IR 2110 Search Results

9754

Abstract: ScansU9X22
Contextual Info: TEIEFUN KEN Rundfunk-Röhren F ü r N ru « n H *ic k liin *in d llrfrn m ir d ir fr t lir d r m k t r n Kilhrentypen Verwendung linden. D ie in K n u t» *5, * « 'te ltlK rle n Kilhrentyp en «iml nur noch in lir ir h r in k t r r S t lc k i» h l für i.r t» u l> r « iik tu n * lie lrrlu ir. D ie l'e r t iin n f

ic driver mosfet 8 pin

Abstract: 14 pin ic 555 DRIVER MOSFET IR IGBT DRIVER SCHEMATIC 3 PHASE IR2132 igbt gate driver IR igbt gate driver ic IR2113 APPLICATIONS Mosfet driver IR2130 ir 2112 applications IGBT gate drivers
Contextual Info: International ^ R e c tifie r Pow er Integrated Circuits Control 1C Applications High Voltage Power MOSFET/IGBT Gate Drivers Features Single Drivers Half Bridge Drivers — IR —*• - -it! MOSFET “IQ IH MOSFET y — IR IGBT y —1^ IGBT — 1 1 Three Phase Drivers

TRANSISTOR REPLACEMENT GUIDE

Abstract: ULN2083 array MC1310P sfc*2741 TBA221 741TC uln2046a All in one TRANSISTOR REPLACEMENT GUIDE SFC2741 MC1305P
Contextual Info: Z ir SPRAGUE TRANSISTOR ARRAYS A New Approach to Design Problem Solving Sprague offers nine monolithic active-device arrays which com bine the performance and versatility of discrete devices with th e inherent reliability and matching of integrated circuits.

motorola transistor 7439

Abstract: 741TC TRANSISTOR REPLACEMENT GUIDE sprague transistors MC1304 SN75474 ULN2151D MC1310P 3067 dual transistor motorola transistor array 14 pin dip
Contextual Info: Z ir SPRAGUE TRANSISTOR ARRAYS A New Approach to Design Problem Solving Sprague offers nine monolithic active-device arrays which com bine the performance and versatility of discrete devices with th e inherent reliability and matching of integrated circuits.

660 880 940 led

Abstract: KED541H
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Multi-wavelength LED KED541H Features •Red and IR emitters in a single package •Sharp directivity with a glass lens •Highly reliable hermetic seal •Direct modulation Dimensions (unit: mm)

Contextual Info: INTERNATIONAL RECTIFIER b5E D • 4055452 0[]lfl:L73 ETT M I N R Data Sheet No. PD-6.014 INTERNATIONAL. RECTIFIER IO R IR 2110C HIGH VOLTAGE MOS GATE DRIVER General Description The IR2110C is the die form of the IR2110 refer to D ata S h e et No. PD-6.011B ; a high voltage, high speed

GMF05LC-HS3

Contextual Info: GMF05LC-HS3 Vishay Semiconductors 5-Line ESD-Protection Diode Array in LLP75-6A Features • • • • • • • • • • Ultra compact LLP75-6A package 5-line ESD-protection Low leakage current IR < 0.1 µA e3 Low load capacitance of typ. 43 pF at

ir2110 circuit DIAGRAM

Contextual Info: International IQ R Rectifier DataSheelNo-PD-6011E IR 2 1 1 0 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to + 500 V Tolerant to negative transient voltage dV/dt immune ■ G ate drive supply range from 10 to 20V

Contextual Info: 128K X 18. 64K x 32/36 3.3V I/O, PIPELINED, SCD S Y N C B U R S T SR AM p ilC IR O IS J MT58LC128K18D8, MT58LC64K32D8, MT58LC64K36D8 SYNCBURST SRAM 3.3V Supply, Pipelined, Burst Counter and Single-Cycle Deselect SYNCBURST SRAM FEATURES • • • • •

2122L

Abstract: 2SD1878 2109 2sd1033 2sd1417 m 2120 2SC4547 2SD1273 2SD1275A 2SD1586
Contextual Info: - *t € Manuf. ID □— A * 2 = n s □ □ $ — A h O— A = ÏZ n tV B ÎL s ir ÍL ÎL m NEC tL HITACHI 2SD1830 2SD1878 2SD1913 2SD880 2SC3671 2SD1825 2SD1830 2SD1829 2SC3746 2SD1830 cn 2SD1829 2SD1828 2SD1829 2SD1828 2SC3661 2SC4135 -E ;# = m □— A

Contextual Info: GMF05LC-HSF Vishay Semiconductors 5-Line ESD Protection Diode Array in LLP75-6L FEATURES • Ultra compact LLP75-6L package 6 5 4 • Low package profile < 0.6 mm • 5-line ESD-protection • Low leakage current IR < 0.1 A • Low load capacitance of typ. 43 pF at VR = 0 V

Contextual Info: GMF05LC-HSF Vishay Semiconductors 5-Line ESD Protection Diode Array in LLP75-6L FEATURES • Ultra compact LLP75-6L package 6 5 4 • Low package profile < 0.6 mm • 5-line ESD-protection • Low leakage current IR < 0.1 A • Low load capacitance of typ. 43 pF at VR = 0 V

Contextual Info: GMF05LC-HSF Vishay Semiconductors 5-Line ESD Protection Diode Array in LLP75-6L FEATURES • Ultra compact LLP75-6L package 6 5 4 • Low package profile < 0.6 mm • 5-line ESD-protection • Low leakage current IR < 0.1 A • Low load capacitance of typ. 43 pF at VR = 0 V

Contextual Info: GMF05LC-HSF Vishay Semiconductors 5-Line ESD Protection Diode Array in LLP75-6L FEATURES • Ultra compact LLP75-6L package 6 5 4 • Low package profile < 0.6 mm • 5-line ESD-protection • Low leakage current IR < 0.1 A • Low load capacitance of typ. 43 pF at VR = 0 V

RC723DP

Abstract: SN72748L MC7805G LM340H-05 SG3525 equivalent transistor KT 209 M 78M15HM SN52107L SG711 SG7812CK
Contextual Info: VOLTAGE REGULATORS OPERATIONAL AMPLIFIERS 2 INTERFACE CIRCUITS 3 TRANSISTOR ARRAYS OTHER CIRCUITS APPLICATIONS NOTES 5 d u c t S e le c to r G uide INTER FA C E C IR C U ITS Regulating Pulse Width Modulators 13 13 16 21 24 44 1524/2524/3524 1525/2525/3525

RE26A

Contextual Info: Data Sheet No. PD-6.086A International I O R Rectifier IR 2 1 1 0 E 4 HIGH AND LOW SIDE DRIVER Product Summary Features Floating channel designed for bootstrap VOFFSET 400V max. lo+/- 2A/2A VOUT 1 0 -2 0 V ton/off ty p . 120 & 94 ns Delay Matching 10 ns

E.78996

Abstract: ir e.78996 IRK 160 78996 D171 D172 D173 D174 3 phase plating rectifier
Contextual Info: •I International HRectifier s e r ie s ir k .61, HIGH VOLTAGE DIODES .81, .101 NEW ADD-A-pak Power Modules INTERNATIONAL RECTIFIER Features ■ ■ ■ ■ ■ ■ ■ ■ ■ 4055452 0Qlbb47 «Ì37 ■ INR bSE T> 60A 80A 100A High voltage E lectrically isolated base plate

GMF05LC-HS3

Contextual Info: GMF05LC-HS3 Vishay Semiconductors 5-Line ESD-Protection Diode Array in LLP75-6A Features • • • • • • • • Ultra compact LLP75-6A package 5-line ESD-protection Low leakage current IR < 0.1 µA Low load capacitance of typ. 43 pF at VR = 0 V ESD-immunity acc. IEC 61000-4-2

GMF05LC-HS3

Contextual Info: GMF05LC-HS3 Vishay Semiconductors 5-Line ESD-Protection Diode Array in LLP75-6A Features • • • • • • • • Ultra compact LLP75-6A package 5-line ESD-protection Low leakage current IR < 0.1 µA Low load capacitance of typ. 43 pF at VR = 0 V ESD-immunity acc. IEC 61000-4-2

UA317

Abstract: Fairchild dtl catalog free transistor equivalent book 2sc lm741 MA339PC MA725HM MA7805KM UA759 gi 9640 diod MA4136PC
Contextual Info: $9.9! •— r c m m pq, F A IR C H IL D A S chlum berger C om pany Linear Data Book Linear Division Introduction The Linear Data Book includes the standard linear product line plus our new W inchester Disk Drive circuits and CLASIC standard cells. For ease o f reference linear

Contextual Info: Snap-in, 85 °C Product information NEW 197 PGP-SI Series Power general purpose snap-in 2 000 h/ 85 °C, 25 000 h/ 40 °C and 1.4 x IR applied Temp. range –25 °C to +85 °C Tolerance ±20% CR µF UR(V) capacitors Useful life 160 200 250 400 56 68 82 22 x 25

Contextual Info: ADVANCED INFORMATION ^ ¿ a ir pr [ ¥ U W h w A .1 1 I j l j C Y7 C 67013 C Y7 C 67113 W CY7C67013 CY7C67113 USB Mini-Host Controller 12 Mbps Cypress Sem iconductor Corporation • 3901 North First Street • San José • CA 95134 • 408-943-2600 November 13, 1998

Contextual Info: GMF05LC-HSF Vishay Semiconductors 5-Line ESD-Protection Diode Array in LLP75-6L Features • • • • • • • • • • • Ultra compact LLP75-6L package Low package profile < 0.6 mm 5-line ESD-protection e3 Low leakage current IR < 0.1 µA Low load capacitance of typ. 43 pF at VR = 0 V

81200

Contextual Info: GMF05LC-HSF Vishay Semiconductors 5-Line ESD-Protection Diode Array in LLP75-6L Features • • • • • • • • • • • Ultra compact LLP75-6L package Low package profile < 0.6 mm 5-line ESD-protection e3 Low leakage current IR < 0.1 µA Low load capacitance of typ. 43 pF at VR = 0 V