC to 2 0 MHz Vcc Qa G

irf 7193 c

Abstract: RS flip flop IC TGS 815 irf 44 ns XC115 94Q3 9403
Contextual Info: 9403 '/ FIRST-IN FIRST-OUT FIFO BUFFER MEMORY F A IR C H IL D TTL MACROLOGIC D E S C R IP T IO N - The 9403 is an expandable fall-through type high-speed First-In First-Out ( F IF O ) Buffer Memory optimized for high speed disc or tape controllers and com m unication buffer applications. It is organized as 16 words by four bits and may be

pd7810hg

Abstract: CT1F 7.37mt PD781OH pd7810 l64k oz99 pd7810h PD7811HG HPC 932
Contextual Info: SEC j M o sm n n u » M O S P D 7 8 1 H . In t e g r a t e d 7 8 1 C ir c u it 1 H 8 fci*y \ • ^PD7811Hiil6b&#39;>y hALU, ROM, RAM, A / D ? > ' < - 9 , T y u - ' f > * 7 i - x * £ ' £ l f ’7 '7 £ JIM * U T S - 6 8li-y h • v ^ o r y f a - n - t , f 4 "*¡4

Contextual Info: SANYO SEMI CONDUCTOR CORP S3E j Ordering num ber: EN3968_ | D • ■ inqnm i 7T i7ü7b n n n c , r, O D D ^im m * TSAJ Monolithic Linear 1C LA4589W No. 3968 I SA \YO i 1.5 V Stereo Headphone Preamplifier and Power Amplifier 7H-OS- Of PINOUT OVERVIEW

Contextual Info: U N IT E D M IC R O E L E C T R O N IC S 3DE 3 • ^ 3 B 5 fl5 5 D D D O ni D ■ T - r ] c? - 3 r? - ô S U M & 2 C 5 5 0 Asynchronous Communication Element with FIFOs • V ;w ; *31 Features: ■ Capable o f running all existing 82C450 software Independent receiver clock input

irf 44 n

Abstract: 1329B IRLIZ34N IRLZ34N
Contextual Info: PD - 9.1329B IRLIZ34N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.035Ω G Description

Equivalent IRF 44

Abstract: ultra low igss pA IRL2505 IRLI2505
Contextual Info: PD - 9.1327A IRLI2505 HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D

4040 FAIRCHILD

Abstract: IRF 1640 irf 250 for rf slimming 4000B 4703B 4703BX
Contextual Info: 4703B/4703BX FIRST-IN FIRST-OUT FIFO BUFFER MEMORY FA IR C H ILD CMOS MACROLOGIC DESCRIPTIO N — The 4703B /4703B X is an expandable fall-through type high-speed First-In First-O ut (F IF O ) B uffer Memory optim ized fo r high speed disc or tape co n tro l­

Equivalent IRF 44

Abstract: IRLIZ34N 1329B IRLZ34N e4019 mosfet irf 150 irliz34
Contextual Info: PD - 9.1329B IRLIZ34N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.035Ω G Description

IRf 80 12 MOSFET

Abstract: IRL2505 IRLI2505 IRF 042 Equivalent IRF 44 EQUIVALENT OF IRL2505
Contextual Info: PD - 9.1327A IRLI2505 HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D