060N/0 Search Results
060N/0 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| TW060N120C |
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N-ch SiC MOSFET, 1200 V, 36 A, 0.078 Ω@18 V, TO-247 | Datasheet | ||
| 10106127-40060N1LF |
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PwrBlade+® Connector, Power Connectors, 2HP+24S+2HP PF, Right Angle, Receptacle. | |||
| 86303060NLF |
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PIN POWER CONTACT 12-845-PM-116-13 | |||
| SN74HC4060N |
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14-Stage Asynchronous Binary Counters And Oscillators 16-PDIP -40 to 85 |
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| LM26LVCISD-060/NOPB |
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1.6V-Capable Temperature Sensor Switch with Factory Programmed Trip Points 6-WSON -40 to 150 |
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060N/0 Datasheets (4)
Jiangsu JieJie Microelectronics Co Ltd
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
JMTC060N06A
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Jiangsu JieJie Microelectronics Co Ltd | 60V, 120A N-channel enhancement mode Power MOSFET in TO-220C package with RDS(on) less than 6 mΩ at VGS = 10V, featuring advanced trench technology for low gate charge and high efficiency. | Original | ||||
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JMTK060N06A
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Jiangsu JieJie Microelectronics Co Ltd | 60V, 120A N-channel enhancement mode power MOSFET in TO-252-4R package with RDS(on) less than 5.9 mΩ at VGS = 10V, featuring advanced trench technology for low gate charge and high efficiency. | Original | ||||
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JMTE060N06A
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Jiangsu JieJie Microelectronics Co Ltd | 60V, 120A N-channel enhancement mode Power MOSFET in TO-263-3L package with RDS(on) less than 6 mΩ at VGS = 10V, featuring advanced trench technology for low gate charge and high efficiency. | Original | ||||
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JMTG060N06A
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Jiangsu JieJie Microelectronics Co Ltd | 60V, 90A N-channel enhancement mode power MOSFET in a PDFN5x6-8L package with RDS(on) less than 4.9 mΩ at VGS = 10V, suitable for load switching, PWM, and power management applications. | Original |
060N/0 Price and Stock
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Diotec Semiconductor AG DI060N06PQTransistor: N-MOSFET; unipolar; 60V; 60A; Idm: 170A; 70W; QFN5x6 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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DI060N06PQ | 1 |
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Get Quote | |||||||
PanJit Semiconductor PSMQC060N06LS1-AU_R2_006A1Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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PSMQC060N06LS1-AU_R2_006A1 | 1 |
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PSMQC060N06LS1-AU_R2_006A1 | 27 Weeks | 3,000 |
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Ingun Prufmittelbau GmbH GKS-112 209 060 N 0807Test probe: ICT/FCT; 5A; Ø: 0.6mm; GKS-112; steel; 0.8N; push-in |
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GKS-112 209 060 N 0807 | 1 |
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Ingun Prufmittelbau GmbH GKS-112 209 060 N 0810Test probe: ICT/FCT; 5A; Ø: 0.6mm; GKS-112; steel; 0.8N; push-in |
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GKS-112 209 060 N 0810 | 1 |
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Infineon Technologies AG IPA060N06NXKSA1Transistor: N-MOSFET; unipolar; 60V; 45A; 33W; TO220FP |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPA060N06NXKSA1 | 1 |
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IPA060N06NXKSA1 | Tube | 8 Weeks | 1,000 |
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IPA060N06NXKSA1 | 26,157 | 1 |
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IPA060N06NXKSA1 | 9 Weeks | 500 |
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IPA060N06NXKSA1 | 11,244 |
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