IRF N CHANNEL MOSFET Search Results

IRF 850 mosfet

Abstract: MOSFET IRF 635 MOSFET IRF 630 MOSFET IRF 713 IRF N-Channel Power MOSFETs IRF 740 N IRF 840 MOSFET IRF 450 MOSFET P Channel Power MOSFET IRF irf 540 mosfet
Contextual Info: FUNCTION GUIDE POWER MOSFETs N-CHANNEL MOSFET TO-220 Vos Id 50 60 80 100 120 150 180 200 2 2.5 350 IRF IRF 713 712 IRF IRF IRF 711 710 1.3 1.5 250 400 450 500 550 600 700 800 850 900 IRF IRF IRF IRF IRF SS P SSP 613 612 614 823 822 2N85 2N90 IRF IRF IRF IRF

Contextual Info: IRF840B/IRFS840B 500V N-Channel MOSFET Features • • • • • • TO-220 TO-220F IRF Series IRFS Series 8.0A, 500V, RDS on = 0.8Ω @VGS = 10 V Low gate charge ( typical 41 nC) Low Crss ( typical 35 pF) Fast switching 100% avalanche tested Improved dv/dt capability

Contextual Info: IRF830B/IRFS830B 500V N-Channel MOSFET Features • • • • • • TO-220 TO-220F IRF Series IRFS Series 4.5A, 500V, RDS on = 1.5Ω @VGS = 10 V Low gate charge ( typical 27 nC) Low Crss ( typical 17 pF) Fast switching 100% avalanche tested Improved dv/dt capability

irf840 rf

Abstract: THOMSON DISTRIBUTOR IRF440 TO-247 irf350* to-247 package THOMSON 58E THOMSON DISTRIBUTOR 58e d IRF320 IRF322 irf420 IRF332
Contextual Info: THOnSON/ DISTRIBUTOR SflE 5 • TDEb&TB 0005707 ■ TCSK - Power MOSFETs IRF-Series Power MOSFETs — N-Channel Continued P a cka g e ^pr i » [j M a x im u m R a tin g s bvdss >d s (V) (A) rD S(O N ) O HM S 400 0 .3 0 0.40 0.40 0.50 1.15 1.30 1.35 1.50

irf9630

Abstract: IRF9632 IRF9631
Contextual Info: HARRIS IR F9630, IRF9631 IRF 9632, IRF9633 Avalanche Energy Rated P-Channel Power MOSFETs A ug ust 1991 Package Features TO -2 2 0 A B • -5.5A and -6.5A , -1 5 0 V and -20 0 V TOP VIEW • r0s O N = 0 .8 0 and 1 .2 fl • Single Pulse Avalanche Energy Rated

1RFP250

Abstract: IRF250 TO-247 THOMSON DISTRIBUTOR IRF631 irf630 irf640 IRF250 IRFD210 IRF331 irf220 IRF241
Contextual Info: T H O M SO N/ D I S T R I B U T O R SflE D • =¡021,073 0 0 05 70 b ZIE m TCSK Power MOSFETs IRF-Series Power MOSFETs — N-Channel Continued Package Maximum Ratings b v DSS (V) ■d s (A) rDS(ON) OHMS 150 4 4.50 5 5.5 1.20 8 9 16 18 25 30 200 0.25 0.32

Contextual Info: IRF120, IRF121 IRF122, IRF 123 31 HARRIS N-Channel Enhancem ent-M ode Power Field-Effect Transistors August 1991 Package Features T 0 -2 0 4 A A • 8.0A and 9.2A , 8 0 V - 100V BOTTOM VIEW • rD S on = 0 .2 7 f l and 0 .3 6 0 SOURCE • S O A is P ow er-D issip atio n Limited

IRF9511

Contextual Info: H a r r is IRF9510, IRF9511 IRF 9512 IRF9513 , Avalanche Energy Rated P-Channel Power MOSFETs Ja n u a ry 1 9 9 4 Package F e a tu re s • T O -220A B -2.5A and -3.0A , -8 0 V and -100V TOP VIEW • rDS ON = 1 -2 0 and 1 .6 ÎÎ • Single Pulse Avalanche Energy Rated

F9530

Abstract: 9533E IRF9530
Contextual Info: H a r r is IRF9530, IR F 9531 IRF 9532 IRF9533 , Avalanche Energy Rated P-Channel Power MOSFETs January 1 9 9 4 Package F e a tu re s T 0 -2 2 0 A B TOP VIEW • -10 A and -1 2 A, -8 0 V and -100V • ro S O N “ 0 .3 f i and 0 .4 ÎÏ • Single Pulse Avalanche Energy Rated

irf MOSFET p-CH

Abstract: IRF P CHANNEL MOSFET marking 27A sot-23 IRF5800 IRF5851 IRF5852 IRF n CHANNEL MOSFET marking 25b sot23
Contextual Info: PD-95341 IRF5851PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free G1 1 6 D1 S2 2 5 S1 G2 3 4 D2 VDSS N-Ch P-Ch 20V -20V RDS on 0.090Ω 0.135Ω Description

MOSFET IRF 940

Abstract: irf 940 irf 48v mosfet power MOSFET IRF data DIODE 851 tr/MOSFET IRF 940
Contextual Info: IRF MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. VDSS ID(cont) RDS(on) 0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia. 5.08 (0.200) typ. 1

z44n

Abstract: mosfet z44n specification of mosfet irf IRF MOSFET driver IRF Power MOSFET code marking IRF n CHANNEL MOSFET 1N4148 marking SOT89 MARKING CODE CL sot89 Marking mosfet RL Z44N
Contextual Info: AP436 Synchronous Rectifier MOSFET Driver „ Features „ General Descriptions - VOUT slew-rate minimum 100V/uS @ CL=3000pF - IOUT sink & source =1.2 / 0.9 A - Safety considered. - Reduce power system thermal & increase system efficiency. - Pb-free packages: SOT89-5L, SOP-8L

IRF123

Abstract: IRF120 IRF1 CQ 1565 RT irf121 IRF122 RF123 IRF1Z0
Contextual Info: Standard Power MOSFETs- IRF120, IRF121, IRF122, IRF123 File Number 1565 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-C HANNEL EN HANCEM ENT MODE 7.0A and 8.0A, 60V-100V

P Channel Power MOSFET IRF

Abstract: IRF P CHANNEL MOSFET P-channel power mosfet irf IRF n CHANNEL MOSFET mosfet p channel irf MOSFET IRF 941 IRF P-Channel mosfet mosfet irf p-channel
Contextual Info: PD- 95589 IRL3102SPbF HEXFET Power MOSFET D VDSS = 20V RDS on = 0.013Ω G • Lead-Free www.irf.com S ID = 61A 1 07/20/04 IRL3102SPbF Ω 2 www.irf.com IRL3102SPbF www.irf.com 3 IRL3102SPbF 4 www.irf.com IRL3102SPbF www.irf.com 5 IRL3102SPbF 6 www.irf.com

irf440

Contextual Info: IOR IRF Series Devices IRF Series Data Sheet T h e IR F D a ta S h e e t d e s c rib e s 32 d e v ic e s , 28 N -C h a n n e l a n d 4 P -C h a n n e l, a ll c o n ta in e d in th e T O -2 Û 4 A A o r T 0 - 2 0 4 A E p a c k a g e . T h is d a ta s h e e t

Diode 188

Abstract: APT8016DFN APT7516DFN 7516-D 47Amps
Contextual Info: ADVANCED MIE POWER TECHNOLOGY 1 oaSTiai DÜDOS'IM S32 • I AVP ■ ADVANCED F O M fER _T-3>°h$„ I Techno lo g y O D 2> 0<2 à (fò APT8016DFN 800V 47.0A 0.16 Ï2 APT7516DFN 750V 47.0A 0.16 ¿1 0 3(2 POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFEtS

9n90c

Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Contextual Info: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W

Contextual Info: Data Sheet No. PD60251 IRS2112 -1,-2,S PbF HIGH AND LOW SIDE DRIVER Features • Floating channel designed for bootstrap operation • Fully operational to +600 V • Tolerant to negative transient voltage, dV/dt immune • Gate drive supply range from 10 V to 20 V

P Channel Power MOSFET IRF

Abstract: IRF P CHANNEL MOSFET IRF n CHANNEL MOSFET IRF P CHANNEL MOSFET D-PAK mosfet n channel irf IRF n 30v
Contextual Info: L i t t l e F E T SERIES S O - 8 S T A N D A R D GATE 1 0 V D E V IC E LittleFET D E V IC E S V DSS ( V ) r DS(O N) 1 (A ) D EV IC E 0.030£2 6.3A RF1K49157 SO-8 N 0.060Î2 3.5A RF1K49086 SO-8 NN 30V PACKAGE 0.060Q 3.5A RF1K49221 SO-8 N 0.150Î2 2.5A

MOSFET IRF 630

Contextual Info: vx-b’J=X ll7-MOSFET vx-n SERIES POWER MOSFET n 9+jf$+jkH O U T L I N E D I M E N S I O N S Case : E-pack 1 i : iate 2 4 1 IIraln 3 : Source [Unit : mm] ‘I - 1; -‘J 1 -7 $, &I 11 2 3-, P12, 7-l Q f ‘g ( 7’: $ 1 1 Lead type is available. See P. 12, 7-l

charge pump relay drive circuit

Abstract: IRF P CHANNEL MOSFET pioneer mosfet IRF-520 Mosfet VN2210N3 ICM7555 TN0604N3 TN2524N8 VN2224 VN2224N3
Contextual Info: TN/TP Series Application Note AN–D2 Low-Threshold MOSFETs: Structure, Performance and Applications Since an increasing amount of attention is being focused on system interface from low-level logic, the need for higher current and/or low on-resistance at drive levels of only 3-5 volts has

IRF P CHANNEL MOSFET 200V 20A

Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
Contextual Info: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω

samco-i inverter manual

Abstract: samco-i inverter diagram IRF power mosfets catalog IRF TRANSISTOR SUBSTITUTION SAMCO-vm05 5kw inverter circuit diagram samco-i manual 400W sine wave inverter circuit diagram samco-i inverter 1.5kw 500 kva inverter diagrams
Contextual Info: NEW-CONCEPT TOP-CLASS INVERTERS FEATURING COMPACT DESIGN & LIGHT WEIGHT Actual Size SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/index.html Birth of the new SAMCO-e Series of inverters that offer outstanding operability and multiple functions in a compact body

irf640

Abstract: IRF640 P CHANNEL MOSFET IRF P CHANNEL MOSFET TO-220 P Channel Power MOSFET IRF DI L6 power MOSFET IRF640 fp IRF640FP IRF640 circuit IRF640 morocco IRF n CHANNEL MOSFET
Contextual Info: IRF640 IRF640FP  N - CHANNEL 200V - 0.150Ω - 18A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE IRF640 IRF640FP • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.18 Ω < 0.18 Ω 18 A 18 A TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES